FR3055969B1 - Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique - Google Patents
Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique Download PDFInfo
- Publication number
- FR3055969B1 FR3055969B1 FR1658594A FR1658594A FR3055969B1 FR 3055969 B1 FR3055969 B1 FR 3055969B1 FR 1658594 A FR1658594 A FR 1658594A FR 1658594 A FR1658594 A FR 1658594A FR 3055969 B1 FR3055969 B1 FR 3055969B1
- Authority
- FR
- France
- Prior art keywords
- magnetic field
- determination
- electric field
- sample
- determining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 0 CCC1(*)NCC1 Chemical compound CCC1(*)NCC1 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/2055—Analysing diffraction patterns
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/06—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/266—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy
- H01J37/268—Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
- H01J37/2955—Electron or ion diffraction tubes using scanning ray
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2803—Scanning microscopes characterised by the imaging method
- H01J2237/2804—Scattered primary beam
- H01J2237/2805—Elastic scattering
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Méthode de détermination d'un champ électrique local et/ou d'un champ magnétique local dans un échantillon et/ou de la constante diélectrique d'un matériau et/ou de l'angle entre les surfaces d'entrée et de sortie de l'échantillon, comportant les étapes : - illumination de l'échantillon par un faisceau d'électrons en mode précession au moyen d'un dispositif d'illumination, - établissement d'un cliché de diffraction, - détermination du décalage du disque correspondant au faisceau transmis du au champ électrique et/ou du champ magnétique, par comparaison du cliché de diffraction et d'un cliché de diffraction de référence, - détermination d'un angle de déflexion du faisceau transmis, - détermination de la valeur du champ électrique local et/ou du champ magnétique local de l'échantillon et/ou détermination de la constante diélectrique de matériaux et/ou détermination de l'angle entre les surfaces d'entrée et de sortie de l'échantillon.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1658594A FR3055969B1 (fr) | 2016-09-14 | 2016-09-14 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
FR1753992A FR3055970B1 (fr) | 2016-09-14 | 2017-05-05 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
US15/703,557 US10593511B2 (en) | 2016-09-14 | 2017-09-13 | Method of determining the deflection of an electron beam resulting from an electric field and/or a magnetic field |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1658594 | 2016-09-14 | ||
FR1658594A FR3055969B1 (fr) | 2016-09-14 | 2016-09-14 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3055969A1 FR3055969A1 (fr) | 2018-03-16 |
FR3055969B1 true FR3055969B1 (fr) | 2020-02-07 |
Family
ID=57960522
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1658594A Active FR3055969B1 (fr) | 2016-09-14 | 2016-09-14 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
FR1753992A Active FR3055970B1 (fr) | 2016-09-14 | 2017-05-05 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1753992A Active FR3055970B1 (fr) | 2016-09-14 | 2017-05-05 | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique |
Country Status (2)
Country | Link |
---|---|
US (1) | US10593511B2 (fr) |
FR (2) | FR3055969B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110542700B (zh) * | 2018-05-28 | 2022-01-28 | 中国科学院上海微系统与信息技术研究所 | 一种低能电子衍射仪 |
JP7193694B2 (ja) * | 2018-07-26 | 2022-12-21 | 国立研究開発法人理化学研究所 | 電子顕微鏡およびそれを用いた試料観察方法 |
CN109166781A (zh) * | 2018-09-11 | 2019-01-08 | 镇江乐华电子科技有限公司 | 扫描透射电子显微成像方法和系统 |
