FR3091019B1 - Mémoire de puce électronique - Google Patents
Mémoire de puce électronique Download PDFInfo
- Publication number
- FR3091019B1 FR3091019B1 FR1873833A FR1873833A FR3091019B1 FR 3091019 B1 FR3091019 B1 FR 3091019B1 FR 1873833 A FR1873833 A FR 1873833A FR 1873833 A FR1873833 A FR 1873833A FR 3091019 B1 FR3091019 B1 FR 3091019B1
- Authority
- FR
- France
- Prior art keywords
- memory
- microchip memory
- association
- microchip
- abstract
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002427 irreversible effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Storage Device Security (AREA)
Abstract
Mémoire de puce électronique La présente description concerne un dispositif (900) comprenant une association en série d'un premier interrupteur (120) et d'une association en parallèle de premier (902) et deuxième (904) points mémoire à programmation irréversible. Figure pour l'abrégé : Fig. 9
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1873833A FR3091019B1 (fr) | 2018-12-21 | 2018-12-21 | Mémoire de puce électronique |
US16/709,019 US11250930B2 (en) | 2018-12-21 | 2019-12-10 | Electronic chip memory |
CN201911337268.3A CN111354410A (zh) | 2018-12-21 | 2019-12-23 | 电子芯片存储器 |
CN201922328536.7U CN211062472U (zh) | 2018-12-21 | 2019-12-23 | 器件和存储器 |
US17/647,793 US11621051B2 (en) | 2018-12-21 | 2022-01-12 | Electronic chip memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1873833A FR3091019B1 (fr) | 2018-12-21 | 2018-12-21 | Mémoire de puce électronique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3091019A1 FR3091019A1 (fr) | 2020-06-26 |
FR3091019B1 true FR3091019B1 (fr) | 2021-05-07 |
Family
ID=66867294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1873833A Active FR3091019B1 (fr) | 2018-12-21 | 2018-12-21 | Mémoire de puce électronique |
Country Status (3)
Country | Link |
---|---|
US (2) | US11250930B2 (fr) |
CN (2) | CN111354410A (fr) |
FR (1) | FR3091019B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11528126B2 (en) | 2021-02-16 | 2022-12-13 | Google Llc | Interface for revision-limited memory |
EP4303921A1 (fr) * | 2022-05-25 | 2024-01-10 | Changxin Memory Technologies, Inc. | Structure anti-fusible, réseau anti-fusible et mémoire |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5301159A (en) * | 1993-02-05 | 1994-04-05 | Micron Technology, Inc. | Anti-fuse circuit and method wherein the read operation and programming operation are reversed |
US5691664A (en) * | 1996-01-16 | 1997-11-25 | Motorola, Inc. | Programmable analog array and method for establishing a feedback loop therein |
KR100356774B1 (ko) * | 2000-11-22 | 2002-10-18 | 삼성전자 주식회사 | 반도체 메모리 장치의 결함 어드레스 저장 회로 |
DE10110469A1 (de) * | 2001-03-05 | 2002-09-26 | Infineon Technologies Ag | Integrierter Speicher und Verfahren zum Testen und Reparieren desselben |
US6798693B2 (en) * | 2001-09-18 | 2004-09-28 | Kilopass Technologies, Inc. | Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric |
US6775171B2 (en) * | 2002-11-27 | 2004-08-10 | Novocell Semiconductor, Inc. | Method of utilizing voltage gradients to guide dielectric breakdowns for non-volatile memory elements and related embedded memories |
US6897543B1 (en) | 2003-08-22 | 2005-05-24 | Altera Corporation | Electrically-programmable integrated circuit antifuses |
US8767433B2 (en) * | 2004-05-06 | 2014-07-01 | Sidense Corp. | Methods for testing unprogrammed OTP memory |
TW200907963A (en) * | 2007-08-02 | 2009-02-16 | Ind Tech Res Inst | Magnetic random access memory and operation method |
US8050076B2 (en) | 2009-08-07 | 2011-11-01 | Broadcom Corporation | One-time programmable memory cell with shiftable threshold voltage transistor |
US8283731B2 (en) | 2010-06-02 | 2012-10-09 | Kilopass Technologies, Inc. | One-time programmable memory |
JP5686698B2 (ja) * | 2011-08-05 | 2015-03-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20130135626A (ko) | 2012-06-01 | 2013-12-11 | 삼성전자주식회사 | 프로그램가능한 안티퓨즈 셀 어레이를 포함하는 메모리 장치 |
US9761595B2 (en) | 2013-02-21 | 2017-09-12 | Infineon Technologies Ag | One-time programming device and a semiconductor device |
JP2015026998A (ja) * | 2013-07-26 | 2015-02-05 | 株式会社東芝 | マルチコンテキストコンフィグレーションメモリ |
US9502133B2 (en) | 2013-10-11 | 2016-11-22 | Sharp Kabushiki Kaisha | Semiconductor device |
KR20160001152A (ko) | 2014-06-26 | 2016-01-06 | 삼성전자주식회사 | 비휘발성 메모리 소자 |
US9876123B2 (en) | 2014-07-16 | 2018-01-23 | Qualcomm Incorporated | Non-volatile one-time programmable memory device |
KR102274259B1 (ko) | 2014-11-26 | 2021-07-07 | 삼성전자주식회사 | 멀티 비트 프로그램을 위한 오티피 메모리 셀 및 오티피 메모리 장치 |
US10290352B2 (en) | 2015-02-27 | 2019-05-14 | Qualcomm Incorporated | System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions |
US9659944B2 (en) | 2015-06-30 | 2017-05-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | One time programmable memory with a twin gate structure |
WO2017117663A1 (fr) * | 2016-01-08 | 2017-07-13 | Sidense Corp. | Génération de valeur de fonction physique non clonable (puf) au moyen d'un réseau de mémoires anti-fusible |
US10170625B2 (en) | 2017-01-20 | 2019-01-01 | Globalfoundries Singapore Pte. Ltd. | Method for manufacturing a compact OTP/MTP technology |
FR3084771A1 (fr) | 2018-07-31 | 2020-02-07 | Stmicroelectronics (Rousset) Sas | Element anti-fusible compact et procede de fabrication |
-
2018
- 2018-12-21 FR FR1873833A patent/FR3091019B1/fr active Active
-
2019
- 2019-12-10 US US16/709,019 patent/US11250930B2/en active Active
- 2019-12-23 CN CN201911337268.3A patent/CN111354410A/zh active Pending
- 2019-12-23 CN CN201922328536.7U patent/CN211062472U/zh active Active
-
2022
- 2022-01-12 US US17/647,793 patent/US11621051B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11250930B2 (en) | 2022-02-15 |
FR3091019A1 (fr) | 2020-06-26 |
US20220139491A1 (en) | 2022-05-05 |
CN111354410A (zh) | 2020-06-30 |
US11621051B2 (en) | 2023-04-04 |
CN211062472U (zh) | 2020-07-21 |
US20200202972A1 (en) | 2020-06-25 |
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