GB0415891D0 - Nanoscale fet - Google Patents

Nanoscale fet

Info

Publication number
GB0415891D0
GB0415891D0 GBGB0415891.1A GB0415891A GB0415891D0 GB 0415891 D0 GB0415891 D0 GB 0415891D0 GB 0415891 A GB0415891 A GB 0415891A GB 0415891 D0 GB0415891 D0 GB 0415891D0
Authority
GB
United Kingdom
Prior art keywords
source
channel region
drain
region
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0415891.1A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0415891.1A priority Critical patent/GB0415891D0/en
Publication of GB0415891D0 publication Critical patent/GB0415891D0/en
Priority to EP05759916A priority patent/EP1771888B1/en
Priority to CNB2005800239721A priority patent/CN100521237C/zh
Priority to PCT/IB2005/052313 priority patent/WO2006008703A2/en
Priority to JP2007520958A priority patent/JP2008507127A/ja
Priority to US11/632,738 priority patent/US7838368B2/en
Priority to AT05759916T priority patent/ATE524831T1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y10S977/818—III-P based compounds, e.g. AlxGayIn2P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GBGB0415891.1A 2004-07-16 2004-07-16 Nanoscale fet Ceased GB0415891D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0415891.1A GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet
EP05759916A EP1771888B1 (en) 2004-07-16 2005-07-12 NANOSCALE InP FET
CNB2005800239721A CN100521237C (zh) 2004-07-16 2005-07-12 纳米尺度fet
PCT/IB2005/052313 WO2006008703A2 (en) 2004-07-16 2005-07-12 Nanoscale fet
JP2007520958A JP2008507127A (ja) 2004-07-16 2005-07-12 ナノスケールｆｅｔ
US11/632,738 US7838368B2 (en) 2004-07-16 2005-07-12 Nanoscale fet
AT05759916T ATE524831T1 (de) 2004-07-16 2005-07-12 Nanoskaliger inp fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0415891.1A GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet

Publications (1)

Publication Number Publication Date
GB0415891D0 true GB0415891D0 (en) 2004-08-18

Family

ID=32893646

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0415891.1A Ceased GB0415891D0 (en) 2004-07-16 2004-07-16 Nanoscale fet

Country Status (7)

Country Link
US (1) US7838368B2 (https=)
EP (1) EP1771888B1 (https=)
JP (1) JP2008507127A (https=)
CN (1) CN100521237C (https=)
AT (1) ATE524831T1 (https=)
GB (1) GB0415891D0 (https=)
WO (1) WO2006008703A2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US8890115B2 (en) * 2009-01-06 2014-11-18 Brookhaven Science Associates, Llc Stable and metastable nanowires displaying locally controllable properties
US8389387B2 (en) * 2009-01-06 2013-03-05 Brookhaven Science Associates, Llc Segmented nanowires displaying locally controllable properties
WO2013095647A1 (en) * 2011-12-23 2013-06-27 Intel Corporation Nanowire structures having wrap-around contacts
EP2741337B1 (en) * 2012-12-07 2018-04-11 IMEC vzw Semiconductor heterostructure field effect transistor and method for making thereof
WO2014179340A2 (en) * 2013-04-29 2014-11-06 The University Of North Carolina At Chapel Hill Methods and systems for chemically encoding high-resolution shapes in silicon nanowires
US9741811B2 (en) 2014-12-15 2017-08-22 Samsung Electronics Co., Ltd. Integrated circuit devices including source/drain extension regions and methods of forming the same
CN105990413B (zh) * 2015-02-06 2020-11-17 联华电子股份有限公司 具有纳米线结构的半导体结构与制造方法
CN105789442B (zh) * 2016-05-23 2018-12-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法及相应装置
US11004985B2 (en) 2016-05-30 2021-05-11 Samsung Electronics Co., Ltd. Semiconductor device having multi-thickness nanowire
CN119545838B (zh) * 2024-11-26 2025-09-16 北京智芯微电子科技有限公司 环栅场效应晶体管及其制备方法、芯片和电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
DE10134866B4 (de) * 2000-07-18 2005-08-11 Lg Electronics Inc. Verfahren zum horizontalen Wachsenlassen von Kohlenstoff-Nanoröhren und Feldeffekttransistor, der die durch das Verfahren gewachsenen Kohlenstoff-Nanoröhren verwendet
GB2382718B (en) 2000-07-18 2004-03-24 Lg Electronics Inc Field effect transistor using horizontally grown carbon nanotubes
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
EP1502302A1 (en) 2002-03-28 2005-02-02 Koninklijke Philips Electronics N.V. Nanowire and electronic device
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
KR101089123B1 (ko) * 2002-11-05 2011-12-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 무기 반도체 물질의 나노구조물, 전자 디바이스, 화합물 반도체 물질의 나노구조물 제조 방법, 및 전자 디바이스 제조 방법
US7180107B2 (en) * 2004-05-25 2007-02-20 International Business Machines Corporation Method of fabricating a tunneling nanotube field effect transistor

Also Published As

Publication number Publication date
US7838368B2 (en) 2010-11-23
EP1771888B1 (en) 2011-09-14
CN1985378A (zh) 2007-06-20
US20070262397A1 (en) 2007-11-15
EP1771888A2 (en) 2007-04-11
JP2008507127A (ja) 2008-03-06
CN100521237C (zh) 2009-07-29
WO2006008703A3 (en) 2006-06-22
ATE524831T1 (de) 2011-09-15
WO2006008703A2 (en) 2006-01-26

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)