FR2972461B1 - Procede de fabrication de nanoparticules semi-conductrices - Google Patents

Procede de fabrication de nanoparticules semi-conductrices Download PDF

Info

Publication number
FR2972461B1
FR2972461B1 FR1151926A FR1151926A FR2972461B1 FR 2972461 B1 FR2972461 B1 FR 2972461B1 FR 1151926 A FR1151926 A FR 1151926A FR 1151926 A FR1151926 A FR 1151926A FR 2972461 B1 FR2972461 B1 FR 2972461B1
Authority
FR
France
Prior art keywords
semi
manufacturing process
conductive nanoparticle
nanoparticle manufacturing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1151926A
Other languages
English (en)
French (fr)
Other versions
FR2972461A1 (fr
Inventor
Mahdi Medjaoui
Volodymyr Lysenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Institut National des Sciences Appliquees de Lyon
Original Assignee
Centre National de la Recherche Scientifique CNRS
Institut National des Sciences Appliquees de Lyon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1151926A priority Critical patent/FR2972461B1/fr
Application filed by Centre National de la Recherche Scientifique CNRS, Institut National des Sciences Appliquees de Lyon filed Critical Centre National de la Recherche Scientifique CNRS
Priority to CN201280022365.3A priority patent/CN103635612B/zh
Priority to US14/004,018 priority patent/US9352969B2/en
Priority to JP2013557113A priority patent/JP6117118B2/ja
Priority to EP12707779.0A priority patent/EP2683856B1/fr
Priority to CA2829147A priority patent/CA2829147C/en
Priority to PCT/EP2012/054124 priority patent/WO2012120117A1/fr
Publication of FR2972461A1 publication Critical patent/FR2972461A1/fr
Application granted granted Critical
Publication of FR2972461B1 publication Critical patent/FR2972461B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen; Reversible storage of hydrogen
    • C01B3/02—Production of hydrogen; Production of gaseous mixtures containing hydrogen
    • C01B3/06—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents
    • C01B3/08—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents by reaction of inorganic compounds with metals
    • C01B3/10—Production of hydrogen; Production of gaseous mixtures containing hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen with inorganic reducing agents by reaction of inorganic compounds with metals by reaction of water vapour with metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Composite Materials (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
FR1151926A 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices Active FR2972461B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1151926A FR2972461B1 (fr) 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices
US14/004,018 US9352969B2 (en) 2011-03-09 2012-03-09 Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon
JP2013557113A JP6117118B2 (ja) 2011-03-09 2012-03-09 シリコン系ナノ粉末から水素を生成する方法
EP12707779.0A EP2683856B1 (fr) 2011-03-09 2012-03-09 Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore
CN201280022365.3A CN103635612B (zh) 2011-03-09 2012-03-09 由冶金级硅或精炼冶金级硅制造基于硅的纳米颗粒的方法
CA2829147A CA2829147C (en) 2011-03-09 2012-03-09 Process for manufacturing silicon-based nanoparticles from metallurgical-grade silicon or refined metallurgical-grade silicon
PCT/EP2012/054124 WO2012120117A1 (fr) 2011-03-09 2012-03-09 Procede de fabrication de nanoparticules a base de silicium a partir de silicium de grade metallurgique ou de grade metallurgique ameliore

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1151926A FR2972461B1 (fr) 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices

Publications (2)

Publication Number Publication Date
FR2972461A1 FR2972461A1 (fr) 2012-09-14
FR2972461B1 true FR2972461B1 (fr) 2021-01-01

Family

ID=45811514

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1151926A Active FR2972461B1 (fr) 2011-03-09 2011-03-09 Procede de fabrication de nanoparticules semi-conductrices

Country Status (7)

