FR2914500A1 - Dispositif electronique a contact ohmique ameliore - Google Patents
Dispositif electronique a contact ohmique ameliore Download PDFInfo
- Publication number
- FR2914500A1 FR2914500A1 FR0754186A FR0754186A FR2914500A1 FR 2914500 A1 FR2914500 A1 FR 2914500A1 FR 0754186 A FR0754186 A FR 0754186A FR 0754186 A FR0754186 A FR 0754186A FR 2914500 A1 FR2914500 A1 FR 2914500A1
- Authority
- FR
- France
- Prior art keywords
- layer
- barrier layer
- contact region
- metal
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims abstract description 108
- 239000002184 metal Substances 0.000 claims abstract description 108
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 150000002739 metals Chemical class 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 272
- 239000000463 material Substances 0.000 claims description 48
- 238000000137 annealing Methods 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000002344 surface layer Substances 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 22
- 238000002513 implantation Methods 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910002059 quaternary alloy Inorganic materials 0.000 description 3
- 230000008521 reorganization Effects 0.000 description 3
- 229910002058 ternary alloy Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010063493 Premature ageing Diseases 0.000 description 1
- 208000032038 Premature aging Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (3)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0754186A FR2914500B1 (fr) | 2007-03-30 | 2007-03-30 | Dispositif electronique a contact ohmique ameliore |
JP2010500381A JP2010524202A (ja) | 2007-03-30 | 2008-03-25 | 改善オーム接触を有する電子デバイス |
PCT/IB2008/000788 WO2008120094A2 (fr) | 2007-03-30 | 2008-03-25 | Dispositif électronique avec contact ohmique optimisé |
CN2008800106418A CN101663759B (zh) | 2007-03-30 | 2008-03-25 | 具有改进的欧姆接触的电子器件及制造方法 |
KR1020097017720A KR20090128393A (ko) | 2007-03-30 | 2008-03-25 | 향상된 옴 접촉을 갖는 전자 장치 |
EP08719403A EP2143142A2 (fr) | 2007-03-30 | 2008-03-25 | Dispositif électronique avec contact ohmique optimisé |
US12/564,119 US7968390B2 (en) | 2007-03-30 | 2009-09-22 | Electronic devices with improved ohmic contact |
US13/108,944 US8253170B2 (en) | 2007-03-30 | 2011-05-16 | Electronic devices with improved OHMIC contact |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0754186A FR2914500B1 (fr) | 2007-03-30 | 2007-03-30 | Dispositif electronique a contact ohmique ameliore |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2914500A1 true FR2914500A1 (fr) | 2008-10-03 |
FR2914500B1 FR2914500B1 (fr) | 2009-11-20 |
Family
ID=38474161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0754186A Active FR2914500B1 (fr) | 2007-03-30 | 2007-03-30 | Dispositif electronique a contact ohmique ameliore |
Country Status (7)
Country | Link |
---|---|
US (2) | US7968390B2 (fr) |
EP (1) | EP2143142A2 (fr) |
JP (1) | JP2010524202A (fr) |
KR (1) | KR20090128393A (fr) |
CN (1) | CN101663759B (fr) |
FR (1) | FR2914500B1 (fr) |
WO (1) | WO2008120094A2 (fr) |
Families Citing this family (46)
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US7915643B2 (en) | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
JP5453786B2 (ja) * | 2008-12-02 | 2014-03-26 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタおよびその製造方法 |
US7898004B2 (en) * | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
JP2011054809A (ja) * | 2009-09-03 | 2011-03-17 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
US8389977B2 (en) | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
JP5056883B2 (ja) * | 2010-03-26 | 2012-10-24 | サンケン電気株式会社 | 半導体装置 |
US8742460B2 (en) | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
TWI441303B (zh) * | 2011-06-10 | 2014-06-11 | Univ Nat Chiao Tung | 適用於銅製程的半導體裝置 |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
KR101890749B1 (ko) * | 2011-10-27 | 2018-08-23 | 삼성전자주식회사 | 전극구조체, 이를 포함하는 질화갈륨계 반도체소자 및 이들의 제조방법 |
US8569799B2 (en) * | 2011-12-20 | 2013-10-29 | Infineon Technologies Austria Ag | III-V semiconductor devices with buried contacts |
KR101883842B1 (ko) | 2011-12-26 | 2018-08-01 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 조명시스템 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
