FR3144697A1 - Process for manufacturing an image sensor - Google Patents

Process for manufacturing an image sensor Download PDF

Info

Publication number
FR3144697A1
FR3144697A1 FR2214569A FR2214569A FR3144697A1 FR 3144697 A1 FR3144697 A1 FR 3144697A1 FR 2214569 A FR2214569 A FR 2214569A FR 2214569 A FR2214569 A FR 2214569A FR 3144697 A1 FR3144697 A1 FR 3144697A1
Authority
FR
France
Prior art keywords
cavities
sensitive
visible light
manufacturing
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR2214569A
Other languages
French (fr)
Inventor
Sciancalepore Corrado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2214569A priority Critical patent/FR3144697A1/en
Publication of FR3144697A1 publication Critical patent/FR3144697A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

L’invention concerne un procédé de fabrication d’un capteur d’image pour la détection de la lumière visible et des rayons infrarouges à ondes courtes, caractérisé en ce qu’il comprend les étapes suivantes : fourniture d’un substrat support (1, 1’) comprenant un premier matériau semiconducteur ;formation, dans le substrat support (1, 1’), de cavités (5) afin de définir des pixels (11, 11’) sensibles à la lumière visible dans le premier matériau semiconducteur entre lesdites cavités (5) ;formation d’une couche protectrice (4) électriquement isolante au moins sur les surfaces latérales de chaque pixel (11, 11’) sensible à la lumière visible ; croissance, dans les cavités (5), d’un second matériau, différent du premier matériau, de sorte à former des pixels (12, 12’) sensibles aux rayons infrarouges à ondes courtes Figure d’abrégé : Figure 4fThe invention relates to a method for manufacturing an image sensor for detecting visible light and short-wave infrared rays, characterized in that it comprises the following steps: providing a support substrate (1, 1') comprising a first semiconductor material; formation, in the support substrate (1, 1'), of cavities (5) in order to define pixels (11, 11') sensitive to visible light in the first semiconductor material between said cavities (5);formation of an electrically insulating protective layer (4) at least on the side surfaces of each pixel (11, 11') sensitive to visible light; growth, in the cavities (5), of a second material, different from the first material, so as to form pixels (12, 12') sensitive to short-wave infrared rays Abstract figure: Figure 4f

FR2214569A 2022-12-28 2022-12-28 Process for manufacturing an image sensor Pending FR3144697A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR2214569A FR3144697A1 (en) 2022-12-28 2022-12-28 Process for manufacturing an image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2214569A FR3144697A1 (en) 2022-12-28 2022-12-28 Process for manufacturing an image sensor
FR2214569 2022-12-28

Publications (1)

Publication Number Publication Date
FR3144697A1 true FR3144697A1 (en) 2024-07-05

Family

ID=86657658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2214569A Pending FR3144697A1 (en) 2022-12-28 2022-12-28 Process for manufacturing an image sensor

Country Status (1)

Country Link
FR (1) FR3144697A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015048304A2 (en) 2013-09-25 2015-04-02 Princeton Infrared Technologies, Inc. LOW NOISE InGaAs PHOTODIODE ARRAY
US20170040362A1 (en) * 2015-08-04 2017-02-09 Artilux Corporation Germanium-silicon light sensing apparatus
US20210391378A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company Limited Image sensor device and methods of forming the same
US20220320173A1 (en) * 2021-03-30 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced cross-talk in color and infrared image sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015048304A2 (en) 2013-09-25 2015-04-02 Princeton Infrared Technologies, Inc. LOW NOISE InGaAs PHOTODIODE ARRAY
US20170040362A1 (en) * 2015-08-04 2017-02-09 Artilux Corporation Germanium-silicon light sensing apparatus
US20210391378A1 (en) * 2020-06-15 2021-12-16 Taiwan Semiconductor Manufacturing Company Limited Image sensor device and methods of forming the same
US20220320173A1 (en) * 2021-03-30 2022-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced cross-talk in color and infrared image sensor

Similar Documents

Publication Publication Date Title
TW583468B (en) Liquid crystal display apparatus serving both as transmission type and reflection type and method of manufacturing the same
CA1319186C (en) Color liquid crystal display device and method of manufacturing thereof
WO2002071023A1 (en) Inspection method, inspection device, and manufacturing method for display panel
US9454033B2 (en) Liquid crystal display device
FR2892531A1 (en) THIN FILM TRANSISTOR, PIXEL STRUCTURE AND METHOD OF REPAIR
TW594179B (en) Liquid-crystal display device
JP4561265B2 (en) Back-illuminated solid-state imaging device and manufacturing method thereof
JP3677977B2 (en) Method for forming a microlens
FR3144697A1 (en) Process for manufacturing an image sensor
CA2457899A1 (en) Colour image sensor on transparent substrate and method for making same
JPH01167729A (en) Liquid crystal display panel
CA2590667A1 (en) Image sensor with globally separate colour zones
JP2004264463A (en) Liquid crystal display panel and method for manufacturing the same
JP2871831B2 (en) Solid-state imaging device
JP2001215483A (en) Liquid crystal display device
JPS6275419A (en) Photoelectric conversion device
JPS60262458A (en) Manufacture of solid-state image pickup device
JPH0961536A (en) Semiconductor radiation detector and its manufacture
JP2004004337A (en) Reflective liquid crystal display
JP2715612B2 (en) Active matrix substrate manufacturing method
WO2021033989A1 (en) Substrate for use in manufacturing display and manufacturing method therefor
KR20170122321A (en) Method for optical inspection of display panel
KR100358195B1 (en) Solid-state image sensing device and method of manufacturing the same
US20100208186A1 (en) Display device and manufacturing mehtod thereof
JPH03211527A (en) Active matrix substrate and liquid crystal display device