FR3004585B1 - Structures semi-conductrices dotees de regions actives comprenant de l'ingan - Google Patents

Structures semi-conductrices dotees de regions actives comprenant de l'ingan

Info

Publication number
FR3004585B1
FR3004585B1 FR1300923A FR1300923A FR3004585B1 FR 3004585 B1 FR3004585 B1 FR 3004585B1 FR 1300923 A FR1300923 A FR 1300923A FR 1300923 A FR1300923 A FR 1300923A FR 3004585 B1 FR3004585 B1 FR 3004585B1
Authority
FR
France
Prior art keywords
ingan
active regions
semiconductor structures
semiconductor
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1300923A
Other languages
English (en)
French (fr)
Other versions
FR3004585A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1300923A priority Critical patent/FR3004585B1/fr
Priority to TW103109798A priority patent/TWI626765B/zh
Priority to DE112014001423.0T priority patent/DE112014001423T5/de
Priority to DE112014001385.4T priority patent/DE112014001385T5/de
Priority to KR1020157026564A priority patent/KR20150130331A/ko
Priority to KR1020157026743A priority patent/KR20150132204A/ko
Priority to JP2015562260A priority patent/JP2016513879A/ja
Priority to CN201480015148.0A priority patent/CN105051921A/zh
Priority to PCT/EP2014/055316 priority patent/WO2014140371A1/en
Priority to CN201480015241.1A priority patent/CN105051920A/zh
Priority to CN201480014065.XA priority patent/CN105051918A/zh
Priority to DE112014001352.8T priority patent/DE112014001352T5/de
Priority to JP2015562262A priority patent/JP2016513880A/ja
Priority to PCT/EP2014/055318 priority patent/WO2014140372A1/en
Priority to KR1020157026427A priority patent/KR102120682B1/ko
Priority to PCT/EP2014/055314 priority patent/WO2014140370A1/en
Priority to JP2015562261A priority patent/JP2016517627A/ja
Publication of FR3004585A1 publication Critical patent/FR3004585A1/fr
Application granted granted Critical
Publication of FR3004585B1 publication Critical patent/FR3004585B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
FR1300923A 2013-03-15 2013-04-12 Structures semi-conductrices dotees de regions actives comprenant de l'ingan Active FR3004585B1 (fr)

Priority Applications (17)

Application Number Priority Date Filing Date Title
FR1300923A FR3004585B1 (fr) 2013-04-12 2013-04-12 Structures semi-conductrices dotees de regions actives comprenant de l'ingan
TW103109798A TWI626765B (zh) 2013-03-15 2014-03-14 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
DE112014001352.8T DE112014001352T5 (de) 2013-03-15 2014-03-17 Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten
KR1020157026564A KR20150130331A (ko) 2013-03-15 2014-03-17 Ingan을 포함하는 활성 영역을 가지는 발광 다이오드 반도체 구조
KR1020157026743A KR20150132204A (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
JP2015562260A JP2016513879A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体発光構造及びその製造の方法
CN201480015148.0A CN105051921A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的发光二极管半导体结构体
PCT/EP2014/055316 WO2014140371A1 (en) 2013-03-15 2014-03-17 Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures
DE112014001423.0T DE112014001423T5 (de) 2013-03-15 2014-03-17 Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen
CN201480014065.XA CN105051918A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件
DE112014001385.4T DE112014001385T5 (de) 2013-03-15 2014-03-17 Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung
JP2015562262A JP2016513880A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している発光ダイオード半導体構造
PCT/EP2014/055318 WO2014140372A1 (en) 2013-03-15 2014-03-17 Light emitting diode semiconductor structures having active regions comprising ingan
KR1020157026427A KR102120682B1 (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
PCT/EP2014/055314 WO2014140370A1 (en) 2013-03-15 2014-03-17 Semiconductor light emitting structure having active region comprising ingan and method of its fabrication
JP2015562261A JP2016517627A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
CN201480015241.1A CN105051920A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体发光结构体及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1300923A FR3004585B1 (fr) 2013-04-12 2013-04-12 Structures semi-conductrices dotees de regions actives comprenant de l'ingan

Publications (2)

Publication Number Publication Date
FR3004585A1 FR3004585A1 (enExample) 2014-10-17
FR3004585B1 true FR3004585B1 (fr) 2017-12-29

Family

ID=48795609

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1300923A Active FR3004585B1 (fr) 2013-03-15 2013-04-12 Structures semi-conductrices dotees de regions actives comprenant de l'ingan

Country Status (1)

Country Link
FR (1) FR3004585B1 (enExample)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR100670531B1 (ko) * 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100765004B1 (ko) * 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
CN101208810B (zh) * 2005-03-24 2010-05-12 科技研究局 Ⅲ族氮化物白光发光二极管
WO2007138657A1 (ja) * 2006-05-26 2007-12-06 Rohm Co., Ltd. 窒化物半導体発光素子

Also Published As

Publication number Publication date
FR3004585A1 (enExample) 2014-10-17

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