GB1020097A - Semiconductor switching device and method of manufacture - Google Patents

Semiconductor switching device and method of manufacture

Info

Publication number
GB1020097A
GB1020097A GB48160/63D GB4816063D GB1020097A GB 1020097 A GB1020097 A GB 1020097A GB 48160/63 D GB48160/63 D GB 48160/63D GB 4816063 D GB4816063 D GB 4816063D GB 1020097 A GB1020097 A GB 1020097A
Authority
GB
United Kingdom
Prior art keywords
zone
substrate
layer
thick
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48160/63D
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Publication of GB1020097A publication Critical patent/GB1020097A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thyristors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
GB48160/63D 1962-12-12 1963-12-05 Semiconductor switching device and method of manufacture Expired GB1020097A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US244075A US3312880A (en) 1962-12-12 1962-12-12 Four-layer semiconductor switching device having turn-on and turn-off gain

Publications (1)

Publication Number Publication Date
GB1020097A true GB1020097A (en) 1966-02-16

Family

ID=22921268

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48160/63D Expired GB1020097A (en) 1962-12-12 1963-12-05 Semiconductor switching device and method of manufacture

Country Status (3)

Country Link
US (1) US3312880A (enExample)
BE (1) BE641153A (enExample)
GB (1) GB1020097A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387192A (en) * 1965-05-19 1968-06-04 Irc Inc Four layer planar semiconductor switch and method of making the same
US3480802A (en) * 1966-11-16 1969-11-25 Westinghouse Electric Corp High power semiconductor control element and associated circuitry
US3943549A (en) * 1972-03-15 1976-03-09 Bbc Brown, Boveri & Company, Limited Thyristor
JPS5248986A (en) * 1975-10-17 1977-04-19 Mitsubishi Electric Corp Semiconductor temperature sensitive switch element
JPS584826B2 (ja) * 1976-03-22 1983-01-27 株式会社東芝 ゲ−ト・タ−ンオフ・サイリスタ
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
JPS61191071A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 伝導度変調型半導体装置及びその製造方法
FR2579024B1 (fr) * 1985-03-12 1987-05-15 Silicium Semiconducteurs Ssc Thyristor de protection sans gachette
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion

Also Published As

Publication number Publication date
US3312880A (en) 1967-04-04
BE641153A (enExample) 1964-04-01

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