GB0522471D0 - Memory element fabricated using atomic layer deposition - Google Patents

Memory element fabricated using atomic layer deposition

Info

Publication number
GB0522471D0
GB0522471D0 GBGB0522471.2A GB0522471A GB0522471D0 GB 0522471 D0 GB0522471 D0 GB 0522471D0 GB 0522471 A GB0522471 A GB 0522471A GB 0522471 D0 GB0522471 D0 GB 0522471D0
Authority
GB
United Kingdom
Prior art keywords
memory element
layer deposition
atomic layer
element fabricated
fabricated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0522471.2A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cavendish Kinetics Ltd
Original Assignee
Cavendish Kinetics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cavendish Kinetics Ltd filed Critical Cavendish Kinetics Ltd
Priority to GBGB0522471.2A priority Critical patent/GB0522471D0/en
Publication of GB0522471D0 publication Critical patent/GB0522471D0/en
Priority to PCT/GB2006/004107 priority patent/WO2007052039A1/en
Priority to JP2008538415A priority patent/JP2009515282A/ja
Priority to US12/441,254 priority patent/US20100038731A1/en
Priority to EP06808404A priority patent/EP1943184A1/en
Priority to CN200680036330XA priority patent/CN101277897B/zh
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H51/00—Electromagnetic relays
    • H01H51/02—Non-polarised relays
    • H01H51/04—Non-polarised relays with single armature; with single set of ganged armatures
    • H01H51/12—Armature is movable between two limit positions of rest and is moved in both directions due to the energisation of one or the other of two electromagnets without the storage of energy to effect the return movement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Semiconductor Memories (AREA)
GBGB0522471.2A 2005-11-03 2005-11-03 Memory element fabricated using atomic layer deposition Ceased GB0522471D0 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GBGB0522471.2A GB0522471D0 (en) 2005-11-03 2005-11-03 Memory element fabricated using atomic layer deposition
PCT/GB2006/004107 WO2007052039A1 (en) 2005-11-03 2006-11-02 Non-volatile memory device
JP2008538415A JP2009515282A (ja) 2005-11-03 2006-11-02 不揮発性メモリデバイス
US12/441,254 US20100038731A1 (en) 2005-11-03 2006-11-02 Non-volatile memory device
EP06808404A EP1943184A1 (en) 2005-11-03 2006-11-02 Non-volatile memory device
CN200680036330XA CN101277897B (zh) 2005-11-03 2006-11-02 制造非易失性微机电存储器单元的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0522471.2A GB0522471D0 (en) 2005-11-03 2005-11-03 Memory element fabricated using atomic layer deposition

Publications (1)

Publication Number Publication Date
GB0522471D0 true GB0522471D0 (en) 2005-12-14

Family

ID=35516294

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0522471.2A Ceased GB0522471D0 (en) 2005-11-03 2005-11-03 Memory element fabricated using atomic layer deposition

Country Status (6)

Country Link
US (1) US20100038731A1 (ja)
EP (1) EP1943184A1 (ja)
JP (1) JP2009515282A (ja)
CN (1) CN101277897B (ja)
GB (1) GB0522471D0 (ja)
WO (1) WO2007052039A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100814390B1 (ko) * 2007-02-15 2008-03-18 삼성전자주식회사 메모리 소자 및 그 제조 방법.
KR100850273B1 (ko) * 2007-03-08 2008-08-04 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
KR100876088B1 (ko) * 2007-05-23 2008-12-26 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
KR100876948B1 (ko) * 2007-05-23 2009-01-09 삼성전자주식회사 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법
JP2008306067A (ja) * 2007-06-08 2008-12-18 Elpida Memory Inc コンタクトプラグの形成方法および半導体装置の製造方法
WO2010054244A2 (en) * 2008-11-07 2010-05-14 Cavendish Kinetics, Inc. Method of using a plurality of smaller mems devices to replace a larger mems device
EP2470938B1 (en) * 2009-08-24 2017-09-27 Cavendish Kinetics Inc. Fabrication of a floating rocker mems device for light modulation
US8569091B2 (en) * 2009-08-27 2013-10-29 International Business Machines Corporation Integrated circuit switches, design structure and methods of fabricating the same
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
US8921144B2 (en) 2010-06-25 2014-12-30 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
US8575037B2 (en) * 2010-12-27 2013-11-05 Infineon Technologies Ag Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same
KR20140020476A (ko) * 2012-08-08 2014-02-19 에스케이하이닉스 주식회사 반도체 메모리 소자 및 이의 제조방법
CN103723674B (zh) * 2012-10-16 2016-02-17 国际商业机器公司 Mems晶体管及其制造方法
CN103745890B (zh) * 2014-01-02 2016-04-20 中国电子科技集团公司第五十五研究所 一种耐冲击硅梁mems复合开关
WO2015160412A2 (en) 2014-01-24 2015-10-22 The Regents Of The University Of Colorado Novel methods of preparing nanodevices
DE102014213390A1 (de) * 2014-07-09 2016-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung einer Vorrichtung mit Mikro- oder Nanostrukturen
US9466452B1 (en) 2015-03-31 2016-10-11 Stmicroelectronics, Inc. Integrated cantilever switch
US11932531B2 (en) * 2022-01-13 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Curved cantilever design to reduce stress in MEMS actuator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6625047B2 (en) * 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
US7057251B2 (en) * 2001-07-20 2006-06-06 Reflectivity, Inc MEMS device made of transition metal-dielectric oxide materials
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
US7553686B2 (en) * 2002-12-17 2009-06-30 The Regents Of The University Of Colorado, A Body Corporate Al2O3 atomic layer deposition to enhance the deposition of hydrophobic or hydrophilic coatings on micro-electromechanical devices
US6653202B1 (en) * 2003-01-17 2003-11-25 Advanced Micro Devices, Inc. Method of shallow trench isolation (STI) formation using amorphous carbon
GB0330010D0 (en) * 2003-12-24 2004-01-28 Cavendish Kinetics Ltd Method for containing a device and a corresponding device
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor

Also Published As

Publication number Publication date
WO2007052039A1 (en) 2007-05-10
EP1943184A1 (en) 2008-07-16
CN101277897A (zh) 2008-10-01
US20100038731A1 (en) 2010-02-18
JP2009515282A (ja) 2009-04-09
CN101277897B (zh) 2011-07-20

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)