FR3055969B1 - Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique - Google Patents

Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique Download PDF

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Publication number
FR3055969B1
FR3055969B1 FR1658594A FR1658594A FR3055969B1 FR 3055969 B1 FR3055969 B1 FR 3055969B1 FR 1658594 A FR1658594 A FR 1658594A FR 1658594 A FR1658594 A FR 1658594A FR 3055969 B1 FR3055969 B1 FR 3055969B1
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Prior art keywords
magnetic field
determination
electric field
sample
determining
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Active
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FR1658594A
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English (en)
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FR3055969A1 (fr
Inventor
Benedikt HAAS
David Cooper
Jean Luc Rouviere
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Priority to FR1658594A priority Critical patent/FR3055969B1/fr
Priority to FR1753992A priority patent/FR3055970B1/fr
Priority to US15/703,557 priority patent/US10593511B2/en
Publication of FR3055969A1 publication Critical patent/FR3055969A1/fr
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055Analysing diffraction patterns
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/06Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08Measuring electromagnetic field characteristics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/266Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy
    • H01J37/268Measurement of magnetic- or electric fields in the object; Lorentzmicroscopy with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295Electron or ion diffraction tubes
    • H01J37/2955Electron or ion diffraction tubes using scanning ray
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/2614Holography or phase contrast, phase related imaging in general, e.g. phase plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2803Scanning microscopes characterised by the imaging method
    • H01J2237/2804Scattered primary beam
    • H01J2237/2805Elastic scattering

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

Méthode de détermination d'un champ électrique local et/ou d'un champ magnétique local dans un échantillon et/ou de la constante diélectrique d'un matériau et/ou de l'angle entre les surfaces d'entrée et de sortie de l'échantillon, comportant les étapes : - illumination de l'échantillon par un faisceau d'électrons en mode précession au moyen d'un dispositif d'illumination, - établissement d'un cliché de diffraction, - détermination du décalage du disque correspondant au faisceau transmis du au champ électrique et/ou du champ magnétique, par comparaison du cliché de diffraction et d'un cliché de diffraction de référence, - détermination d'un angle de déflexion du faisceau transmis, - détermination de la valeur du champ électrique local et/ou du champ magnétique local de l'échantillon et/ou détermination de la constante diélectrique de matériaux et/ou détermination de l'angle entre les surfaces d'entrée et de sortie de l'échantillon.
FR1658594A 2016-09-14 2016-09-14 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique Active FR3055969B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1658594A FR3055969B1 (fr) 2016-09-14 2016-09-14 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique
FR1753992A FR3055970B1 (fr) 2016-09-14 2017-05-05 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique
US15/703,557 US10593511B2 (en) 2016-09-14 2017-09-13 Method of determining the deflection of an electron beam resulting from an electric field and/or a magnetic field

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1658594 2016-09-14
FR1658594A FR3055969B1 (fr) 2016-09-14 2016-09-14 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique

Publications (2)

Publication Number Publication Date
FR3055969A1 FR3055969A1 (fr) 2018-03-16
FR3055969B1 true FR3055969B1 (fr) 2020-02-07

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FR1658594A Active FR3055969B1 (fr) 2016-09-14 2016-09-14 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique
FR1753992A Active FR3055970B1 (fr) 2016-09-14 2017-05-05 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique

Family Applications After (1)

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FR1753992A Active FR3055970B1 (fr) 2016-09-14 2017-05-05 Methode de determination de la deflexion d'un faisceau d'electrons resultant d'un champ electrique et/ou d'un champ magnetique

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US (1) US10593511B2 (fr)
FR (2) FR3055969B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110542700B (zh) * 2018-05-28 2022-01-28 中国科学院上海微系统与信息技术研究所 一种低能电子衍射仪
JP7193694B2 (ja) * 2018-07-26 2022-12-21 国立研究開発法人理化学研究所 電子顕微鏡およびそれを用いた試料観察方法
CN109166781A (zh) * 2018-09-11 2019-01-08 镇江乐华电子科技有限公司 扫描透射电子显微成像方法和系统
JP7083869B2 (ja) * 2020-07-20 2022-06-13 日本電子株式会社 画像処理方法および画像処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2351063B1 (fr) 2008-11-06 2016-01-27 Nanomegas SPRL Procédé et dispositif pour l'analyse de structure cristalline à haut rendement par la diffraction d'électrons
US8076640B2 (en) * 2009-08-27 2011-12-13 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Method and device for measuring electron diffraction of a sample
EP2413345B1 (fr) * 2010-07-29 2013-02-20 Carl Zeiss NTS GmbH Système d'irradiation par particules chargées
FR2965617B1 (fr) 2010-10-04 2015-08-07 Commissariat Energie Atomique Procede pour faciliter la localisation de taches de diffraction
US9274070B2 (en) 2012-03-08 2016-03-01 Appfive, Llc System and process for measuring strain in materials at high spatial resolution
EP2642279B1 (fr) * 2012-03-19 2015-07-01 Universidad de Barcelona Procédé et système pour améliorer les signaux de pic caractéristique dans la microscopie électronique analytique
FR3030043B1 (fr) 2014-12-12 2017-12-22 Commissariat Energie Atomique Procede d'etude d'une zone d'un objet pour en determiner une epaisseur massique et une composition en utilisant un faisceau d'electrons et des mesures d'intensite d'un rayonnement x

Also Published As

Publication number Publication date
US10593511B2 (en) 2020-03-17
FR3055969A1 (fr) 2018-03-16
FR3055970A1 (fr) 2018-03-16
FR3055970B1 (fr) 2020-06-26
US20180076005A1 (en) 2018-03-15

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