Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/01—Manufacture or treatment
  • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
  • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
  • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10N30/00—Piezoelectric or electrostrictive devices
  • H10N30/80—Constructional details
  • H10N30/85—Piezoelectric or electrostrictive active materials
  • H10N30/853—Ceramic compositions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
  • H10P90/1906—Preparing SOI wafers
  • H10P90/1914—Preparing SOI wafers using bonding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
  • H10P90/19—Preparing inhomogeneous wafers
  • H10P90/1904—Preparing vertically inhomogeneous wafers
  • H10P90/1906—Preparing SOI wafers
  • H10P90/1914—Preparing SOI wafers using bonding
  • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
  • H10W10/10—Isolation regions comprising dielectric materials
  • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
  • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
  • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
  • H03H9/02—Details
  • H03H9/02535—Details of surface acoustic wave devices
  • H03H9/02543—Characteristics of substrate, e.g. cutting angles
  • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Definitions

• TITLE PROCESS FOR MANUFACTURING A DONOR SUBSTRATE
• the invention that is the subject of the present application relates to a process for manufacturing a donor substrate.
• the invention finds its application in particular in the field of the manufacture of multilayer substrates, such as for example piezo-on-insulator (POI) or silicon-on-insulator (SOI) substrates.
• PHI piezo-on-insulator
• SOI silicon-on-insulator
• a PSD pseudo-donor substrate
• a PSD typically comprises at least one manipulation substrate, in particular of a semiconductor material such as silicon or sapphire, and a target substrate, one layer of which is intended to be transferred.
• a PSD is used in particular in the context of manufacturing a multilayer substrate using a SmartCut® type method.
• the implementation of a PSD for layer transfer has the main advantage of overcoming the parasitic mechanical forces that can be induced by a differential thermal expansion between a support substrate and a layer deposited on the support substrate.
• the coefficient of thermal expansion of the donor substrate can be minimized.
• An additional advantage of the implementation of a PSD lies in the manufacturing ergonomics, each donor substrate being able to be reused a number of times for one supplying each production cycle with a new layer to a new support substrate using a process of the SmartCut® type. We then speak of a “refresh” of the PSD.
• FR 18 52573 A1 discloses a first method of manufacturing a donor substrate having good mechanical strength by polymerization of a photopolymerizable adhesive layer. This process makes it possible to avoid having to resort to manufacturing steps under high temperature which can be costly and cause curvatures of the substrates.
• the present invention aims to provide a donor substrate manufacturing process which increases the production quality of donor substrates, and results in the reduction of the incidence of defects, in particular the incidence defects observed on final multilayer substrates.
• the invention relates to a method of manufacturing a donor substrate comprising the steps of A: providing a manipulation substrate, B: providing a target substrate, C: attaching the target substrate on the manipulation substrate, comprising a bonding by means of an adhesive layer, the adhesive layer being a layer of a photo-polymerizable material, in particular a layer of a photo-polymerizable liquid with a thickness of 3 ⁇ m at 8 ⁇ m, and D: rectification, in particular by grinding, of the target substrate attached to the manipulation substrate, to form the donor substrate.
• the method is characterized in that a waiting period of a predetermined duration is observed between step C and step D.
• the implementation of a waiting period of a predetermined duration between steps C and D can make it possible to achieve a significant reduction in the quantity of cracks observed in the multilayer substrates produced from of donor substrates manufactured by the process which is the subject of the invention.
• the waiting period can allow the constituent elements of the non-rectified donor substrate to rest and gain in robustness.
• the stabilizing effect of the adhesive layer of the photo-polymerizable material for the attachment of step C can be amplified.
• the non-rectified donor substrate can be made more resistant to the mechanical stresses undergone during the following rectification, as well as during a subsequent layer transfer step.
• the target substrate is a piezoelectric substrate, in particular a piezoelectric substrate comprising a material chosen from among quartz, lithium tantalate, lithium niobate, aluminum nitride, zinc oxide , gallium orthophosphate, barium titanate, langasite, langanite, gallium nitride, lead titano-zirconate or langatate.
• the PSD obtained by the method can be used for the manufacture of POI substrates. Since piezoelectric substrates are particularly valuable due to their high price and diverse applicability, a reduction in production scrap by the inventive method can be all the more advantageous.
• the handling substrate comprises a material chosen from silicon, sapphire, aluminum nitride, silicon carbide or gallium arsenide.
• the coefficient of thermal expansion of the manipulation substrate can be advantageously adapted to a subsequent use of the PSD for the manufacture of a multilayer substrate.
• the predetermined duration is at least 24 hours, preferably at least 48 hours, and preferably at least 105 hours.
• the predetermined duration is less than 300h, preferably less than 200h, and preferably less than 150h.
• the predetermined duration is determined according to the material of the adhesive layer.
• the waiting time can be adapted to the adhesion and relaxation properties specific to each adhesive layer material. In particular, this can make it possible to precisely adapt the waiting time necessary to obtain a gain in quality of the substrates produced.
• the predetermined duration is chosen, on the basis of a statistical study elaborating a cracking rate observed on multilayer substrates obtained from donor substrates manufactured by this method according to the duration of the waiting period observed , so that said duration corresponds to the duration necessary to obtain a cracking rate of 20% or less, in particular of 10% or less, or even more in particular of 5% or less.
• the statistical study can result from tests comprising at least 500 donor substrates manufactured, for example in the form of platelets or “wafer” according to the Anglo-Saxon terminology.
• the method can be adapted even more precisely to a desired objective of the quality of the donor substrate produced.
• the waiting time is respected under the ambient conditions.
• the cost and bulk of environmental control equipments are avoided and the effect of the invention can be obtained.
• Another object of the invention relates to a method for transferring a layer of a donor substrate onto a support substrate, comprising the steps of A: the supply of a donor substrate obtained by the implementation of an aspect of the method described previously, B: the formation of a zone of weakness in the target substrate so as to delimit the layer of the target substrate to be transferred, C: the supply of a support substrate, in particular comprising a material corresponding to a material of the manipulation substrate, D: the attachment of the donor substrate to the support substrate, and E: the fracture and separation of the donor substrate along the zone of weakness.
• the implementation of this method can make it possible to obtain a multilayer substrate with a reduced incidence of material defects, as elaborated previously: by setting up a waiting period of a predetermined duration, the quality of the donor substrates obtained can be increased. Consequently, the layer of the target substrate transferred onto the support substrate is also of a higher quality.
• the combination of the method of manufacturing a donor substrate with this method of transferring a layer of a donor substrate is particularly advantageous because the fractured donor substrate, that is to say the remainder of the donor substrate remaining after the step E, can be reused.
• the same residual donor substrate can, in a subsequent production cycle, be prepared in order to transfer another layer of the target substrate to another support substrate.
• Figure 1 schematically represents the successive steps of a method for manufacturing a donor substrate according to one embodiment of the invention.
• Figure 2 schematically represents the successive steps of a method for transferring a layer according to one embodiment of the invention.
• Figure 3 shows a graph extracted from the results of tests carried out as part of the optimization of the manufacturing process.
• Figure 1 schematically illustrates the successive steps in the manufacture of the donor substrate 1.
• the method includes a step E1 of supplying a handling substrate 3, also called “handle substrate” according to the Anglo-Saxon designation.
• the handling substrate 3 can comprise a material chosen from silicon (Si), sapphire (Al2O3), aluminum nitride (AIN), silicon carbide (SiC), gallium arsenide (GaAs), quartz (SiCh), or another glass.
• the method comprises a step E2 of supplying a target substrate 5.
• the target substrate 5 is a substrate which is intended to be subsequently transferred at least in part onto a support substrate.
• the target substrate 5 can be a piezoelectric substrate.
• the target substrate 5 can comprise a material chosen from LTO (La2Ti20y), quartz (SiC>2), lithium tantalate (LiTaCh), lithium niobate (LiNbCh), aluminum nitride (AIN ), zinc oxide (ZnO), gallium orthophosphate (GaPC>4), barium titanate (BaTiOs), langasite (La 3 Ga 5 SiOi4), langanite (La3Ga5.5Nbo.5O14), gallium nitride (GaN), lead titano-zirconate (PZT) or langatate (La3Ga5.5Tao.5O14).
