FR3120161B1 - Capteur d'image - Google Patents

Capteur d'image Download PDF

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Publication number
FR3120161B1
FR3120161B1 FR2101644A FR2101644A FR3120161B1 FR 3120161 B1 FR3120161 B1 FR 3120161B1 FR 2101644 A FR2101644 A FR 2101644A FR 2101644 A FR2101644 A FR 2101644A FR 3120161 B1 FR3120161 B1 FR 3120161B1
Authority
FR
France
Prior art keywords
substrate
image sensor
pixel
zone
photoconversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2101644A
Other languages
English (en)
Other versions
FR3120161A1 (fr
Inventor
Celine Mas
Matteo Maria Vignetti
Francois Agut
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
STMicroelectronics Grenoble 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS, STMicroelectronics Grenoble 2 SAS filed Critical STMicroelectronics SA
Priority to FR2101644A priority Critical patent/FR3120161B1/fr
Priority to US17/667,485 priority patent/US11895417B2/en
Publication of FR3120161A1 publication Critical patent/FR3120161A1/fr
Application granted granted Critical
Publication of FR3120161B1 publication Critical patent/FR3120161B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out
    • G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/705—Pixels for depth measurement, e.g. RGBZ
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Capteur d'image La présente description concerne un capteur d'image (3) comprenant : une matrice (300) de pixels (10) disposée dans et sur une région d'un substrat semiconducteur (302) isolée électriquement du reste du substrat (302) par des tranchées d'isolation (304) traversant le substrat (302), chaque pixel (10) comprenant une zone de photoconversion et au moins deux ensembles comprenant chacun une zone mémoire et une grille de transfert reliant la zone mémoire à la zone de photoconversion ; et un circuit configuré pour appliquer, pour chaque pixel (10) et au moins pendant chaque phase d'intégration, une tension de polarisation (Vpixsub) différente de la masse (GND) à une partie du substrat (302) dans et sur laquelle est disposé le pixel. Figure pour l'abrégé : Fig. 3
FR2101644A 2021-02-19 2021-02-19 Capteur d'image Active FR3120161B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR2101644A FR3120161B1 (fr) 2021-02-19 2021-02-19 Capteur d'image
US17/667,485 US11895417B2 (en) 2021-02-19 2022-02-08 Image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2101644A FR3120161B1 (fr) 2021-02-19 2021-02-19 Capteur d'image
FR2101644 2021-02-19

Publications (2)

Publication Number Publication Date
FR3120161A1 FR3120161A1 (fr) 2022-08-26
FR3120161B1 true FR3120161B1 (fr) 2023-11-24

Family

ID=76034715

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2101644A Active FR3120161B1 (fr) 2021-02-19 2021-02-19 Capteur d'image

Country Status (2)

Country Link
US (1) US11895417B2 (fr)
FR (1) FR3120161B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024071088A1 (fr) * 2022-09-27 2024-04-04 ヌヴォトンテクノロジージャパン株式会社 Dispositif d'imagerie, dispositif de mesure de distance et procédé de commande pour dispositif d'imagerie

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009037596B4 (de) * 2009-08-14 2014-07-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Pixelstruktur, System und Verfahren zur optischen Abstandsmessung sowie Steuerschaltung für die Pixelstruktur
JP6507529B2 (ja) * 2014-08-29 2019-05-08 株式会社デンソー 光飛行型測距装置
KR102383101B1 (ko) * 2015-02-25 2022-04-05 삼성전자주식회사 다른 기판 바이어스 전압들을 갖는 이미지 센서
FR3046495B1 (fr) * 2015-12-30 2018-02-16 Stmicroelectronics (Crolles 2) Sas Pixel de detection de temps de vol
WO2021204816A1 (fr) * 2020-04-06 2021-10-14 Analog Devices International Unlimited Company Gestion de puissance optique dans un système laser

Also Published As

Publication number Publication date
FR3120161A1 (fr) 2022-08-26
US11895417B2 (en) 2024-02-06
US20220272291A1 (en) 2022-08-25

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