FR2975224B1 - Dispositif de protection haute performance contre des decharges electrostatiques - Google Patents

Dispositif de protection haute performance contre des decharges electrostatiques

Info

Publication number
FR2975224B1
FR2975224B1 FR1154120A FR1154120A FR2975224B1 FR 2975224 B1 FR2975224 B1 FR 2975224B1 FR 1154120 A FR1154120 A FR 1154120A FR 1154120 A FR1154120 A FR 1154120A FR 2975224 B1 FR2975224 B1 FR 2975224B1
Authority
FR
France
Prior art keywords
protection device
high performance
device against
against electrostatic
electrostatic discharges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1154120A
Other languages
English (en)
Other versions
FR2975224A1 (fr
Inventor
Philippe Galy
Jean Jimenez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1154120A priority Critical patent/FR2975224B1/fr
Priority to US13/457,134 priority patent/US9324703B2/en
Priority to CN201210153845.5A priority patent/CN102779817B/zh
Priority to CN2012202240059U priority patent/CN202678313U/zh
Publication of FR2975224A1 publication Critical patent/FR2975224A1/fr
Application granted granted Critical
Publication of FR2975224B1 publication Critical patent/FR2975224B1/fr
Priority to US15/087,622 priority patent/US9455247B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Elimination Of Static Electricity (AREA)
FR1154120A 2011-05-12 2011-05-12 Dispositif de protection haute performance contre des decharges electrostatiques Expired - Fee Related FR2975224B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1154120A FR2975224B1 (fr) 2011-05-12 2011-05-12 Dispositif de protection haute performance contre des decharges electrostatiques
US13/457,134 US9324703B2 (en) 2011-05-12 2012-04-26 High-performance device for protection from electrostatic discharge
CN201210153845.5A CN102779817B (zh) 2011-05-12 2012-05-11 用于保护不受静电放电伤害的高性能器件
CN2012202240059U CN202678313U (zh) 2011-05-12 2012-05-11 用于保护不受静电放电伤害的半导体器件和集成电路
US15/087,622 US9455247B2 (en) 2011-05-12 2016-03-31 High-performance device for protection from electrostatic discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1154120A FR2975224B1 (fr) 2011-05-12 2011-05-12 Dispositif de protection haute performance contre des decharges electrostatiques

Publications (2)

Publication Number Publication Date
FR2975224A1 FR2975224A1 (fr) 2012-11-16
FR2975224B1 true FR2975224B1 (fr) 2013-07-26

Family

ID=44549642

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1154120A Expired - Fee Related FR2975224B1 (fr) 2011-05-12 2011-05-12 Dispositif de protection haute performance contre des decharges electrostatiques

Country Status (3)

Country Link
US (2) US9324703B2 (fr)
CN (2) CN202678313U (fr)
FR (1) FR2975224B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2975224B1 (fr) 2011-05-12 2013-07-26 St Microelectronics Sa Dispositif de protection haute performance contre des decharges electrostatiques
FR3001085A1 (fr) * 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
US8901715B1 (en) * 2013-07-05 2014-12-02 Infineon Technologies Ag Method for manufacturing a marked single-crystalline substrate and semiconductor device with marking
CN112310066A (zh) 2019-07-29 2021-02-02 力特半导体（无锡）有限公司 具有二极管和硅控制整流器布置的半导体放电防护装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820552B2 (ja) * 1977-01-26 1983-04-23 株式会社東芝 サイリスタ変換装置
TW359024B (en) * 1996-05-28 1999-05-21 Winbond Electronics Corp Stage silicon control rectifier protection circuit and the structure
US6621126B2 (en) * 2000-10-10 2003-09-16 Sarnoff Corporation Multifinger silicon controlled rectifier structure for electrostatic discharge protection
EP1368875A1 (fr) * 2001-03-16 2003-12-10 Sarnoff Corporation Structures de protection contre les decharges electrostatiques a courant de maintien eleve pour eviter les declenchements parasites
US6952335B2 (en) * 2002-03-22 2005-10-04 Virginia Tech Intellectual Properties, Inc. Solid-state DC circuit breaker
FR2838881B1 (fr) * 2002-04-22 2004-07-09 St Microelectronics Sa Dispositif de protection contre des decharges electrostatiques comprenant plusieurs thyristors
WO2006014515A2 (fr) * 2004-07-07 2006-02-09 Sarnoff Corporation Redresseur bidimensionnel commande au silicium
JP2006186249A (ja) 2004-12-28 2006-07-13 Toshiba Corp 半導体装置
DE102006022105B4 (de) * 2006-05-11 2012-03-08 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
TWI496272B (zh) * 2006-09-29 2015-08-11 Fairchild Semiconductor 用於功率金氧半導體場效電晶體之雙電壓多晶矽二極體靜電放電電路
US7706157B2 (en) * 2007-12-05 2010-04-27 General Electric Company Systems and methods involving balancing currents for thyristors
FR2934710B1 (fr) * 2008-08-04 2010-09-10 St Microelectronics Sa Circuit de protection d'un circuit integre contre des decharges electrostatiques en technologie cmos.
EP2246885A1 (fr) * 2009-04-27 2010-11-03 STmicroelectronics SA Structure de protection d'un circuit intégré contre des décharges électrostatiques
EP2290691A1 (fr) 2009-08-24 2011-03-02 STmicroelectronics SA Structure de protection d'un circuit intégré contre des décharges électrostatiques
FR2975224B1 (fr) 2011-05-12 2013-07-26 St Microelectronics Sa Dispositif de protection haute performance contre des decharges electrostatiques

Also Published As

Publication number Publication date
CN102779817A (zh) 2012-11-14
CN102779817B (zh) 2016-10-05
FR2975224A1 (fr) 2012-11-16
US20160218098A1 (en) 2016-07-28
US20120286321A1 (en) 2012-11-15
US9455247B2 (en) 2016-09-27
US9324703B2 (en) 2016-04-26
CN202678313U (zh) 2013-01-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150130