• LTO La2Ti20y
• quartz SiC>2
• LiTaCh lithium tantalate
• LiNbCh lithium niobate
• AIN aluminum nitride
• ZnO zinc oxide
• BaTiOs barium titan
• the target substrate 5 can be a substrate comprising a semiconductor material such as silicon (Si), sapphire (Al2O3), aluminum nitride (AIN), silicon carbide (SiC), gallium arsenide (GaAs), quartz (SiO2), or another glass.
• a semiconductor material such as silicon (Si), sapphire (Al2O3), aluminum nitride (AIN), silicon carbide (SiC), gallium arsenide (GaAs), quartz (SiO2), or another glass.
• step E3 the target substrate 5 is attached to the manipulation substrate 3.
• the attachment of step E3 is carried out by bonding, in particular by bonding via an adhesive layer 7
• an adhesive layer of a light-curing material is employed.
• a material can be polymerized when it is irradiated by a luminous flux.
• an adhesive layer 7 with a thickness of 3 ⁇ m to 8 ⁇ m of the product marketed under the reference "NOA 61" by the company NORLAND PRODUCTS then subjected to UV radiation through the exposed surface of the target substrate 5 attached to the manipulation substrate 3.
• the method continues with a step E4 during which the manufacturing process is interrupted for a waiting period of a predetermined duration.
• the waiting time is at least 24 hours, and preferably 105 hours.
• the waiting time is respected under ambient conditions. That is to say, during the wait, the target substrate 5 attached to the manipulation substrate 3 is preserved at an ambient temperature, in particular between 20° C. and 26° C. of temperature, and at an ambient pressure, in particular between and 950 hPa and 1030 hPa pressure.
• rectification is meant a surface treatment aimed at reducing the roughness of the exposed surface 9 of the target substrate 5 attached to the manipulation substrate 3.
• the rectification is preferably carried out by grinding or by chemical mechanical planarization, or CMP according to the English term “Chemical-mechanical polishing”.
• the grinding may include a succession of multiple grinding and/or CMP steps.
• the rectification may comprise one or more dry etching steps, for example reactive ion etching, or RIE according to the English term “Reactive ion etching”.
• This manufacturing process leads to a donor substrate that solves the problem of the invention.
• the use of a manipulation substrate 3 is advantageous for example for manufacturing an SOI or POI substrate, because, unlike conventional methods such as epitaxial growth, it makes it possible to avoid deformations induced by high temperatures during treatments. thermal.
• Bonding by adhesive layer 7 in step E3 ensures satisfactory mechanical cohesion of the two bonded substrates.
• the attachment can be carried out without resorting to bonding under high temperature, for example at more than 200°C.
• step E5 makes it possible to obtain a surface which is sufficiently smooth and of uniform flatness for a subsequent transfer of a layer onto a support substrate, for example by using a process of the SmartCut® type.
• the inventors have discovered that fewer defects are observed when the donor substrates 1 have undergone the waiting period between the attachment step E3 and the rectification step E5.
• the effect is particularly advantageous in comparison with multilayer substrates, for example POI or SOI, obtained with donor substrates 1 manufactured without respecting the waiting time.
• the waiting period allows the constituent elements of the non-rectified donor substrate 1, that is to say of the target substrate 5 attached to the manipulation substrate 3, to gain in robustness, before undergoing the rectification, and in particular before undergoing a subsequent layer transfer step during the manufacture of a multilayer substrate, for example of the SOI or POI type by SmartCut®.
• the non-rectified donor substrate is made more resistant to the mechanical stresses undergone during the rectification step or during a subsequent layer transfer. Consequently, the number of donor substrates 1 manufactured liable to lead to defects, and in particular to give rise to cracking, at the end of the transfer of a layer of the target substrate, is reduced and the general quality of the production increased. .
