FR3105577B1 - Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant - Google Patents

Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant Download PDF

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Publication number
FR3105577B1
FR3105577B1 FR1914700A FR1914700A FR3105577B1 FR 3105577 B1 FR3105577 B1 FR 3105577B1 FR 1914700 A FR1914700 A FR 1914700A FR 1914700 A FR1914700 A FR 1914700A FR 3105577 B1 FR3105577 B1 FR 3105577B1
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FR
France
Prior art keywords
rear face
image sensor
receive illumination
acquiring
sensor intended
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1914700A
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English (en)
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FR3105577A1 (fr
Inventor
François Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1914700A priority Critical patent/FR3105577B1/fr
Priority to US17/122,394 priority patent/US11676985B2/en
Publication of FR3105577A1 publication Critical patent/FR3105577A1/fr
Application granted granted Critical
Publication of FR3105577B1 publication Critical patent/FR3105577B1/fr
Priority to US18/198,384 priority patent/US11961868B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Un capteur d’image destiné à recevoir un éclairement par une face arrière (FAr) d’un substrat semiconducteur opposée à une face avant (FAv) du substrat, comporte au moins un pixel (PX) comprenant une pluralité de régions photosensibles dopées (S1, S2, S3) et superposées verticalement (Z) dans le substrat entre la face arrière (FAr) et la face avant (FAv). Chaque région photosensible (S1, S2, S3) est encadrée latéralement par une grille annulaire verticale (PG1, PG2, PG3) respective. Un circuit de commande (CMD) est configuré pour polariser les grilles annulaires verticales (PG1, PG2, PG3) pendant une phase d’intégration, de façon à générer un potentiel électrostatique (E) comprenant des puits de potentiel (PT1, PT2, PT3) dans la partie centrale du volume de chaque région photosensible (S1, S2, S3) et une barrière de potentiel (BR12, BR23) à chaque interfaces (I12, I23) entre deux régions photosensibles voisines. Figure pour l’abrégé : Fig 1
FR1914700A 2019-12-18 2019-12-18 Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant Active FR3105577B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1914700A FR3105577B1 (fr) 2019-12-18 2019-12-18 Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant
US17/122,394 US11676985B2 (en) 2019-12-18 2020-12-15 Image sensor intended to be illuminated via a back side, and corresponding method for acquiring a light flux
US18/198,384 US11961868B2 (en) 2019-12-18 2023-05-17 Image sensor intended to be illuminated via a back side, and corresponding method for acquiring a light flux

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1914700 2019-12-18
FR1914700A FR3105577B1 (fr) 2019-12-18 2019-12-18 Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant

Publications (2)

Publication Number Publication Date
FR3105577A1 FR3105577A1 (fr) 2021-06-25
FR3105577B1 true FR3105577B1 (fr) 2021-12-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FR1914700A Active FR3105577B1 (fr) 2019-12-18 2019-12-18 Capteur d’image destiné à recevoir un éclairement par une face arrière, et procédé d’acquisition d’un flux lumineux correspondant

Country Status (2)

Country Link
US (2) US11676985B2 (fr)
FR (1) FR3105577B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202332072A (zh) * 2022-01-19 2023-08-01 友達光電股份有限公司 感測裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6930336B1 (en) * 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
KR100720483B1 (ko) * 2005-12-09 2007-05-22 동부일렉트로닉스 주식회사 수직 칼라 필터 검출기단 및 그 제조방법
JP5369505B2 (ja) * 2008-06-09 2013-12-18 ソニー株式会社 固体撮像装置、及び電子機器
EP2216817B1 (fr) * 2009-02-05 2014-01-08 STMicroelectronics (Crolles 2) SAS Capteur d'images à semiconducteur à éclairement par la face arrière
JP6221341B2 (ja) * 2013-05-16 2017-11-01 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
KR102383649B1 (ko) * 2014-08-19 2022-04-08 삼성전자주식회사 Cmos 이미지 센서
FR3049389A1 (fr) * 2016-03-22 2017-09-29 St Microelectronics Crolles 2 Sas Mur d'isolement et son procede de fabrication
FR3052297A1 (fr) * 2016-06-06 2017-12-08 St Microelectronics Crolles 2 Sas Capteur d'image de type a obturation globale
KR102582122B1 (ko) * 2016-07-11 2023-09-21 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
US10163963B2 (en) * 2017-04-05 2018-12-25 Semiconductor Components Industries, Llc Image sensors with vertically stacked photodiodes and vertical transfer gates
US11348955B2 (en) * 2018-06-05 2022-05-31 Brillnics Singapore Pte. Ltd. Pixel structure for image sensors
KR20200145891A (ko) * 2019-06-19 2020-12-31 삼성전자주식회사 얽힌 픽셀을 포함하는 깊이 센서

Also Published As

Publication number Publication date
US20230290801A1 (en) 2023-09-14
FR3105577A1 (fr) 2021-06-25
US11676985B2 (en) 2023-06-13
US20210193708A1 (en) 2021-06-24
US11961868B2 (en) 2024-04-16

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