JP7083869B2 (ja) * | 2020-07-20 | 2022-06-13 | 日本電子株式会社 | 画像処理方法および画像処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2351063B1 (fr) | 2008-11-06 | 2016-01-27 | Nanomegas SPRL | Procédé et dispositif pour l'analyse de structure cristalline à haut rendement par la diffraction d'électrons |
US8076640B2 (en) * | 2009-08-27 | 2011-12-13 | Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Method and device for measuring electron diffraction of a sample |
EP2413345B1 (fr) * | 2010-07-29 | 2013-02-20 | Carl Zeiss NTS GmbH | Système d'irradiation par particules chargées |
FR2965617B1 (fr) | 2010-10-04 | 2015-08-07 | Commissariat Energie Atomique | Procede pour faciliter la localisation de taches de diffraction |
US9274070B2 (en) | 2012-03-08 | 2016-03-01 | Appfive, Llc | System and process for measuring strain in materials at high spatial resolution |
EP2642279B1 (fr) * | 2012-03-19 | 2015-07-01 | Universidad de Barcelona | Procédé et système pour améliorer les signaux de pic caractéristique dans la microscopie électronique analytique |
FR3030043B1 (fr) | 2014-12-12 | 2017-12-22 | Commissariat Energie Atomique | Procede d'etude d'une zone d'un objet pour en determiner une epaisseur massique et une composition en utilisant un faisceau d'electrons et des mesures d'intensite d'un rayonnement x |
-
2016
- 2016-09-14 FR FR1658594A patent/FR3055969B1/fr active Active
-
2017
- 2017-05-05 FR FR1753992A patent/FR3055970B1/fr active Active
- 2017-09-13 US US15/703,557 patent/US10593511B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10593511B2 (en) | 2020-03-17 |
FR3055969A1 (fr) | 2018-03-16 |
FR3055970A1 (fr) | 2018-03-16 |
FR3055970B1 (fr) | 2020-06-26 |
US20180076005A1 (en) | 2018-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR3055969B1 (fr) | Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique | |
EP2779209B1 (fr) | Dispositif de determination de la masse d'une particule en suspension ou en solution dans un fluide | |
CN102121902B (zh) | 一种在线拉曼光谱仪校正装置及其校正方法 | |
WO2019075476A3 (fr) | Procédés, systèmes et kits pour essais « en enclos » | |
Jordan et al. | Shock response of polymethylmethacrylate | |
RU2017113013A (ru) | Двухрежимный спектрометр ионной подвижности | |
FR3022998B1 (fr) | Systeme et ensemble de cytometrie en flux, dispositif d’analyse comprenant un tel ensemble de cytometrie et ensemble comprenant un tel systeme de cytometrie | |
WO2014144725A3 (fr) | Anticorps monoclonal de mélatonine, détection, procédés et utilisations de celui-ci | |
WO2015140411A3 (fr) | Système de mesure et procédé de mesure d'échantillon | |
WO2019002656A3 (fr) | Appareil pour déterminer la puissance optique de lentilles et procédé de mesure | |
EP4220125A3 (fr) | Appareil d'analyse | |
EP3128303A3 (fr) | Surveillance de processus spectrale in situ | |
EP4300101A3 (fr) | Peptides antigéniques et leurs utilisations pour diagnostiquer et traiter l'autisme | |
CN207407823U (zh) | 一种大视场样本厚度测量装置 | |
CN105223148A (zh) | 多量程气体检测装置及方法 | |
GB2535063A (en) | Desktop hyperspectral spectra collection of geological material | |
CN103868604A (zh) | 基于分子电离探测的飞秒激光脉冲宽度测量装置 | |
WO2019150606A8 (fr) | Appareil de mesure | |
CN203824653U (zh) | 一种基于分子电离探测的飞秒激光脉冲宽度测量仪 | |
WO2014108528A3 (fr) | Dispositif de mesure de polarisation, appareil de lithographie, agencement de mesure et procédé de mesure de polarisation | |
MX2016017048A (es) | Inmunoensayo reactivo y colaborativo potenciado por enzimas (ceer) usando citometria de flujo. | |
Knust et al. | Video-based and interference-free axial force detection and analysis for optical tweezers | |
WO2015004358A1 (fr) | Dispositif pour compenser la dérive d'un déphasage d'un modulateur d'état de polarisation d'un faisceau lumineux | |
RU2618597C2 (ru) | Способ аспирационной оптической спектрометрии аэрозоля | |
RU2560142C1 (ru) | Способ аспирационной оптической спектрометрии дисперсной среды |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20180316 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |