FR3131436B1 - Procede de fabrication d’un substrat donneur - Google Patents

Procede de fabrication d’un substrat donneur Download PDF

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Publication number
FR3131436B1
FR3131436B1 FR2114469A FR2114469A FR3131436B1 FR 3131436 B1 FR3131436 B1 FR 3131436B1 FR 2114469 A FR2114469 A FR 2114469A FR 2114469 A FR2114469 A FR 2114469A FR 3131436 B1 FR3131436 B1 FR 3131436B1
Authority
FR
France
Prior art keywords
substrate
donor substrate
producing
handling
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2114469A
Other languages
English (en)
French (fr)
Other versions
FR3131436A1 (fr
Inventor
Sebastien Thibert
Clement Gaumer
Cedric Charles-Alfred
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2114469A priority Critical patent/FR3131436B1/fr
Priority to TW111148517A priority patent/TW202343535A/zh
Priority to JP2024535252A priority patent/JP2025501705A/ja
Priority to KR1020247024615A priority patent/KR20240128923A/ko
Priority to EP22838896.3A priority patent/EP4453996A1/fr
Priority to US18/722,862 priority patent/US20250054745A1/en
Priority to PCT/EP2022/087749 priority patent/WO2023118574A1/fr
Priority to CN202280085703.1A priority patent/CN118476009A/zh
Publication of FR3131436A1 publication Critical patent/FR3131436A1/fr
Application granted granted Critical
Publication of FR3131436B1 publication Critical patent/FR3131436B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
FR2114469A 2021-12-23 2021-12-23 Procede de fabrication d’un substrat donneur Active FR3131436B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2114469A FR3131436B1 (fr) 2021-12-23 2021-12-23 Procede de fabrication d’un substrat donneur
TW111148517A TW202343535A (zh) 2021-12-23 2022-12-16 用於製作供體底材之方法
KR1020247024615A KR20240128923A (ko) 2021-12-23 2022-12-23 도너 기판을 제조하기 위한 방법
EP22838896.3A EP4453996A1 (fr) 2021-12-23 2022-12-23 Procede de fabrication d'un substrat donneur
JP2024535252A JP2025501705A (ja) 2021-12-23 2022-12-23 ドナー基板を製作するための方法
US18/722,862 US20250054745A1 (en) 2021-12-23 2022-12-23 Method for fabricating a donor substrate
PCT/EP2022/087749 WO2023118574A1 (fr) 2021-12-23 2022-12-23 Procede de fabrication d'un substrat donneur
CN202280085703.1A CN118476009A (zh) 2021-12-23 2022-12-23 制造供体基板的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2114469A FR3131436B1 (fr) 2021-12-23 2021-12-23 Procede de fabrication d’un substrat donneur
FR2114469 2021-12-23

Publications (2)

Publication Number Publication Date
FR3131436A1 FR3131436A1 (fr) 2023-06-30
FR3131436B1 true FR3131436B1 (fr) 2025-04-25

Family

ID=81345982

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2114469A Active FR3131436B1 (fr) 2021-12-23 2021-12-23 Procede de fabrication d’un substrat donneur

Country Status (8)

Country Link
US (1) US20250054745A1 (https=)
EP (1) EP4453996A1 (https=)
JP (1) JP2025501705A (https=)
KR (1) KR20240128923A (https=)
CN (1) CN118476009A (https=)
FR (1) FR3131436B1 (https=)
TW (1) TW202343535A (https=)
WO (1) WO2023118574A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3157060A1 (fr) * 2023-12-19 2025-06-20 Soitec Régénération d'un substrat donneur pour la fabrication d'une structure POI

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005229455A (ja) * 2004-02-16 2005-08-25 Shin Etsu Chem Co Ltd 複合圧電基板
FR3079346B1 (fr) * 2018-03-26 2020-05-29 Soitec Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
FR3079345B1 (fr) * 2018-03-26 2020-02-21 Soitec Procede de fabrication d'un substrat pour dispositif radiofrequence

Also Published As

Publication number Publication date
WO2023118574A1 (fr) 2023-06-29
TW202343535A (zh) 2023-11-01
US20250054745A1 (en) 2025-02-13
JP2025501705A (ja) 2025-01-23
CN118476009A (zh) 2024-08-09
KR20240128923A (ko) 2024-08-27
FR3131436A1 (fr) 2023-06-30
EP4453996A1 (fr) 2024-10-30

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