GB1004589A - Process of manufacturing a semiconductor element - Google Patents
Process of manufacturing a semiconductor elementInfo
- Publication number
- GB1004589A GB1004589A GB4405761A GB4405761A GB1004589A GB 1004589 A GB1004589 A GB 1004589A GB 4405761 A GB4405761 A GB 4405761A GB 4405761 A GB4405761 A GB 4405761A GB 1004589 A GB1004589 A GB 1004589A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- impurity
- melt
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 7
- 239000000155 melt Substances 0.000 abstract 5
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000001953 recrystallisation Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Abstract
1,004,589. Semi-conductor devices. COMPAGNIE FRANCAISE THOMSONHOUSTON. Dec. 8, 1961 [Dec. 8, 1960], No. 44057/61. Heading H1K. A PNIP or NPIN monocrystalline element is made from a monocrystal wafer containing at least one impurity characteristic of one conductivity type by bringing it into contact with a melt containing impurity of said one type in such amount that the material recrystallizing on the wafer is of intrinsic conductivity. When a sufficiently thick intrinsic layer has formed a donor and an acceptor impurity are added to the melt, the impurity of the one type having the lower diffusion coefficient and the impurity amounts being such that subsequently recrystallizing material is of the one type. During recrystallization the opposite type impurity diffuses into the intrinsic layer to form a layer of opposite conductivity type. Typically a PNIP element is formed from a grown monocrystalline P-type germanium wafer containing 10<SP>18</SP> atoms/c.c. of indium by dipping in a melt of 5 ohm cm. P-type germanium. After recrystallizing an intrinsic layer therefrom suitable amounts of gallium and antimony are added to the melt and recrystallization continued to form a P zone. During this operation antimony diffuses into the intrinsic layer to form an intermediate N-type layer. In a method of making an NPIN element an N-type silicon base wafer is used and the roles of the donor and acceptor impurities reversed. The melt is in this case formed on the upper surface of the wafer and recrystallized there. Specifications 963,275 and 1,004,588 are referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR846295A FR1282121A (en) | 1960-12-08 | 1960-12-08 | New process for manufacturing a semiconductor element comprising several junctions and a semiconductor element manufactured according to this process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1004589A true GB1004589A (en) | 1965-09-15 |
Family
ID=8744316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4405761A Expired GB1004589A (en) | 1960-12-08 | 1961-12-08 | Process of manufacturing a semiconductor element |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1282121A (en) |
| GB (1) | GB1004589A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355739A (en) * | 2021-05-12 | 2021-09-07 | 晶澳太阳能有限公司 | Monocrystalline silicon and method for producing same |
-
1960
- 1960-12-08 FR FR846295A patent/FR1282121A/en not_active Expired
-
1961
- 1961-12-08 GB GB4405761A patent/GB1004589A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113355739A (en) * | 2021-05-12 | 2021-09-07 | 晶澳太阳能有限公司 | Monocrystalline silicon and method for producing same |
| CN113355739B (en) * | 2021-05-12 | 2023-01-24 | 晶澳太阳能有限公司 | Monocrystalline silicon and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1282121A (en) | 1962-01-19 |
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