GB2364434B - Apparatus for anisotropic plasma etching - Google Patents
Apparatus for anisotropic plasma etchingInfo
- Publication number
- GB2364434B GB2364434B GB0111847A GB0111847A GB2364434B GB 2364434 B GB2364434 B GB 2364434B GB 0111847 A GB0111847 A GB 0111847A GB 0111847 A GB0111847 A GB 0111847A GB 2364434 B GB2364434 B GB 2364434B
- Authority
- GB
- United Kingdom
- Prior art keywords
- plasma etching
- anisotropic plasma
- anisotropic
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000123946 DE10023946A1 (en) | 2000-05-16 | 2000-05-16 | Device for anisotropically etching a substrate has an aperture arranged between the plasma source and the substrate with openings arranged in such a way that the ions from the plasma vertically hit the surface of the substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0111847D0 GB0111847D0 (en) | 2001-07-04 |
GB2364434A GB2364434A (en) | 2002-01-23 |
GB2364434B true GB2364434B (en) | 2003-05-14 |
Family
ID=7642245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0111847A Expired - Fee Related GB2364434B (en) | 2000-05-16 | 2001-05-15 | Apparatus for anisotropic plasma etching |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE10023946A1 (en) |
GB (1) | GB2364434B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2044608B1 (en) | 2006-07-20 | 2012-05-02 | SPP Process Technology Systems UK Limited | Ion sources |
JP2009545101A (en) | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | Plasma source |
WO2008009889A1 (en) | 2006-07-20 | 2008-01-24 | Aviza Technology Limited | Ion deposition apparatus |
US7485827B2 (en) | 2006-07-21 | 2009-02-03 | Alter S.R.L. | Plasma generator |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4661203A (en) * | 1985-06-28 | 1987-04-28 | Control Data Corporation | Low defect etching of patterns using plasma-stencil mask |
US5445709A (en) * | 1992-11-19 | 1995-08-29 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
GB2327909A (en) * | 1997-08-07 | 1999-02-10 | Bosch Gmbh Robert | Anisotropic plasma etching of a silicon wafer with aperture between plasma source and wafer |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960016218B1 (en) * | 1987-06-05 | 1996-12-07 | 가부시기가이샤 히다찌세이사꾸쇼 | Surface treatment method and apparatus thereof |
US5421888A (en) * | 1992-05-12 | 1995-06-06 | Sony Corporation | Low pressure CVD apparatus comprising gas distribution collimator |
DE19900179C1 (en) * | 1999-01-07 | 2000-02-24 | Bosch Gmbh Robert | Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another |
-
2000
- 2000-05-16 DE DE2000123946 patent/DE10023946A1/en not_active Ceased
-
2001
- 2001-05-15 GB GB0111847A patent/GB2364434B/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4661203A (en) * | 1985-06-28 | 1987-04-28 | Control Data Corporation | Low defect etching of patterns using plasma-stencil mask |
US5518572A (en) * | 1991-06-10 | 1996-05-21 | Kawasaki Steel Corporation | Plasma processing system and method |
US5445709A (en) * | 1992-11-19 | 1995-08-29 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
GB2327909A (en) * | 1997-08-07 | 1999-02-10 | Bosch Gmbh Robert | Anisotropic plasma etching of a silicon wafer with aperture between plasma source and wafer |
Also Published As
Publication number | Publication date |
---|---|
DE10023946A1 (en) | 2001-11-29 |
GB2364434A (en) | 2002-01-23 |
GB0111847D0 (en) | 2001-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150515 |