GB1031043A - Improvements in or relating to semi-conductor devices - Google Patents
Improvements in or relating to semi-conductor devicesInfo
- Publication number
- GB1031043A GB1031043A GB685263A GB685263A GB1031043A GB 1031043 A GB1031043 A GB 1031043A GB 685263 A GB685263 A GB 685263A GB 685263 A GB685263 A GB 685263A GB 1031043 A GB1031043 A GB 1031043A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- semi
- conductivity type
- conductivity
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910001651 emery Inorganic materials 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 239000011253 protective coating Substances 0.000 abstract 1
- 238000005488 sandblasting Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH202162A CH414866A (de) | 1962-02-20 | 1962-02-20 | Aus p- und n-Schichten aufgebautes Gleichrichterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1031043A true GB1031043A (en) | 1966-05-25 |
Family
ID=4224045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB685263A Expired GB1031043A (en) | 1962-02-20 | 1963-02-20 | Improvements in or relating to semi-conductor devices |
Country Status (6)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1589529A1 (de) * | 1967-06-19 | 1970-04-09 | Bosch Gmbh Robert | Planartransistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| EP4109495A1 (de) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6603372A (US20100268047A1-20101021-C00004.png) * | 1965-03-25 | 1966-09-26 | ||
| DE7328984U (de) * | 1973-07-06 | 1975-05-15 | Bbc Ag Brown Boveri & Cie | Leistungshalbleiterbauelement |
| CH566643A5 (US20100268047A1-20101021-C00004.png) * | 1973-10-11 | 1975-09-15 | Bbc Brown Boveri & Cie | |
| DE2358937C3 (de) * | 1973-11-27 | 1976-07-15 | Licentia Gmbh | Thyristor fuer hochspannung im kilovoltbereich |
-
0
- BE BE628619D patent/BE628619A/xx unknown
-
1962
- 1962-02-20 CH CH202162A patent/CH414866A/de unknown
-
1963
- 1963-02-18 DE DE19631789155 patent/DE1789155B1/de not_active Ceased
- 1963-02-18 DE DE1963S0083800 patent/DE1439215B2/de active Granted
- 1963-02-18 AT AT123263A patent/AT255569B/de active
- 1963-02-20 FR FR925466A patent/FR1360744A/fr not_active Expired
- 1963-02-20 GB GB685263A patent/GB1031043A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1589529A1 (de) * | 1967-06-19 | 1970-04-09 | Bosch Gmbh Robert | Planartransistor |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| EP4109495A1 (de) * | 2021-06-23 | 2022-12-28 | Infineon Technologies Bipolar GmbH & Co. KG | Verfahren und vorrichtung zur herstellung einer randstruktur eines halbleiterbauelements |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1789155B1 (de) | 1976-03-11 |
| FR1360744A (fr) | 1964-05-15 |
| BE628619A (US20100268047A1-20101021-C00004.png) | |
| DE1439215B2 (de) | 1973-10-18 |
| DE1439215A1 (de) | 1968-10-17 |
| AT255569B (de) | 1967-07-10 |
| CH414866A (de) | 1966-06-15 |
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