• a process for transferring a layer of a donor substrate onto a support substrate according to one embodiment of the invention is described with reference to FIG. 2.
• the process described relates to a donor substrate 1 obtained according to the process described in the Figure 1 .
• the method of transferring a layer begins with a step E11 of supplying the donor substrate 1 resulting from step E4 of the manufacturing method according to the embodiment of the invention of Figure 1.
• a zone of weakness 11 is formed in the target substrate 5 of the donor substrate 1 in a step E12.
• Zone 11 is formed so as to delimit a layer 13 of target substrate 5 to be transferred.
• the layer 13 is delimited in the target substrate 5 by the zone of weakness 11 on the one hand, and by the rectified surface 9 on the other hand.
• the embrittlement zone 11 is preferably formed by implantation of ions, for example of hydrogen ions or of a rare gas, such as helium.
• the ion dose, the ion dose distribution, and the ion implantation energy can vary and determine the properties of the embrittlement zone 11 formed.
• the depth of the embrittlement zone 11 in the target substrate 5 determines the thickness of the layer 13 to be transferred.
• a support substrate 15 is provided in a step E13.
• the support substrate 15 can preferably comprise a material chosen from silicon (Si), sapphire (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), gallium arsenide (GaAs), quartz (SiC>2), or another glass.
• the support substrate has a main surface 17.
• the material of the manipulation substrate 3 of the donor substrate 1 has been chosen so as to present a thermal expansion coefficient value equivalent or similar to the thermal expansion coefficient value of the support substrate 15, on which the layer 13 is intended to be transferred.
• a similar coefficient value typically corresponds to a value between +10% and -10% of the reference value.
• the support substrate 15 and the handling substrate 3 are preferably made of the same material.
• step E14 the donor substrate 1 is attached to the support substrate 15.
• the donor substrate 1 is attached by attaching the ground surface 9 along the main surface 17 of the support substrate 15, forming a complex 19.
• the attachment can be made for example by bonding via a dielectric layer deposited on at least one of the two surfaces 9, 17 to be bonded.
• the dielectric layer may for example be a layer of glass deposited by centrifugation on the target substrate 5 according to the spin-on glass (SOG) method.
• SOG spin-on glass
• the attachment can be reinforced by subjecting the surface to be bonded, on which the dielectric layer has not been deposited, to a suitable treatment to subsequently allow hydrophilic molecular bonding with the surface on which the dielectric layer has been deposited.
• the attachment can also be reinforced by thermal densification annealing, for example at a temperature of about 250°C.
• the parasitic mechanical forces induced by a thermal expansion differential between support substrate 15 and target substrate 5 are at least partially overcome by the attachment of target substrate 5 to handling substrate 3, on the side opposite support substrate 15.
• the coefficients of thermal expansion of the substrates 3 and 15 on either side of the target substrate 5 are similar.
• step E15 the complex 19 of the donor substrate 1 comprising the weakened target substrate 5, attached to the support substrate 15, is fractured along the weakened zone 11 and separated into two parts: on the one hand the substrate final multilayers 21, such as a POI or SOI substrate, comprising the support substrate 15 on which the delimited layer 13 of the target substrate 5 has been transferred, and on the other hand the rest of the donor substrate after the fracturing step, designated fractured donor substrate 23.
• the substrate final multilayers 21, such as a POI or SOI substrate comprising the support substrate 15 on which the delimited layer 13 of the target substrate 5 has been transferred
• the fractured donor substrate 23 can be rehabilitated, or refreshed, “refreshed” according to Anglo-Saxon terminology, in order to be resubmitted to step E12 of formation of a zone of weakness 11 .
• steps E12, E13, E14, and E15 can be repeated a number of times based on a single original donor substrate 1 supplied, in order to produce several final multilayer substrates 21, such as POIs or SOIs.
• the number of “refresh” times possible per donor substrate 1 is limited by the thickness of the target substrate 5 of the donor substrate 1, of which a layer 13 is removed at each “refresh” iteration.
