FR3076916B1 - Modulateur de phase electro-optique - Google Patents
Modulateur de phase electro-optique Download PDFInfo
- Publication number
- FR3076916B1 FR3076916B1 FR1850290A FR1850290A FR3076916B1 FR 3076916 B1 FR3076916 B1 FR 3076916B1 FR 1850290 A FR1850290 A FR 1850290A FR 1850290 A FR1850290 A FR 1850290A FR 3076916 B1 FR3076916 B1 FR 3076916B1
- Authority
- FR
- France
- Prior art keywords
- strip
- electro
- phase modulator
- optical phase
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/06—Materials and properties dopant
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/50—Phase-only modulation
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
L'invention concerne un modulateur de phase électro-optique comprenant un guide d'onde (100) comportant un empilement d'une première bande (101) en un matériau semiconducteur dopé d'un premier type de conductivité, d'une deuxième bande (103) en matériau conducteur ou en un matériau semiconducteur dopé du deuxième type de conductivité, et d'une troisième bande (105) en un matériau semiconducteur dopé du premier type de conductivité, la deuxième bande étant séparée de la première bande par une première couche d'interface (107) en un matériau diélectrique et de la troisième bande par une deuxième couche d'interface (109) en un matériau diélectrique.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1850290A FR3076916B1 (fr) | 2018-01-15 | 2018-01-15 | Modulateur de phase electro-optique |
CN201920056890.6U CN209471312U (zh) | 2018-01-15 | 2019-01-14 | 电光相位调制器 |
CN202310116215.9A CN115903281A (zh) | 2018-01-15 | 2019-01-14 | 电光相位调制器 |
US16/247,096 US10795189B2 (en) | 2018-01-15 | 2019-01-14 | Electro-optical phase modulator |
CN201910033040.9A CN110045520B (zh) | 2018-01-15 | 2019-01-14 | 电光相位调制器 |
US17/009,468 US11822164B2 (en) | 2018-01-15 | 2020-09-01 | Electro-optical phase modulator |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1850290 | 2018-01-15 | ||
FR1850290A FR3076916B1 (fr) | 2018-01-15 | 2018-01-15 | Modulateur de phase electro-optique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3076916A1 FR3076916A1 (fr) | 2019-07-19 |
FR3076916B1 true FR3076916B1 (fr) | 2020-09-04 |
Family
ID=62067666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1850290A Active FR3076916B1 (fr) | 2018-01-15 | 2018-01-15 | Modulateur de phase electro-optique |
Country Status (3)
Country | Link |
---|---|
US (2) | US10795189B2 (fr) |
CN (3) | CN209471312U (fr) |
FR (1) | FR3076916B1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3076916B1 (fr) * | 2018-01-15 | 2020-09-04 | St Microelectronics Crolles 2 Sas | Modulateur de phase electro-optique |
US20230030971A1 (en) * | 2021-07-28 | 2023-02-02 | Cisco Technology, Inc. | Silicon germanium-based semiconductor-insulator-semiconductor capacitor (siscap) modulator |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5530777A (en) * | 1992-09-28 | 1996-06-25 | Matsushita Industrial Electric Co., Ltd. | Optical modulation device |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US7127128B2 (en) * | 2005-03-03 | 2006-10-24 | Avanex Corporation | Electro-optical device |
WO2009020432A1 (fr) * | 2007-08-08 | 2009-02-12 | Agency For Science, Technology And Research | Dispositif électrooptique et son procédé de fabrication |
US7747122B2 (en) * | 2008-09-30 | 2010-06-29 | Intel Corporation | Method and apparatus for high speed silicon optical modulation using PN diode |
KR101239134B1 (ko) * | 2008-12-10 | 2013-03-07 | 한국전자통신연구원 | 흡수 광변조기 및 그것의 제조 방법 |
SG173939A1 (en) * | 2010-03-01 | 2011-09-29 | Nec Corp | Silicon-based electro-optic device |
