FR2994022B1 - Procede de mise en contact d'une matiere semi-conductrice avec une couche de contact et composant semi-conducteur obtenu - Google Patents

Procede de mise en contact d'une matiere semi-conductrice avec une couche de contact et composant semi-conducteur obtenu

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Publication number
FR2994022B1
FR2994022B1 FR1357293A FR1357293A FR2994022B1 FR 2994022 B1 FR2994022 B1 FR 2994022B1 FR 1357293 A FR1357293 A FR 1357293A FR 1357293 A FR1357293 A FR 1357293A FR 2994022 B1 FR2994022 B1 FR 2994022B1
Authority
FR
France
Prior art keywords
contacting
contact layer
component obtained
semiconductor
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1357293A
Other languages
English (en)
Other versions
FR2994022A1 (fr
Inventor
Thomas Suenner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2994022A1 publication Critical patent/FR2994022A1/fr
Application granted granted Critical
Publication of FR2994022B1 publication Critical patent/FR2994022B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1357293A 2012-07-25 2013-07-24 Procede de mise en contact d'une matiere semi-conductrice avec une couche de contact et composant semi-conducteur obtenu Active FR2994022B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012213077.2A DE102012213077A1 (de) 2012-07-25 2012-07-25 Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage

Publications (2)

Publication Number Publication Date
FR2994022A1 FR2994022A1 (fr) 2014-01-31
FR2994022B1 true FR2994022B1 (fr) 2016-11-18

Family

ID=48607230

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1357293A Active FR2994022B1 (fr) 2012-07-25 2013-07-24 Procede de mise en contact d'une matiere semi-conductrice avec une couche de contact et composant semi-conducteur obtenu

Country Status (5)

Country Link
US (1) US20150206750A1 (fr)
CN (1) CN104471681B (fr)
DE (1) DE102012213077A1 (fr)
FR (1) FR2994022B1 (fr)
WO (1) WO2014016025A1 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69428387T2 (de) * 1993-02-15 2002-07-04 Semiconductor Energy Lab Herstellungsverfahren für eine kristallisierte Halbleiterschicht
US8816443B2 (en) * 2001-10-12 2014-08-26 Quantum Semiconductor Llc Method of fabricating heterojunction photodiodes with CMOS
CN1532943B (zh) * 2003-03-18 2011-11-23 松下电器产业株式会社 碳化硅半导体器件及其制造方法
GB2424312B (en) * 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
US8435895B2 (en) * 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
JP5282382B2 (ja) * 2007-08-17 2013-09-04 富士電機株式会社 炭化珪素半導体装置、その製造方法および炭化珪素デバイス
US8896122B2 (en) * 2010-05-12 2014-11-25 Cree, Inc. Semiconductor devices having gates including oxidized nickel
US8030154B1 (en) * 2010-08-03 2011-10-04 International Business Machines Corporation Method for forming a protection layer over metal semiconductor contact and structure formed thereon
DE102011016335B4 (de) * 2011-04-07 2013-10-02 Universität Konstanz Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle
WO2012140795A1 (fr) * 2011-04-11 2012-10-18 新電元工業株式会社 Dispositif semi-conducteur au carbure de silicium et procédé de fabrication de celui-ci
JP5561343B2 (ja) * 2012-11-05 2014-07-30 富士電機株式会社 炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
CN104471681A (zh) 2015-03-25
FR2994022A1 (fr) 2014-01-31
CN104471681B (zh) 2018-04-24
DE102012213077A1 (de) 2014-01-30
WO2014016025A1 (fr) 2014-01-30
US20150206750A1 (en) 2015-07-23

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