FR716615A - Redresseur sec. - Google Patents

Redresseur sec.

Info

Publication number
FR716615A
FR716615A FR716615DA FR716615A FR 716615 A FR716615 A FR 716615A FR 716615D A FR716615D A FR 716615DA FR 716615 A FR716615 A FR 716615A
Authority
FR
France
Prior art keywords
straightener
dry
dry straightener
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR716615A publication Critical patent/FR716615A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/812—Venting
FR716615D 1930-05-15 1931-05-06 Redresseur sec. Expired FR716615A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL378444X 1930-05-15
DEN37878A DE712674C (de) 1930-05-15 1935-03-11 Verfahren zur Herstellung von Elektrodensystemen mit unsymmetrischer Leitfaehigkeit

Publications (1)

Publication Number Publication Date
FR716615A true FR716615A (fr) 1931-12-24

Family

ID=25989175

Family Applications (2)

Application Number Title Priority Date Filing Date
FR716615D Expired FR716615A (fr) 1930-05-15 1931-05-06 Redresseur sec.
FR47181D Expired FR47181E (fr) 1930-05-15 1936-03-06 Redresseur sec

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR47181D Expired FR47181E (fr) 1930-05-15 1936-03-06 Redresseur sec

Country Status (6)

Country Link
US (3) US2002221A (xx)
BE (2) BE379606A (xx)
DE (2) DE681108C (xx)
FR (2) FR716615A (xx)
GB (2) GB378444A (xx)
NL (1) NL32845C (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (de) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Trockengleichrichterplatten
NL77928C (xx) * 1941-06-26
BE478832A (xx) * 1942-07-02 1900-01-01
DE970124C (de) * 1944-01-17 1958-09-04 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
BE458445A (xx) * 1944-03-04
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
BE502229A (xx) * 1950-03-31
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
BE510386A (xx) * 1951-04-05 1900-01-01
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
DE974915C (de) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Selengleichrichtern mit einer Lackschicht zwischen Selen und Deckelektrode zur Verwendung fuer Regelzwecke
DE975284C (de) * 1954-02-19 1961-11-02 Licentia Gmbh Selengleichrichter mit einem auf der Selenschicht oder auf der Traegerelektrode aufgebrachten ringfoermigen Isolierstueck
NL221258A (xx) * 1954-11-29
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
DE1295700B (de) * 1964-03-25 1969-05-22 Licentia Gmbh Selenkleingleichrichter
DE3110153A1 (de) * 1980-03-28 1982-05-13 Berthold H. Dr. 5630 Remscheid Daimler Verfahren und vorrichtung zur speicherung von energie

Also Published As

Publication number Publication date
US2002221A (en) 1935-05-21
BE379606A (xx) 1931-06-30
GB378444A (en) 1932-08-08
US2137428A (en) 1938-11-22
USB469610I5 (xx)
DE681108C (de) 1939-09-14
DE712674C (de) 1941-10-23
NL32845C (xx) 1934-06-15
BE414231A (xx)
GB469610A (en) 1937-07-26
FR47181E (fr) 1937-02-06

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