FR3069702B1 - Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif - Google Patents

Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif Download PDF

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Publication number
FR3069702B1
FR3069702B1 FR1757144A FR1757144A FR3069702B1 FR 3069702 B1 FR3069702 B1 FR 3069702B1 FR 1757144 A FR1757144 A FR 1757144A FR 1757144 A FR1757144 A FR 1757144A FR 3069702 B1 FR3069702 B1 FR 3069702B1
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France
Prior art keywords
transistors
transistor
semiconductor
solid substrate
forming
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1757144A
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English (en)
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FR3069702A1 (fr
Inventor
Franck Julien
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STMicroelectronics Rousset SAS
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STMicroelectronics Rousset SAS
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Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1757144A priority Critical patent/FR3069702B1/fr
Priority to CN201821096026.0U priority patent/CN208580743U/zh
Priority to CN201810760154.9A priority patent/CN109309098B/zh
Priority to US16/046,683 priority patent/US10777552B2/en
Publication of FR3069702A1 publication Critical patent/FR3069702A1/fr
Application granted granted Critical
Publication of FR3069702B1 publication Critical patent/FR3069702B1/fr
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8236—Combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un procédé de fabrication simultanée d'un transistor MOS de type SOI, et de premier et deuxième transistors sur substrat massif, comprenant : a) prévoir une couche semiconductrice (104) sur une couche isolante (102) recouvrant un substrat semiconducteur (100) ; b) former un masque comportant, au-dessus de l'emplacement (202N) du deuxième transistor, une ouverture centrale moins large que le deuxième transistor à former ; c) à l'aplomb de l'ouverture, graver entièrement les couches semiconductrice et isolante, d'où il résulte des portions restantes (210) de la couche isolante à l'emplacement du deuxième transistor ; d) faire croître par épitaxie du semiconducteur jusqu'au niveau supérieur de la couche semiconductrice (104) ; e) former des tranchées isolantes (124) ; et f) former les isolants de grille (132, 220) des transistors, l'isolant de grille (220) du deuxième transistor comprenant au moins une partie desdites portions restantes (210) de la couche isolante (102).
FR1757144A 2017-07-27 2017-07-27 Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif Expired - Fee Related FR3069702B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1757144A FR3069702B1 (fr) 2017-07-27 2017-07-27 Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif
CN201821096026.0U CN208580743U (zh) 2017-07-27 2018-07-11 电子芯片
CN201810760154.9A CN109309098B (zh) 2017-07-27 2018-07-11 同时制造soi晶体管和体衬底上的晶体管的方法
US16/046,683 US10777552B2 (en) 2017-07-27 2018-07-26 Method of simultaneous fabrication of SOI transistors and of transistors on bulk substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1757144A FR3069702B1 (fr) 2017-07-27 2017-07-27 Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif
FR1757144 2017-07-27

Publications (2)

Publication Number Publication Date
FR3069702A1 FR3069702A1 (fr) 2019-02-01
FR3069702B1 true FR3069702B1 (fr) 2020-01-24

Family

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FR1757144A Expired - Fee Related FR3069702B1 (fr) 2017-07-27 2017-07-27 Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif

Country Status (3)

Country Link
US (1) US10777552B2 (fr)
CN (2) CN109309098B (fr)
FR (1) FR3069702B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3069702B1 (fr) * 2017-07-27 2020-01-24 Stmicroelectronics (Rousset) Sas Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0964367A (ja) * 1995-08-24 1997-03-07 Citizen Watch Co Ltd 半導体装置およびその製造方法
US6097069A (en) * 1998-06-22 2000-08-01 International Business Machines Corporation Method and structure for increasing the threshold voltage of a corner device
KR20030044343A (ko) * 2001-11-29 2003-06-09 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법
US7410840B2 (en) * 2005-03-28 2008-08-12 Texas Instruments Incorporated Building fully-depleted and bulk transistors on same chip
JP5222520B2 (ja) * 2007-10-11 2013-06-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
EP2381470B1 (fr) * 2010-04-22 2012-08-22 Soitec Dispositif semi-conducteur comprenant un transistor à effet de champ dans une structure silicium sur isolant
JP5837387B2 (ja) * 2011-10-11 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
US9786755B2 (en) * 2015-03-18 2017-10-10 Stmicroelectronics (Crolles 2) Sas Process for producing, from an SOI and in particular an FDSOI type substrate, transistors having gate oxides of different thicknesses, and corresponding integrated circuit
FR3069702B1 (fr) * 2017-07-27 2020-01-24 Stmicroelectronics (Rousset) Sas Procede de fabrication simultanee de transistors soi et de transistors sur substrat massif

Also Published As

Publication number Publication date
US10777552B2 (en) 2020-09-15
FR3069702A1 (fr) 2019-02-01
CN109309098B (zh) 2023-05-23
US20190035784A1 (en) 2019-01-31
CN109309098A (zh) 2019-02-05
CN208580743U (zh) 2019-03-05

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