Country Link
US (1) US9352969B2 (https=)
EP (1) EP2683856B1 (https=)
JP (1) JP6117118B2 (https=)
CN (1) CN103635612B (https=)
CA (1) CA2829147C (https=)
FR (1) FR2972461B1 (https=)
WO (1) WO2012120117A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017112772A1 (en) * 2015-12-21 2017-06-29 William Marsh Rice University Electrochemical etching of multiple silicon materials
DE102017000623A1 (de) 2016-09-29 2018-03-29 Renate Fleuren Arbeitssicherheitsgerüst
JP6924918B1 (ja) * 2020-04-02 2021-08-25 株式会社ボスケシリコン 酸化ストレス抑制剤及び抗酸化剤
CN115397773A (zh) * 2020-04-02 2022-11-25 博斯凯矽剂科技株式会社 复合材料
CN116008368B (zh) * 2022-03-30 2024-12-20 武汉维尔博生物科技有限公司 金电极、非酶葡萄糖传感器及其构筑方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
JPH0459601A (ja) * 1990-06-26 1992-02-26 Asahi Chem Ind Co Ltd 水素の製造方法
US5208001A (en) * 1991-06-20 1993-05-04 Texas Instruments Incorporated Method for silicon purification
US5445718A (en) * 1994-01-24 1995-08-29 General Motors Corporation Electrochemical etch-stop on n-type silicon by injecting holes from a shallow p-type layer
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
DE59803645D1 (de) * 1997-07-28 2002-05-08 Nft Nano Filtertechnik Gmbh Verfahren zur herstellung eines filters
US6743406B2 (en) 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6992298B2 (en) 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
JP2004115349A (ja) * 2002-09-30 2004-04-15 Honda Motor Co Ltd 水素発生方法
JP2004307328A (ja) * 2003-03-25 2004-11-04 Sanyo Electric Co Ltd 水素製造方法、水素製造装置およびこれを備えた発動機
FR2858313B1 (fr) * 2003-07-28 2005-12-16 Centre Nat Rech Scient Reservoir d'hydrogene a base de nano-structures de silicium
US20070202029A1 (en) * 2003-12-04 2007-08-30 Gary Burns Method Of Removing Impurities From Metallurgical Grade Silicon To Produce Solar Grade Silicon
JP2005285380A (ja) * 2004-03-26 2005-10-13 Quantum 14:Kk ダイオード素子およびそれを用いた装置
WO2007004014A2 (en) * 2005-06-30 2007-01-11 University Of Cape Town Semiconducting nanoparticles with surface modification
GB0515353D0 (en) 2005-07-27 2005-08-31 Psimedica Ltd Food
JP4837465B2 (ja) * 2006-07-11 2011-12-14 日揮触媒化成株式会社 シリコン微粒子含有液の製造方法およびシリコン微粒子の製造方法
US8920625B2 (en) * 2007-04-27 2014-12-30 Board Of Regents Of The University Of Texas System Electrochemical method of making porous particles using a constant current density
CN101815504B (zh) * 2007-07-10 2013-11-20 加利福尼亚大学董事会 用于向所选择组织递送组合物的材料和方法
GB0713898D0 (en) * 2007-07-17 2007-08-29 Nexeon Ltd A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries

Also Published As

Publication number Publication date
CA2829147C (en) 2019-04-30
US20130341234A1 (en) 2013-12-26
CN103635612A (zh) 2014-03-12
CA2829147A1 (en) 2012-09-13
EP2683856A1 (fr) 2014-01-15
EP2683856B1 (fr) 2017-08-09
FR2972461A1 (fr) 2012-09-14
JP2014518535A (ja) 2014-07-31
WO2012120117A1 (fr) 2012-09-13
CN103635612B (zh) 2017-07-11
US9352969B2 (en) 2016-05-31
JP6117118B2 (ja) 2017-04-19

Similar Documents

Publication Publication Date Title
PH12023050502A1 (en) Semiconductor die singulation method
ATE445912T1 (de) Solarzellenmarkierverfahren und solarzelle
EP1984545A4 (en) PROCESS FOR THE GROWTH OF SEMIPOLARS (AL, IN, GA, B) N OPTOELECTRONIC COMPONENTS
FR2984599B1 (fr) Procede de fabrication d'un micro- ou nano- fil semiconducteur, structure semiconductrice comportant un tel micro- ou nano- fil et procede de fabrication d'une structure semiconductrice
TW201614803A (en) Device having multiple transistors and method for fabricating the same
WO2012154498A3 (en) Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
EP2590233A3 (en) Photovoltaic device and method of manufacturing the same
WO2012057512A3 (ko) 화합물 반도체 장치 및 그 제조 방법
FR2972461B1 (fr) Procede de fabrication de nanoparticules semi-conductrices
WO2011025149A3 (ko) 반도체 기판 제조 방법 및 발광 소자 제조 방법
GB2505802A (en) Secondary device integration into coreless microelectronic device packages
TW200802985A (en) Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same
FR2982422B1 (fr) Substrat conducteur pour cellule photovoltaique
TW200715380A (en) Process for lateral disjonting of a semiconductor wafer and opto-electronic element
GB2514711A (en) Power semiconductor device and method for manufacturing thereof
EP2626905A3 (en) Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device
GB2509851A (en) Organic electronic device and method of manufacture
EP2696366A3 (en) Device having reduced bias temperature instability (bti)
WO2013027041A3 (en) A semiconductor laser device and a method for manufacturing a semiconductor laser device
EP2369604A3 (en) Organic photoelectric semiconductor device and method for fabricating the same
EP2584593A4 (en) METHOD FOR FORMING A SILICON OXYNITRIDE FILM AND THE SUBSTRATE PRODUCED IN THIS PROCESS WITH THE SILICON OXYNITRIDE FILM
WO2010091245A8 (en) Scribe-line through silicon vias
WO2012105800A3 (ko) 나노전력발전소자 및 이의 제조방법
TW201130027A (en) Semiconductor die singulation method
EP3480843A4 (en) METHOD FOR PRODUCING A HOUSING SUBSTRATE FOR A SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING A SUBSTRATE WITH A MOUNTED SEMICONDUCTOR ELEMENT

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16