GB1058773A - Improvements in and relating to unicrystalline oxide material - Google Patents

Improvements in and relating to unicrystalline oxide material

Info

Publication number
GB1058773A
GB1058773A GB10739/63A GB1073963A GB1058773A GB 1058773 A GB1058773 A GB 1058773A GB 10739/63 A GB10739/63 A GB 10739/63A GB 1073963 A GB1073963 A GB 1073963A GB 1058773 A GB1058773 A GB 1058773A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
chloride
aluminium
oxygen
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10739/63A
Inventor
Kenneth Henderson Jack
George William Stephenson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermal Syndicate Ltd
Original Assignee
Thermal Syndicate Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermal Syndicate Ltd filed Critical Thermal Syndicate Ltd
Priority to GB10739/63A priority Critical patent/GB1058773A/en
Priority to CH1313863A priority patent/CH447125A/en
Priority to DE19631444544 priority patent/DE1444544A1/en
Priority to FR963287A priority patent/FR1383316A/en
Publication of GB1058773A publication Critical patent/GB1058773A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Abstract

Unicrystalline metallic or silicon oxide material is produced by feeding a volatile compound of a metal or of silicon as vapour, optionally in a carrier gas stream, into a high temperature oxygen-containing gas stream, and collecting the oxide or oxides formed on the molten surface of a seed-crystal. Typical <PICT:1058773/C1/1> <PICT:1058773/C1/2> starting materials are ferric chloride, aluminium chloride, aluminium bromide, titanium tetrachloride, silicon tetrachloride, tetramethyl silane, chromyl chloride, vanadium tetrachloride and iron pentacarbonyl. Typical products are sapphire, ruby, corundum, rutile, mullite and chromium oxide. In a process for producing rutile (Fig. 1), a stream of dry hydrogen passing through tube 1 picks up TiCl4 from the liquid TiCl4 in chamber 2. The feed stream passes through tube 7 and mixes with oxygen and hydrogen fuel gases entering at 8. The product crystallizes on seed crystal 9. In a process for producing ruby (Fig. 2) aluminium rod 14 is chlorinated by burning chlorine from 12 in hydrogen from 13. Hydrogen carrier gas from 17 sweeps the aluminium chloride into the oxyhydrogen burner 16, the hydrogen and oxygen being fed through 19 and chromium oxide being introduced as chromyl chloride vapour via 20.
GB10739/63A 1963-03-19 1963-03-19 Improvements in and relating to unicrystalline oxide material Expired GB1058773A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB10739/63A GB1058773A (en) 1963-03-19 1963-03-19 Improvements in and relating to unicrystalline oxide material
CH1313863A CH447125A (en) 1963-03-19 1963-10-25 Process for the production of a single crystal metal oxide, silicon oxide or silicate
DE19631444544 DE1444544A1 (en) 1963-03-19 1963-12-28 Process for producing a metal oxide single crystal
FR963287A FR1383316A (en) 1963-03-19 1964-02-11 Manufacturing process of monocrystalline metal oxides such as fine stones

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB10739/63A GB1058773A (en) 1963-03-19 1963-03-19 Improvements in and relating to unicrystalline oxide material

Publications (1)

Publication Number Publication Date
GB1058773A true GB1058773A (en) 1967-02-15

Family

ID=9973402

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10739/63A Expired GB1058773A (en) 1963-03-19 1963-03-19 Improvements in and relating to unicrystalline oxide material

Country Status (3)

Country Link
CH (1) CH447125A (en)
DE (1) DE1444544A1 (en)
GB (1) GB1058773A (en)

Also Published As

Publication number Publication date
DE1444544A1 (en) 1968-10-24
CH447125A (en) 1967-11-30

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