• step E11 material defects present in the target substrate 5 of the donor substrate 1 supplied in step E11 remain there, or even become more significant throughout the process described with reference to FIG. 2. These defects are transmitted to step E14 at each cycle on the support substrate 15 by the layer 13 transferred. An increase in general quality of the donor substrate 1 provided in step E11 therefore cascades positively on all the products resulting from the process.
• FIG. 3 graphically reproduces the results of observation of cracks on a sample of multilayer substrates 21, for example POI or SOI, manufactured by the embodiment of the method of the invention described above.
• the sample of FIG. 3 comprises 818 donor substrates 1 which were manufactured by the method of FIG. 1 while observing varied waiting times, ranging up to a duration of 300 h.
• the sample substrates include a handling substrate 3 of silicon (Si), a target substrate 5 of LTO (La2Ti2O 2 ) and an adhesive layer 7 of NOA 61 .
• FIG. 3 shows a graph relating to a sample of final multilayer substrates 21 following step E15 of the method of FIG. 2 in a first production cycle.
• the donor substrate 1, from which the sample of substrates 21 was produced, has therefore not yet been subjected to a “refresh” within the framework of a SmartCut® process.
• Each point on the graph corresponds to a multilayer substrate 21 of the sample for which the state of quality, that is to say the presence or absence of material defects, has been observed and recorded as a function of the waiting time complied with in step E5 of the method for manufacturing the donor substrate 1 of step E11.
• the sample of verified multilayer substrates is classified and quantified into three groups: without material defect (S), presenting an incipient crack (A), and presenting a crack (F).
• a crack initiation is a crack that does not cross the thickness of the substrate.
• T_a S/(S+A+F)
• T_b (S+A)/(S+A+F.
• T_a is represented by the reference 31 and T_b by the reference 33.
• the curves 31 and 33 representing the rates T_a and T_b are obtained by a regression not linear of the statistical results of the observations.
• the predetermined duration of step E4 can be chosen, on the basis of the curves 31 or 33 produced by the statistical study represented by FIG. 3.
• a quality objective can be set, and the duration of the waiting period to be respected can be read on the curve 31 or 33 concerned.
• T_b 97%, which in this case corresponds to a period of 105 h .
• the attachment of the target substrate to the manipulation substrate comprises a bonding step by adhesive layer.
• the duration of the waiting period to the material of the adhesive layer, in particular to the adhesion and relaxation properties specific to the material of the adhesive layer chosen.
• a comparative coefficient can be produced comparing the material of the adhesive layer chosen with the mode of attachment chosen in a reference case. The comparative coefficient can then be used to adapt the duration of the waiting period chosen for the manufacture of the donor substrate More precisely. This makes it possible to precisely adapt the waiting period necessary to obtain a maximum gain in the quality of the multilayer substrates 21 , in particular of POI or SOI, produced.
• the layer transfer method can also be improved and provide more qualitative multilayer substrates.
• a donor substrate according to the invention for example a donor substrate 1 obtained according to the method described with reference to FIG. 1
• the layer transfer method can also be improved and provide more qualitative multilayer substrates.
• commercial SOI and POI substrates can be obtained with higher yield by virtue of the reduction of observed material defects.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Chemical & Material Sciences (AREA)
• Ceramic Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Recrystallisation Techniques (AREA)
• Laminated Bodies (AREA)
• Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
• Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

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• 2021
  • 2021-12-23 FR FR2114469A patent/FR3131436B1/fr active Active
• 2022
  • 2022-12-16 TW TW111148517A patent/TW202343535A/zh unknown
  • 2022-12-23 WO PCT/EP2022/087749 patent/WO2023118574A1/fr not_active Ceased
  • 2022-12-23 EP EP22838896.3A patent/EP4453996A1/fr active Pending
  • 2022-12-23 CN CN202280085703.1A patent/CN118476009A/zh active Pending
  • 2022-12-23 JP JP2024535252A patent/JP2025501705A/ja active Pending
  • 2022-12-23 US US18/722,862 patent/US20250054745A1/en active Pending
  • 2022-12-23 KR KR1020247024615A patent/KR20240128923A/ko active Pending

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