GB1017054A - Improvements relating to semi-conductor controllable rectifier devices - Google Patents
Improvements relating to semi-conductor controllable rectifier devicesInfo
- Publication number
- GB1017054A GB1017054A GB2983761A GB2983761A GB1017054A GB 1017054 A GB1017054 A GB 1017054A GB 2983761 A GB2983761 A GB 2983761A GB 2983761 A GB2983761 A GB 2983761A GB 1017054 A GB1017054 A GB 1017054A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- region
- type
- conductor
- improvements relating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BE621518D BE621518A (sv) | 1961-08-18 | ||
| GB2983761A GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
| FR907118A FR1331768A (fr) | 1961-08-18 | 1962-08-17 | Dispositif redresseur pouvant être commandé |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2983761A GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1017054A true GB1017054A (en) | 1966-01-12 |
Family
ID=10298001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2983761A Expired GB1017054A (en) | 1961-08-18 | 1961-08-18 | Improvements relating to semi-conductor controllable rectifier devices |
Country Status (2)
| Country | Link |
|---|---|
| BE (1) | BE621518A (sv) |
| GB (1) | GB1017054A (sv) |
-
0
- BE BE621518D patent/BE621518A/xx unknown
-
1961
- 1961-08-18 GB GB2983761A patent/GB1017054A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE621518A (sv) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1153428A (en) | Improvements in Semiconductor Devices. | |
| GB1155578A (en) | Field Effect Transistor | |
| GB1152489A (en) | Improvements in and relating to Semiconductor Devices | |
| GB995773A (en) | Semi-conductor devices | |
| GB1060208A (en) | Avalanche transistor | |
| GB983266A (en) | Semiconductor switching devices | |
| GB949646A (en) | Improvements in or relating to semiconductor devices | |
| GB1109371A (en) | Metal-oxide-semiconductor field effect transistor | |
| GB998388A (en) | Improvements in or relating to semiconductor junction devices | |
| GB1134019A (en) | Improvements in semi-conductor devices | |
| GB896717A (en) | Semiconductor diode | |
| GB1472113A (en) | Semiconductor device circuits | |
| GB1073135A (en) | Semiconductor current limiter | |
| GB1215539A (en) | Hybrid junction semiconductor device and method of making the same | |
| GB1017054A (en) | Improvements relating to semi-conductor controllable rectifier devices | |
| GB1076371A (en) | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction | |
| GB1180758A (en) | Improvements in or relating to Semiconductor Devices | |
| GB1128480A (en) | High voltage semiconductor device with electrical gradient-reducing groove | |
| GB1073560A (en) | Improvements in semiconductor devices | |
| GB1141980A (en) | Negative resistance device | |
| GB1335037A (en) | Field effect transistor | |
| GB826916A (en) | Improvements in and relating to semiconductive signal-translating devices | |
| JPS57128960A (en) | Semiconductor device | |
| GB1073707A (en) | A pnpn semi-conductor component | |
| GB1138799A (en) | Avalanche transistor employing depletion layer contour control |