GB0306752D0 - Device and method for etching a substrate by means of an inductively coupled plasma - Google Patents

Device and method for etching a substrate by means of an inductively coupled plasma

Info

Publication number
GB0306752D0
GB0306752D0 GBGB0306752.7A GB0306752A GB0306752D0 GB 0306752 D0 GB0306752 D0 GB 0306752D0 GB 0306752 A GB0306752 A GB 0306752A GB 0306752 D0 GB0306752 D0 GB 0306752D0
Authority
GB
United Kingdom
Prior art keywords
etching
substrate
inductively coupled
coupled plasma
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB0306752.7A
Other versions
GB2385709A (en
GB2385709B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2000151831 external-priority patent/DE10051831A1/en
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority claimed from GB0120574A external-priority patent/GB2368714B/en
Publication of GB0306752D0 publication Critical patent/GB0306752D0/en
Publication of GB2385709A publication Critical patent/GB2385709A/en
Application granted granted Critical
Publication of GB2385709B publication Critical patent/GB2385709B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
GB0306752A 2000-10-19 2001-08-23 Device and method for etching a substrate by means of an inductively coupled plasma Expired - Fee Related GB2385709B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2000151831 DE10051831A1 (en) 1999-07-20 2000-10-19 Inductively-coupled plasma-etching equipment for silicon substrates includes two stacked coils producing field between substrate and ICP source
GB0120574A GB2368714B (en) 2000-10-19 2001-08-23 Device and method for etching a substrate by means of an inductively coupled plasma

Publications (3)

Publication Number Publication Date
GB0306752D0 true GB0306752D0 (en) 2003-04-30
GB2385709A GB2385709A (en) 2003-08-27
GB2385709B GB2385709B (en) 2004-06-23

Family

ID=27623821

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0306752A Expired - Fee Related GB2385709B (en) 2000-10-19 2001-08-23 Device and method for etching a substrate by means of an inductively coupled plasma

Country Status (1)

Country Link
GB (1) GB2385709B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113133175A (en) * 2019-12-31 2021-07-16 中微半导体设备(上海)股份有限公司 Plasma inductance coil structure, plasma processing equipment and processing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6085688A (en) * 1998-03-27 2000-07-11 Applied Materials, Inc. Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor
KR100311234B1 (en) * 1999-01-18 2001-11-02 학교법인 인하학원 Enhanced inductively coupled plasma reactor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113133175A (en) * 2019-12-31 2021-07-16 中微半导体设备(上海)股份有限公司 Plasma inductance coil structure, plasma processing equipment and processing method
CN113133175B (en) * 2019-12-31 2024-02-09 中微半导体设备(上海)股份有限公司 Plasma inductance coil structure, plasma processing equipment and processing method

Also Published As

Publication number Publication date
GB2385709A (en) 2003-08-27
GB2385709B (en) 2004-06-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180823