GB0427426D0 - Heat-treating methods and systems - Google Patents

Heat-treating methods and systems

Info

Publication number
GB0427426D0
GB0427426D0 GBGB0427426.2A GB0427426A GB0427426D0 GB 0427426 D0 GB0427426 D0 GB 0427426D0 GB 0427426 A GB0427426 A GB 0427426A GB 0427426 D0 GB0427426 D0 GB 0427426D0
Authority
GB
United Kingdom
Prior art keywords
systems
heat
treating methods
treating
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0427426.2A
Other versions
GB2406725A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Technology Canada Inc
Original Assignee
Vortek Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/729,747 external-priority patent/US6594446B2/en
Application filed by Vortek Industries Ltd filed Critical Vortek Industries Ltd
Priority claimed from GB0312620A external-priority patent/GB2387273B/en
Publication of GB0427426D0 publication Critical patent/GB0427426D0/en
Publication of GB2406725A publication Critical patent/GB2406725A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • F27D2099/0026—Electric heating elements or system with a generator of electromagnetic radiations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Furnace Details (AREA)
GB0427426A 2000-12-04 2001-12-04 Heat-treating methods and systems Withdrawn GB2406725A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/729,747 US6594446B2 (en) 2000-12-04 2000-12-04 Heat-treating methods and systems
PCT/CA2001/000776 WO2002047143A1 (en) 2000-12-04 2001-05-30 Heat-treating methods and systems
GB0312620A GB2387273B (en) 2000-12-04 2001-12-04 Heat-treating methods and systems

Publications (2)

Publication Number Publication Date
GB0427426D0 true GB0427426D0 (en) 2005-01-19
GB2406725A GB2406725A (en) 2005-04-06

Family

ID=34276804

Family Applications (5)

Application Number Title Priority Date Filing Date
GB0427423A Expired - Fee Related GB2406711B (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427418A Expired - Fee Related GB2406710B (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427426A Withdrawn GB2406725A (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427424A Withdrawn GB2406712A (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427414A Ceased GB2406709A (en) 2000-12-04 2001-12-04 Heat-treating methods and systems

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB0427423A Expired - Fee Related GB2406711B (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427418A Expired - Fee Related GB2406710B (en) 2000-12-04 2001-12-04 Heat-treating methods and systems

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB0427424A Withdrawn GB2406712A (en) 2000-12-04 2001-12-04 Heat-treating methods and systems
GB0427414A Ceased GB2406709A (en) 2000-12-04 2001-12-04 Heat-treating methods and systems

Country Status (1)

Country Link
GB (5) GB2406711B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4325006A (en) * 1979-08-01 1982-04-13 Jersey Nuclear-Avco Isotopes, Inc. High pulse repetition rate coaxial flashlamp
JPS5870536A (en) * 1981-10-22 1983-04-27 Fujitsu Ltd Laser annealing method
JPS58106836A (en) * 1981-12-18 1983-06-25 Hitachi Ltd Laser annealing device
EP0105230A3 (en) * 1982-09-30 1986-01-15 General Electric Company Triggering and cooling apparatus for laser flashlamps
JPS59211221A (en) * 1983-05-17 1984-11-30 Nippon Denso Co Ltd Heat treatment of ion implanted semiconductor
GB2199693B (en) * 1986-12-02 1990-08-15 Noblelight Ltd Improvements in and relating to flash lamps
JP2605090B2 (en) * 1988-03-28 1997-04-30 東京エレクトロン株式会社 Beam annealing equipment
EP0383230B1 (en) * 1989-02-14 1997-05-28 Seiko Epson Corporation Manufacturing Method of a Semiconductor Device
JP3190653B2 (en) * 1989-05-09 2001-07-23 ソニー株式会社 Annealing method and annealing device
JPH04355911A (en) * 1991-03-27 1992-12-09 Fujitsu Ltd Manufacturing device for semiconductor device
JP3466633B2 (en) * 1991-06-12 2003-11-17 ソニー株式会社 Annealing method for polycrystalline semiconductor layer
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
JPH07245274A (en) * 1994-03-02 1995-09-19 Tokyo Electron Ltd Heat treatment device
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
JP3440579B2 (en) * 1994-10-05 2003-08-25 ソニー株式会社 Heat treatment method
WO1997001863A1 (en) * 1995-06-26 1997-01-16 Seiko Epson Corporation Method of formation of crystalline semiconductor film, method of production of thin-film transistor, method of production of solar cell, and active matrix type liquid crystal device
US5777437A (en) * 1996-07-01 1998-07-07 Lumenx Technologies Inc. Annular chamber flashlamp including a surrounding, packed powder reflective material
KR20010006155A (en) * 1998-02-13 2001-01-26 야스카와 히데아키 Method of producing semiconductor device and heat treating apparatus

Also Published As

Publication number Publication date
GB2406710A (en) 2005-04-06
GB0427414D0 (en) 2005-01-19
GB2406712A (en) 2005-04-06
GB2406725A (en) 2005-04-06
GB2406709A (en) 2005-04-06
GB0427418D0 (en) 2005-01-19
GB0427423D0 (en) 2005-01-19
GB2406711A (en) 2005-04-06
GB2406710B (en) 2005-06-22
GB0427424D0 (en) 2005-01-19
GB2406711B (en) 2005-06-08

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)