US8559769B2 (en) * | 2011-01-27 | 2013-10-15 | Alcatel Lucent | All-optical phase shifter in silicon |
US9703125B2 (en) * | 2013-03-26 | 2017-07-11 | Nec Corporation | Silicon-based electro-optic modulator |
US9766484B2 (en) * | 2014-01-24 | 2017-09-19 | Cisco Technology, Inc. | Electro-optical modulator using waveguides with overlapping ridges |
EP3123239B1 (fr) * | 2014-04-18 | 2023-05-31 | Huawei Technologies Co., Ltd. | Modulateur optique de condensateur mos doté de grille transparente conductrice et à faible indice de réfraction |
US9891450B2 (en) * | 2015-09-16 | 2018-02-13 | Stmicroelectronics (Crolles 2) Sas | Integrated electro-optic modulator |
FR3041115A1 (fr) * | 2015-09-16 | 2017-03-17 | St Microelectronics Crolles 2 Sas | Modulateur electro-optique integre |
US9798166B1 (en) * | 2017-01-24 | 2017-10-24 | Mellanox Technologies Silicon Photonics Inc. | Attenuator with improved fabrication consistency |
FR3076916B1 (fr) * | 2018-01-15 | 2020-09-04 | St Microelectronics Crolles 2 Sas | Modulateur de phase electro-optique |
-
2018
- 2018-01-15 FR FR1850290A patent/FR3076916B1/fr active Active
-
2019
- 2019-01-14 CN CN201920056890.6U patent/CN209471312U/zh not_active Withdrawn - After Issue
- 2019-01-14 CN CN201910033040.9A patent/CN110045520B/zh active Active
- 2019-01-14 US US16/247,096 patent/US10795189B2/en active Active
- 2019-01-14 CN CN202310116215.9A patent/CN115903281A/zh active Pending
-
2020
- 2020-09-01 US US17/009,468 patent/US11822164B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN115903281A (zh) | 2023-04-04 |
CN209471312U (zh) | 2019-10-08 |
CN110045520A (zh) | 2019-07-23 |
US10795189B2 (en) | 2020-10-06 |
FR3076916A1 (fr) | 2019-07-19 |
US11822164B2 (en) | 2023-11-21 |
CN110045520B (zh) | 2023-02-28 |
US20190219847A1 (en) | 2019-07-18 |
US20200400978A1 (en) | 2020-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3076916B1 (fr) | Modulateur de phase electro-optique | |
EP3230793B1 (fr) | Terminaison de modulateur électro-optique | |
US20080089634A1 (en) | Segmented optical modulator | |
ES204001A1 (es) | UN SISTEMA DE LiNEA DE TRANSMISIoN | |
EP3282306A1 (fr) | Dispositif de modulation optique | |
KR20160053840A (ko) | 어레이 기판과 그 제조 방법, 및 표시 장치 | |
KR930020679A (ko) | 반도체 장치 | |
FR3062517B1 (fr) | Structure pour application radiofrequence | |
FR3064083B1 (fr) | Filtre interferentiel | |
ES309288A3 (es) | Un dispositivo electrico de estado solido. | |
MX2020013455A (es) | Elemento funcional que tiene propiedades opticas controlables electricamente. | |
US20170309770A1 (en) | An apparatus and method for sensing | |
KR980005906A (ko) | 반도체 장치 | |
GB2407644B (en) | A coplanar waveguide line | |
FR3076660B1 (fr) | Dispositif integre de cellule capacitive de remplissage et procede de fabrication correspondant | |
NO116329B (fr) | ||
FR3059464B1 (fr) | Circuit electronique comprenant des tranchees d'isolation electrique | |
US20200348542A1 (en) | Heating Electrode For Lowering Stress Of Light Waveguide And Voa Thereof | |
KR840002777A (ko) | 마이크로웨이브 파장효과 트랜지스터 | |
TW200512468A (en) | Method for evaluating semiconductor device | |
Biswas et al. | High electron mobility transistor: physics-based TCAD simulation and performance analysis | |
ES2143986T3 (es) | Transistor supraconductor con efecto de campo y procedimiento de una estructura multicapa tal como la utilizada en el transistor. | |
CN106298871B (zh) | 半导体结构 | |
US3344322A (en) | Metal-oxide-semiconductor field effect transistor | |
FR3098977B1 (fr) | Modulateur optique capacitif |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20190719 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |