GB1020331A - Semiconductors - Google Patents

Semiconductors

Info

Publication number
GB1020331A
GB1020331A GB27245/62A GB2724562A GB1020331A GB 1020331 A GB1020331 A GB 1020331A GB 27245/62 A GB27245/62 A GB 27245/62A GB 2724562 A GB2724562 A GB 2724562A GB 1020331 A GB1020331 A GB 1020331A
Authority
GB
United Kingdom
Prior art keywords
semi
substrate
conductor
silicon
conductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27245/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of GB1020331A publication Critical patent/GB1020331A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10P14/24—
    • H10P14/3411—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Management (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Business, Economics & Management (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB27245/62A 1961-08-01 1962-07-16 Semiconductors Expired GB1020331A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12857261A 1961-08-01 1961-08-01

Publications (1)

Publication Number Publication Date
GB1020331A true GB1020331A (en) 1966-02-16

Family

ID=22435964

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27245/62A Expired GB1020331A (en) 1961-08-01 1962-07-16 Semiconductors

Country Status (5)

Country Link
BE (1) BE620905A (cg-RX-API-DMAC10.html)
CH (1) CH422995A (cg-RX-API-DMAC10.html)
DK (1) DK118515B (cg-RX-API-DMAC10.html)
GB (1) GB1020331A (cg-RX-API-DMAC10.html)
NL (1) NL281600A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
CH422995A (fr) 1966-10-31
BE620905A (cg-RX-API-DMAC10.html)
NL281600A (cg-RX-API-DMAC10.html)
DK118515B (da) 1970-08-31

Similar Documents

Publication Publication Date Title
US2898248A (en) Method of fabricating germanium bodies
GB1399163A (en) Methods of manufacturing semiconductor devices
GB991370A (en) Semi-conductor material and method of manufacture
US2874076A (en) Semiconductor translating devices
GB949799A (en) Process for the production of crystalline semi-conductor material
GB823317A (en) Improvements in or relating to methods of making semiconductor bodies
GB1134656A (en) Insulated-gate field effect triode
US3158504A (en) Method of alloying an ohmic contact to a semiconductor
GB1178765A (en) Improvements in or relating to the Processing of Semiconductor Bodies
US3665594A (en) Method of joining a body of semiconductor material to a contact or support member
US3178313A (en) Epitaxial growth of binary semiconductors
GB1020331A (en) Semiconductors
US3220380A (en) Deposition chamber including heater element enveloped by a quartz workholder
Seidensticker Kinetic effects in temperature gradient zone melting
US3043726A (en) Method of producing semi-conductor electrode systems
US3172792A (en) Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material
JPS637624A (ja) ３−ｖ族化合物半導体材料中への導電形付与物質の拡散方法
GB1274494A (en) A method of fabricating semiconductor power devices within high resistivity isolation rings
US2897105A (en) Formation of p-n junctions
GB1075555A (en) Process for the formation of a layer of a semiconductor material on a crystalline base
US3409467A (en) Silicon carbide device
JPS58102561A (ja) 半導体装置
US2850688A (en) Semiconductor circuit elements
JPS59184533A (ja) ３−５族化合物半導体結晶の処理方法
Mayboroda et al. Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow