FR75047E - High purity silicon production method - Google Patents

High purity silicon production method

Info

Publication number
FR75047E
FR75047E FR783396A FR783396A FR75047E FR 75047 E FR75047 E FR 75047E FR 783396 A FR783396 A FR 783396A FR 783396 A FR783396 A FR 783396A FR 75047 E FR75047 E FR 75047E
Authority
FR
France
Prior art keywords
production method
high purity
purity silicon
silicon production
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR783396A
Other languages
French (fr)
Inventor
Henley Frank Sterling
Frederick John Raymond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB26446/53A external-priority patent/GB745698A/en
Priority to FR1108543D priority Critical patent/FR1108543A/en
Priority claimed from GB806657A external-priority patent/GB831216A/en
Priority to FR769353A priority patent/FR73946E/en
Priority to FR771605A priority patent/FR74454E/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority to FR783396A priority patent/FR75047E/en
Priority claimed from FR790410A external-priority patent/FR75654E/en
Priority claimed from FR794679A external-priority patent/FR75905E/en
Application granted granted Critical
Publication of FR75047E publication Critical patent/FR75047E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/046—Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
FR783396A 1953-09-25 1959-01-06 High purity silicon production method Expired FR75047E (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1108543D FR1108543A (en) 1953-09-25 1954-09-23 High purity silicon production method
FR769353A FR73946E (en) 1953-09-25 1958-07-02 High purity silicon production method
FR771605A FR74454E (en) 1953-09-25 1958-07-31 High purity silicon production method
FR783396A FR75047E (en) 1953-09-25 1959-01-06 High purity silicon production method

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
GB26446/53A GB745698A (en) 1953-09-25 1953-09-25 Improvements in or relating to methods of producing silicon of high purity
GB806657A GB831216A (en) 1957-03-12 1957-03-12 Manufacture of pure silicon
DEST013568 1958-03-25
GB3078150X 1958-05-14
GB3029135X 1958-05-16
FR783396A FR75047E (en) 1953-09-25 1959-01-06 High purity silicon production method
FR790410A FR75654E (en) 1953-09-25 1959-03-24 High purity silicon production method
FR794679A FR75905E (en) 1953-09-25 1959-05-14 High purity silicon production method

Publications (1)

Publication Number Publication Date
FR75047E true FR75047E (en) 1961-03-24

Family

ID=32719773

Family Applications (1)

Application Number Title Priority Date Filing Date
FR783396A Expired FR75047E (en) 1953-09-25 1959-01-06 High purity silicon production method

Country Status (1)

Country Link
FR (1) FR75047E (en)

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