FR3000838B1 - Procede de fabrication d’une memoire non volatile - Google Patents

Procede de fabrication d’une memoire non volatile

Info

Publication number
FR3000838B1
FR3000838B1 FR1350097A FR1350097A FR3000838B1 FR 3000838 B1 FR3000838 B1 FR 3000838B1 FR 1350097 A FR1350097 A FR 1350097A FR 1350097 A FR1350097 A FR 1350097A FR 3000838 B1 FR3000838 B1 FR 3000838B1
Authority
FR
France
Prior art keywords
volatile memory
manufacturing non
manufacturing
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1350097A
Other languages
English (en)
Other versions
FR3000838A1 (fr
Inventor
Rosa Francesco La
Stephan Niel
Arnaud Regnier
Helene Dalle-Houilliez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1350097A priority Critical patent/FR3000838B1/fr
Priority to US14/148,257 priority patent/US9012961B2/en
Publication of FR3000838A1 publication Critical patent/FR3000838A1/fr
Application granted granted Critical
Publication of FR3000838B1 publication Critical patent/FR3000838B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
FR1350097A 2013-01-07 2013-01-07 Procede de fabrication d’une memoire non volatile Expired - Fee Related FR3000838B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1350097A FR3000838B1 (fr) 2013-01-07 2013-01-07 Procede de fabrication d’une memoire non volatile
US14/148,257 US9012961B2 (en) 2013-01-07 2014-01-06 Method of manufacturing a non-volatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1350097A FR3000838B1 (fr) 2013-01-07 2013-01-07 Procede de fabrication d’une memoire non volatile

Publications (2)

Publication Number Publication Date
FR3000838A1 FR3000838A1 (fr) 2014-07-11
FR3000838B1 true FR3000838B1 (fr) 2015-01-02

Family

ID=48170658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1350097A Expired - Fee Related FR3000838B1 (fr) 2013-01-07 2013-01-07 Procede de fabrication d’une memoire non volatile

Country Status (2)

Country Link
US (1) US9012961B2 (fr)
FR (1) FR3000838B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3046247B1 (fr) * 2015-12-28 2018-06-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit integre pour detection d’un defaut d’isolation avec une armature conductrice
FR3080949B1 (fr) * 2018-05-04 2021-05-28 St Microelectronics Rousset Dispositif de memoire non volatile du type a piegeage de charges et procede de fabrication
FR3114686B1 (fr) 2020-09-30 2023-03-31 St Microelectronics Rousset Transistor MOS à triple grille et procédé de fabrication d’un tel transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW546778B (en) * 2001-04-20 2003-08-11 Koninkl Philips Electronics Nv Two-transistor flash cell
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
US7193900B2 (en) * 2005-01-18 2007-03-20 Mammen Thomas CACT-TG (CATT) low voltage NVM cells
TWI270199B (en) * 2005-01-31 2007-01-01 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
US8081515B2 (en) * 2008-04-04 2011-12-20 Trom Trench monos memory cell and array
JP5938272B2 (ja) * 2012-05-23 2016-06-22 ルネサスエレクトロニクス株式会社 トランジスタ及びその製造方法
US20140151757A1 (en) * 2012-12-03 2014-06-05 International Business Machines Corporation Substrate-templated epitaxial source/drain contact structures
FR3002811B1 (fr) * 2013-03-01 2016-05-27 St Microelectronics Rousset Circuit intégré protégé contre des courts-circuits causés par le siliciure.
US8940595B2 (en) * 2013-03-15 2015-01-27 International Business Machines Corporation Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels

Also Published As

Publication number Publication date
FR3000838A1 (fr) 2014-07-11
US20140191291A1 (en) 2014-07-10
US9012961B2 (en) 2015-04-21

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