BE578236R - High purity silicon production method - Google Patents

High purity silicon production method

Info

Publication number
BE578236R
BE578236R BE578236A BE578236A BE578236R BE 578236 R BE578236 R BE 578236R BE 578236 A BE578236 A BE 578236A BE 578236 A BE578236 A BE 578236A BE 578236 R BE578236 R BE 578236R
Authority
BE
Belgium
Prior art keywords
production method
high purity
purity silicon
silicon production
silicon
Prior art date
Application number
BE578236A
Other languages
French (fr)
Inventor
F J Raymond
Original Assignee
Bell Telephone Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Mfg filed Critical Bell Telephone Mfg
Application granted granted Critical
Publication of BE578236R publication Critical patent/BE578236R/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
BE578236A 1958-05-14 1959-04-29 High purity silicon production method BE578236R (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1540958A GB883800A (en) 1958-05-14 1958-05-14 Improvements in or relating to the production of semi-conductor materials

Publications (1)

Publication Number Publication Date
BE578236R true BE578236R (en) 1959-10-29

Family

ID=10058636

Family Applications (1)

Application Number Title Priority Date Filing Date
BE578236A BE578236R (en) 1958-05-14 1959-04-29 High purity silicon production method

Country Status (2)

Country Link
BE (1) BE578236R (en)
GB (1) GB883800A (en)

Also Published As

Publication number Publication date
GB883800A (en) 1961-12-06

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