FR962190A - - Google Patents

Info

Publication number
FR962190A
FR962190A FR962190DA FR962190A FR 962190 A FR962190 A FR 962190A FR 962190D A FR962190D A FR 962190DA FR 962190 A FR962190 A FR 962190A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR962190A publication Critical patent/FR962190A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/101—Application of the selenium or tellurium to the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
FR962190D 1941-07-12 Expired FR962190A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US402103A US2408116A (en) 1941-07-12 1941-07-12 Selenium coated elements and method of making them

Publications (1)

Publication Number Publication Date
FR962190A true FR962190A (de) 1950-06-02

Family

ID=23590537

Family Applications (1)

Application Number Title Priority Date Filing Date
FR962190D Expired FR962190A (de) 1941-07-12

Country Status (6)

Country Link
US (1) US2408116A (de)
BE (1) BE481454A (de)
CH (1) CH283551A (de)
DE (1) DE973445C (de)
FR (1) FR962190A (de)
GB (1) GB569473A (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2522474A (en) * 1942-07-02 1950-09-12 Battelle Memorial Institute Treatment of zinc surfaces
BE476039A (de) * 1943-07-30 1900-01-01
BE634687A (de) * 1947-01-06
DE971697C (de) * 1948-10-01 1959-03-12 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2527232A (en) * 1948-11-04 1950-10-24 Wright G Scroxton Bluing metals
DE926987C (de) * 1952-06-10 1955-04-28 Falkenthal Verfahren zur Herstellung von duennen, zusammenhaengenden, homogenen, hexagonalen Selenschichten auf glatter, lichtdurch-laessiger Unterlage, z. B. auf Glas oder Quarzglas
US2937594A (en) * 1955-05-03 1960-05-24 Harris Intertype Corp Lithographic printing
US2822299A (en) * 1955-11-28 1958-02-04 Philips Corp Method of making a cadmium-telluride semi-conductive device
DE1229192B (de) * 1956-10-11 1966-11-24 Standard Elektrik Lorenz Ag Verfahren zur Herstellung von Selengleichrichtern
DE1207508B (de) * 1957-08-01 1965-12-23 Siemens Ag Halbleiterbauelement mit sperrfreien Kontakt-elektroden und Verfahren zum Herstellen
US3178312A (en) * 1959-01-02 1965-04-13 Santa Barbara Res Ct Solutions and methods for depositing lead selenide
US3130137A (en) * 1959-10-14 1964-04-21 Nippon Electric Co Manufacture of selenium rectifier cell
US2997409A (en) * 1959-11-04 1961-08-22 Santa Barbara Res Ct Method of production of lead selenide photodetector cells
DE1133471B (de) * 1961-08-30 1962-07-19 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern
DE1141028B (de) * 1961-09-05 1962-12-13 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern
DE1185727B (de) * 1962-03-15 1965-01-21 Licentia Gmbh Verfahren zur Herstellung von Selengleichrichtern
US5089349A (en) * 1989-06-05 1992-02-18 Calgon Corporation Compositions and method for applying coatings to metallic surfaces

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT117386B (de) * 1927-12-06 1930-04-25 Sueddeutsche Telefon App Kabel Elektrischer Wechselstromgleichrichter.
AT131780B (de) * 1930-08-07 1933-02-10 Erwin Falkenthal Lichtelektrische Zelle und Verfahren zur Herstellung derselben.
DE922896C (de) * 1938-08-16 1955-01-27 Siemens Ag Verfahren zur Herstellung eines Selengleichrichters

Also Published As

Publication number Publication date
BE481454A (de)
CH283551A (de) 1952-06-15
GB569473A (en) 1945-05-25
DE973445C (de) 1960-02-18
US2408116A (en) 1946-09-24

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