FR3113768B1 - Procédé de traitement d'un dispositif optoélectronique - Google Patents
Procédé de traitement d'un dispositif optoélectronique Download PDFInfo
- Publication number
- FR3113768B1 FR3113768B1 FR2008792A FR2008792A FR3113768B1 FR 3113768 B1 FR3113768 B1 FR 3113768B1 FR 2008792 A FR2008792 A FR 2008792A FR 2008792 A FR2008792 A FR 2008792A FR 3113768 B1 FR3113768 B1 FR 3113768B1
- Authority
- FR
- France
- Prior art keywords
- optoelectronic device
- processing
- region
- substrate
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 4
- 230000005693 optoelectronics Effects 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Procédé de traitement d'un dispositif optoélectronique La présente description concerne un procédé de traitement d'une région (75) d'un dispositif optoélectronique (Pix) comprenant en outre un substrat (76) adjacent à la région à traiter (75). Le dispositif optoélectronique comprend, dans la région à traiter, des éléments programmables configurés pour être modifiés lorsqu'ils sont exposés à un faisceau laser. Le procédé comprend l'exposition d'au moins l'un des éléments programmables au faisceau laser focalisé au travers du substrat. Figure pour l'abrégé : Fig. 7
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2008792A FR3113768B1 (fr) | 2020-08-28 | 2020-08-28 | Procédé de traitement d'un dispositif optoélectronique |
EP21762717.3A EP4205188A1 (fr) | 2020-08-28 | 2021-08-19 | Procédé de traitement d'un dispositif optoélectronique |
US18/023,337 US20230352403A1 (en) | 2020-08-28 | 2021-08-19 | Method for treating an optoelectronic device |
PCT/EP2021/073092 WO2022043195A1 (fr) | 2020-08-28 | 2021-08-19 | Procédé de traitement d'un dispositif optoélectronique |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2008792A FR3113768B1 (fr) | 2020-08-28 | 2020-08-28 | Procédé de traitement d'un dispositif optoélectronique |
FR2008792 | 2020-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3113768A1 FR3113768A1 (fr) | 2022-03-04 |
FR3113768B1 true FR3113768B1 (fr) | 2022-09-09 |
Family
ID=73038245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR2008792A Active FR3113768B1 (fr) | 2020-08-28 | 2020-08-28 | Procédé de traitement d'un dispositif optoélectronique |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230352403A1 (fr) |
EP (1) | EP4205188A1 (fr) |
FR (1) | FR3113768B1 (fr) |
WO (1) | WO2022043195A1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7479447B2 (en) * | 2005-04-04 | 2009-01-20 | International Business Machines Corporation | Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses |
US8809165B2 (en) * | 2012-08-27 | 2014-08-19 | Infineon Technologies Ag | Method for fusing a laser fuse and method for processing a wafer |
US9917055B2 (en) * | 2015-03-12 | 2018-03-13 | Sii Semiconductor Corporation | Semiconductor device having fuse element |
GB2541970B (en) * | 2015-09-02 | 2020-08-19 | Facebook Tech Llc | Display manufacture |
CN106684098B (zh) * | 2017-01-06 | 2019-09-10 | 深圳市华星光电技术有限公司 | 微发光二极管显示面板及其修复方法 |
FR3068819B1 (fr) * | 2017-07-04 | 2019-11-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'affichage a leds |
-
2020
- 2020-08-28 FR FR2008792A patent/FR3113768B1/fr active Active
-
2021
- 2021-08-19 US US18/023,337 patent/US20230352403A1/en active Pending
- 2021-08-19 WO PCT/EP2021/073092 patent/WO2022043195A1/fr unknown
- 2021-08-19 EP EP21762717.3A patent/EP4205188A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
EP4205188A1 (fr) | 2023-07-05 |
FR3113768A1 (fr) | 2022-03-04 |
US20230352403A1 (en) | 2023-11-02 |
WO2022043195A1 (fr) | 2022-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP4235601A3 (fr) | Systeme optique et son procede de fabrication | |
TW200710980A (en) | Method for manufacturing semiconductor device | |
MA30047B1 (fr) | Procede destine a traiter une lesion articulaire | |
TW200801847A (en) | Immersion lithography fluid control system | |
ATE469724T1 (de) | Laserbearbeitungsverfahren | |
DE502005001790D1 (de) | Verfahren zur bestimmung der fokuslage eines laserstrahls | |
FR3113768B1 (fr) | Procédé de traitement d'un dispositif optoélectronique | |
FR3099294B1 (fr) | Procédé de traitement d’un precurseur de cellule photovoltaïque a hétérojonction | |
MA46148B1 (fr) | Systèmes et procédés de capture d'image dans une capsule de culture de ligne d'assemblage | |
TW201816864A (zh) | 檢查用晶圓及檢查用晶圓的使用方法 | |
EP1871565A1 (fr) | Dispositif de micro-usinage par laser femtoseconde avec conformation dynamique de faisceau | |
MY194179A (en) | Semiconductor substrate processing method | |
FR3094093B1 (fr) | Procédé de prédiction de la vitesse du vent dans le plan du rotor pour une éolienne équipée d’un capteur de télédétection par Laser | |
MA31303B1 (fr) | Système photovoltaïque de concentration et procédé de concentration associé. | |
KR20220100974A (ko) | 실리콘 웨이퍼의 결함 검사 방법 및 실리콘 웨이퍼의 결함 검사 시스템 | |
US11552214B2 (en) | Lift-off method and laser processing apparatus | |
EP3928599B1 (fr) | Procédé d'assemblage de composants mettant en oeuvre un prétraitement des bossages de brasure permettant un assemblage par brasage sans flux et sans résidu | |
FR3114441B1 (fr) | Photodiode de type spad | |
FR3094560B1 (fr) | Prise de contact sur du germanium | |
FR3125764B1 (fr) | Dispositif lumineux et composant de véhicule comprenant un tel dispositif lumineux | |
FR3106668B1 (fr) | Dispositif de traitement d’un faisceau lumineux par l'intermediaire d’un convertisseur multi plan pour le conformer à une forme prédéterminée | |
FR3105878B1 (fr) | Dispositif à composants optoélectroniques tridimensionnels pour découpe au laser et procédé de découpe au laser d'un tel dispositif | |
US9678350B2 (en) | Laser with integrated multi line or scanning beam capability | |
FR3101728B1 (fr) | Dispositif électronique comprenant une puce et au moins un composant électronique dit composant SMT | |
JPH04210883A (ja) | レーザ照射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20220304 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |