FR1113385A - Method of forming p-n junctions - Google Patents

Method of forming p-n junctions

Info

Publication number
FR1113385A
FR1113385A FR1113385DA FR1113385A FR 1113385 A FR1113385 A FR 1113385A FR 1113385D A FR1113385D A FR 1113385DA FR 1113385 A FR1113385 A FR 1113385A
Authority
FR
France
Prior art keywords
junctions
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1113385A publication Critical patent/FR1113385A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
FR1113385D 1953-10-13 1954-10-12 Method of forming p-n junctions Expired FR1113385A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US779666XA 1953-10-13 1953-10-13

Publications (1)

Publication Number Publication Date
FR1113385A true FR1113385A (en) 1956-03-28

Family

ID=22141063

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1113385D Expired FR1113385A (en) 1953-10-13 1954-10-12 Method of forming p-n junctions

Country Status (3)

Country Link
BE (1) BE532474A (en)
FR (1) FR1113385A (en)
GB (1) GB779666A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US3029170A (en) * 1955-09-02 1962-04-10 Gen Electric Co Ltd Production of semi-conductor bodies
US3512055A (en) * 1956-08-10 1970-05-12 Philips Corp Semi-conductor devices and method of making

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE560901A (en) * 1956-10-01
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3150017A (en) * 1957-06-29 1964-09-22 Sony Corp Doping a pulled semiconductor crystal with impurities having different diffusion coefficients
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3065115A (en) * 1959-12-29 1962-11-20 Texas Instruments Inc Method for fabricating transistors having desired current-transfer ratios

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US3029170A (en) * 1955-09-02 1962-04-10 Gen Electric Co Ltd Production of semi-conductor bodies
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
US3512055A (en) * 1956-08-10 1970-05-12 Philips Corp Semi-conductor devices and method of making
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same

Also Published As

Publication number Publication date
BE532474A (en)
GB779666A (en) 1957-07-24

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