FR872709A - Emploi du sélénium comme conducteur partiel d'électricité dans les redresseurs de courant du type sec - Google Patents

Emploi du sélénium comme conducteur partiel d'électricité dans les redresseurs de courant du type sec

Info

Publication number
FR872709A
FR872709A FR872709DA FR872709A FR 872709 A FR872709 A FR 872709A FR 872709D A FR872709D A FR 872709DA FR 872709 A FR872709 A FR 872709A
Authority
FR
France
Prior art keywords
selenium
electricity
dry type
type current
partial conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hermes Patentverwertungs GmbH
Original Assignee
Hermes Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hermes Patentverwertungs GmbH filed Critical Hermes Patentverwertungs GmbH
Application granted granted Critical
Publication of FR872709A publication Critical patent/FR872709A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Elimination Of Static Electricity (AREA)
  • Thermistors And Varistors (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
FR872709D 1939-07-01 1941-04-16 Emploi du sélénium comme conducteur partiel d'électricité dans les redresseurs de courant du type sec Expired FR872709A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES137678D DE742935C (de) 1939-07-01 1939-07-01 Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
DES8687D DE895339C (de) 1939-07-01 1940-06-16 Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter

Publications (1)

Publication Number Publication Date
FR872709A true FR872709A (fr) 1942-06-17

Family

ID=25994794

Family Applications (1)

Application Number Title Priority Date Filing Date
FR872709D Expired FR872709A (fr) 1939-07-01 1941-04-16 Emploi du sélénium comme conducteur partiel d'électricité dans les redresseurs de courant du type sec

Country Status (6)

Country Link
US (1) US2316905A (fr)
BE (1) BE439047A (fr)
CH (1) CH225868A (fr)
DE (2) DE742935C (fr)
FR (1) FR872709A (fr)
SE (1) SE100881C1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967323C (de) * 1943-08-06 1957-11-07 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern, deren Deckelektrode Thallium in geringer Menge zugesetzt ist

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961365C (de) * 1941-12-13 1957-04-04 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
US2447630A (en) * 1943-11-10 1948-08-24 Westinghouse Electric Corp Method of making selenium rectifiers
DE970124C (de) * 1944-01-17 1958-09-04 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
DE924875C (de) * 1944-06-10 1955-03-10 Siemens Ag Selengleichrichter mit hoher thermischer Belastbarkeit
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
BE463238A (fr) * 1944-11-20
US2450886A (en) * 1944-11-20 1948-10-12 Standard Telephones Cables Ltd Semiconductor
DE971697C (de) * 1948-10-01 1959-03-12 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
NL153851B (nl) * 1949-05-30 Lonza Ag Werkwijze voor de bereiding van methacrylzuur uit alfa-hydroxyisoboterzuur.
DE973817C (de) * 1951-03-05 1960-06-15 Licentia Gmbh Verfahren zur Herstellung eines Trockengleichrichters
NL169311B (nl) * 1951-05-05 Ici Ltd Werkwijze voor het bereiden van een hydroxylgroep bevattend, op de 4'-plaats gesubstitueerd fenylsulfonyl-4-halogeenbenzeen en werkwijze voor het bereiden van etherbindingen houdende polymeren die 4'-fenylsulfonyl-4-fenyleenheden bevatten.
NL178572B (nl) * 1952-06-19 Vaw Ver Aluminium Werke Ag Werkwijze voor het vloeimiddelvrij solderen van aluminium materialen.
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
DE1060053B (de) * 1953-02-10 1959-06-25 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern mit einem mehrschichtigen Halbleiter mit verschiedenem Gehalt an Halogen und elektropositiven Zusaetzen in den einzelnen Schichten
DE1156897B (de) * 1954-03-27 1963-11-07 Siemens Ag Selengleichrichter, bei dem die Selenschicht aus mindestens zwei Teilschichten mit unterschiedlichem Zusatzstoffgehalt aufgebaut ist
NL92960C (fr) * 1955-02-07 1900-01-01
DE1125080B (de) * 1960-05-02 1962-03-08 Licentia Gmbh Verfahren zur Herstellung von Selentrockengleichrichtern

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE423105A (fr) * 1936-08-13 1900-01-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967323C (de) * 1943-08-06 1957-11-07 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern, deren Deckelektrode Thallium in geringer Menge zugesetzt ist

Also Published As

Publication number Publication date
SE100881C1 (fr) 1941-02-18
BE439047A (fr) 1940-09-30
DE742935C (de) 1943-12-15
DE895339C (de) 1953-11-02
CH225868A (de) 1943-02-28
US2316905A (en) 1943-04-20

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