GB831216A - Manufacture of pure silicon - Google Patents

Manufacture of pure silicon

Info

Publication number
GB831216A
GB831216A GB806657A GB806657A GB831216A GB 831216 A GB831216 A GB 831216A GB 806657 A GB806657 A GB 806657A GB 806657 A GB806657 A GB 806657A GB 831216 A GB831216 A GB 831216A
Authority
GB
United Kingdom
Prior art keywords
trap
temperature
maintained
silane
activated charcoal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB806657A
Inventor
Eric Langley Bush
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE532054D priority Critical patent/BE532054A/xx
Priority to BE561654D priority patent/BE561654A/xx
Priority to NL225733D priority patent/NL225733A/xx
Priority to NL112548D priority patent/NL112548C/xx
Priority to BE565604D priority patent/BE565604A/xx
Priority to FR75903D priority patent/FR75903E/fr
Priority to BE561650D priority patent/BE561650A/xx
Priority to FR1108543D priority patent/FR1108543A/en
Priority to CH1063854A priority patent/CH370751A/en
Priority to FR67266D priority patent/FR67266E/en
Priority to FR70026D priority patent/FR70026E/en
Priority to GB31424/56A priority patent/GB829422A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB806657A priority patent/GB831216A/en
Priority to FR749492A priority patent/FR72742E/en
Priority to FR749491A priority patent/FR72741E/en
Priority to FR72288D priority patent/FR72288E/en
Priority to US716652A priority patent/US2987139A/en
Priority to DEI14512A priority patent/DE1065389B/en
Priority to FR760198A priority patent/FR73392E/en
Priority to CH5687258A priority patent/CH373741A/en
Priority to FR769353A priority patent/FR73946E/en
Priority to FR771605A priority patent/FR74454E/en
Priority to FR783396A priority patent/FR75047E/en
Priority to FR790410A priority patent/FR75654E/en
Priority to FR794679A priority patent/FR75905E/en
Publication of GB831216A publication Critical patent/GB831216A/en
Priority to BE663513D priority patent/BE663513A/nl
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/046—Purification

Abstract

<PICT:0831216/III/1> Silane is purified by passage through two activated charcoal-containing traps in series, one trap being maintained at a temperature of - 68 DEG to - 88 DEG C., so as to remove arsine and/or phosphine, and the other being maintained at a temperature of 0 DEG to 30 DEG C., so as to remove diborane. As shown, a trap 2 is maintained at a temperature of - 78 DEG C. by means of solid carbon dioxide, and a trap 3 is maintained at atmospheric temperature. The traps may be in series in either order. Gas absorbed by the activated charcoal in each trap may be desorbed (a) by maintaining the trap at the temperature maintained in the other trap during absorption, or (b) by passing argon through the activated charcoal of each trap while at a temperature of 200 DEG C. Pure silicon may be produced from the purified silane by the method disclosed in Specification 745,698, e.g. by heating silane at a concentration of 0.3% to a temperature of 500 DEG to 800 DEG C.
GB806657A 1953-09-25 1957-03-12 Manufacture of pure silicon Expired GB831216A (en)

Priority Applications (26)

Application Number Priority Date Filing Date Title
BE561650D BE561650A (en) 1953-09-25
NL225733D NL225733A (en) 1953-09-25
NL112548D NL112548C (en) 1953-09-25
BE565604D BE565604A (en) 1953-09-25
FR75903D FR75903E (en) 1953-09-25
BE532054D BE532054A (en) 1953-09-25
BE561654D BE561654A (en) 1953-09-25
FR1108543D FR1108543A (en) 1953-09-25 1954-09-23 High purity silicon production method
CH1063854A CH370751A (en) 1953-09-25 1954-09-25 Process for the production of a coherent body consisting of a highly pure chemical element for semiconductor technology
FR67266D FR67266E (en) 1953-09-25 1954-09-29 High purity silicon production method
FR70026D FR70026E (en) 1953-09-25 1956-08-14 High purity silicon production method
GB31424/56A GB829422A (en) 1953-09-25 1956-10-16 Method and apparatus for producing semi-conductor materials of high purity
GB806657A GB831216A (en) 1957-03-12 1957-03-12 Manufacture of pure silicon
FR749492A FR72742E (en) 1953-09-25 1957-10-15 High purity silicon production method
FR749491A FR72741E (en) 1953-09-25 1957-10-15 High purity silicon production method
FR72288D FR72288E (en) 1953-09-25 1957-10-15 High purity silicon production method
US716652A US2987139A (en) 1953-09-25 1958-02-21 Manufacture of pure silicon
DEI14512A DE1065389B (en) 1953-09-25 1958-03-06 Process for purifying silicon hydride to produce extremely pure silicon for semiconductor use
FR760198A FR73392E (en) 1953-09-25 1958-03-11 High purity silicon production method
CH5687258A CH373741A (en) 1953-09-25 1958-03-12 Process for purifying silane
FR769353A FR73946E (en) 1953-09-25 1958-07-02 High purity silicon production method
FR771605A FR74454E (en) 1953-09-25 1958-07-31 High purity silicon production method
FR783396A FR75047E (en) 1953-09-25 1959-01-06 High purity silicon production method
FR790410A FR75654E (en) 1953-09-25 1959-03-24 High purity silicon production method
FR794679A FR75905E (en) 1953-09-25 1959-05-14 High purity silicon production method
BE663513D BE663513A (en) 1953-09-25 1965-05-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB806657A GB831216A (en) 1957-03-12 1957-03-12 Manufacture of pure silicon

Publications (1)

Publication Number Publication Date
GB831216A true GB831216A (en) 1960-03-23

Family

ID=9845131

Family Applications (1)

Application Number Title Priority Date Filing Date
GB806657A Expired GB831216A (en) 1953-09-25 1957-03-12 Manufacture of pure silicon

Country Status (1)

Country Link
GB (1) GB831216A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289834B (en) * 1960-08-11 1969-02-27 Haldor Frederik Axel Dipl Ing Process for purifying an inorganic halide compound or a mixture of such halide compounds
US4871524A (en) * 1987-09-03 1989-10-03 Ethyl Corporation Hydrogen purification process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289834B (en) * 1960-08-11 1969-02-27 Haldor Frederik Axel Dipl Ing Process for purifying an inorganic halide compound or a mixture of such halide compounds
US4871524A (en) * 1987-09-03 1989-10-03 Ethyl Corporation Hydrogen purification process

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