GB1004588A - Process of manufacturing a semiconductor element - Google Patents

Process of manufacturing a semiconductor element

Info

Publication number
GB1004588A
GB1004588A GB4383661A GB4383661A GB1004588A GB 1004588 A GB1004588 A GB 1004588A GB 4383661 A GB4383661 A GB 4383661A GB 4383661 A GB4383661 A GB 4383661A GB 1004588 A GB1004588 A GB 1004588A
Authority
GB
United Kingdom
Prior art keywords
conductivity type
recrystallized
monocrystal
melt
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4383661A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Publication of GB1004588A publication Critical patent/GB1004588A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

1,004,588. Transistors. COMPAGNIE FRANCAISE THOMSON-HOUSTON. Dec. 7, 1961 [Dec. 7, 1960], No. 43836/61. Heading H1K. A PNIP or NPIN monocrystalline element for use in a transistor, is formed from a monocrystal doped with a donor and acceptor impurity of which the one determining the conductivity type has the lower diffusion coefficient by bringing it into contact with a molten mass of lightly doped semi-conductor of the same conductivity type. After partial recrystallisation further doping material is added so that the subsequently recrystallizing material is of the same conductivity type but of lower resistivity. During crystallization and, if necessary, in a subsequent heating step, the minor impurity diffuses from the original monocrystal to form a zone of opposite conductivity type in the recrystallized part. The crystal pulling technique may be used or the melt formed on the surface of the monocrystal in an inert gas and recrystallized there. Typically a grown P-type germanium monocrystalline wafer containing 10<SP>18</SP> atoms/c.c. of indium and 10<SP>17</SP> atoms/c.c. of antimony is dipped in a melt of gallium doped 5 ohm cm. P germanium and withdrawn until the recrystallized layer is 100 Á thick when more gallium is added to the melt to provide a zone of 0À005 ohm cm. resistivity. During recrystallization which typically takes 30 seconds a 6 Á thick N layer is formed adjacent the base crystal by diffusion of antimony into the recrystallized region. Specification 963,275 is referred to.
GB4383661A 1960-12-07 1961-12-07 Process of manufacturing a semiconductor element Expired GB1004588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR846181A FR1282094A (en) 1960-12-07 1960-12-07 Method of manufacturing a semiconductor element with several junctions and semiconductor element produced according to this method

Publications (1)

Publication Number Publication Date
GB1004588A true GB1004588A (en) 1965-09-15

Family

ID=8744243

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4383661A Expired GB1004588A (en) 1960-12-07 1961-12-07 Process of manufacturing a semiconductor element

Country Status (2)

Country Link
FR (1) FR1282094A (en)
GB (1) GB1004588A (en)

Also Published As

Publication number Publication date
FR1282094A (en) 1962-01-19

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