JP5750382B2 (ja) * | 2012-02-15 | 2015-07-22 | シャープ株式会社 | 窒化物半導体装置 |
WO2013155108A1 (fr) | 2012-04-09 | 2013-10-17 | Transphorm Inc. | Transistors au nitrure-iii n-polaires |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
WO2014127150A1 (fr) | 2013-02-15 | 2014-08-21 | Transphorm Inc. | Électrodes pour dispositifs à semi-conducteurs et leurs procédés de fabrication |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245993B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
WO2015009514A1 (fr) | 2013-07-19 | 2015-01-22 | Transphorm Inc. | Transistor au nitrure iii comprenant une couche d'appauvrissement de type p |
JP6135487B2 (ja) * | 2013-12-09 | 2017-05-31 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
CN104465746B (zh) * | 2014-09-28 | 2018-08-10 | 苏州能讯高能半导体有限公司 | 一种hemt器件及其制造方法 |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US10283631B2 (en) * | 2015-05-12 | 2019-05-07 | Delta Electronics, Inc. | Semiconductor device and method of fabricating the same |
US20170069723A1 (en) * | 2015-09-08 | 2017-03-09 | M/A-Com Technology Solutions Holdings, Inc. | Iii-nitride semiconductor structures comprising multiple spatially patterned implanted species |
US11322599B2 (en) | 2016-01-15 | 2022-05-03 | Transphorm Technology, Inc. | Enhancement mode III-nitride devices having an Al1-xSixO gate insulator |
US10224401B2 (en) | 2016-05-31 | 2019-03-05 | Transphorm Inc. | III-nitride devices including a graded depleting layer |
US10096550B2 (en) | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
US10224285B2 (en) | 2017-02-21 | 2019-03-05 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
WO2019037116A1 (fr) * | 2017-08-25 | 2019-02-28 | 苏州晶湛半导体有限公司 | Procédé de fabrication de semi-conducteur de type p, dispositif de type enrichissement et procédé de fabrication associé |
JP2021120966A (ja) * | 2018-04-27 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | スイッチングトランジスタ及び半導体モジュール |
KR102528076B1 (ko) * | 2018-10-30 | 2023-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 응용들을 위한 구조를 식각하기 위한 방법들 |
CN111128709A (zh) * | 2020-01-15 | 2020-05-08 | 桂林理工大学 | 基于Cu的GaN HEMT无金欧姆接触电极的制备方法 |
CN115498027A (zh) * | 2022-09-23 | 2022-12-20 | 晋芯电子制造(山西)有限公司 | 一种集成电路欧姆接触区的生产系统及生产方法 |
Citations (6)
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EP0093971A2 (fr) * | 1982-04-28 | 1983-11-16 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur comprenant une couche intermédiaire d'un élément de transition et procédé pour le fabriquer |
EP0493797A2 (fr) * | 1990-12-31 | 1992-07-08 | Honeywell Inc. | Circuit intégré métal-isolant-semiconducteur à hétérostructure de GaAs et sa méthode de fabrication |
GB2275569A (en) * | 1993-02-24 | 1994-08-31 | Toshiba Cambridge Res Center | Making contact to semiconductor heterojunction devices |
US5646069A (en) * | 1995-06-07 | 1997-07-08 | Hughes Aircraft Company | Fabrication process for Alx In1-x As/Gay In1-y As power HFET ohmic contacts |
US6121153A (en) * | 1994-08-29 | 2000-09-19 | Fujitsu Limited | Semiconductor device having a regrowth crystal region |
WO2006033167A1 (fr) * | 2004-09-24 | 2006-03-30 | Kabushiki Kaisha Toshiba | Title: dispositif a semi-conducteur |
Family Cites Families (9)
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---|---|---|---|---|
US4186410A (en) * | 1978-06-27 | 1980-01-29 | Bell Telephone Laboratories, Incorporated | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors |
JPS6467964A (en) * | 1987-09-08 | 1989-03-14 | Mitsubishi Electric Corp | Multilayer electrode structure |
JP2967743B2 (ja) * | 1997-01-14 | 1999-10-25 | 日本電気株式会社 | n型窒化ガリウム系半導体のコンタクト電極及びその形成方法 |
JP3177951B2 (ja) * | 1997-09-29 | 2001-06-18 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
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US7432142B2 (en) * | 2004-05-20 | 2008-10-07 | Cree, Inc. | Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
JP2007165446A (ja) * | 2005-12-12 | 2007-06-28 | Oki Electric Ind Co Ltd | 半導体素子のオーミックコンタクト構造 |
US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
US7501670B2 (en) * | 2007-03-20 | 2009-03-10 | Velox Semiconductor Corporation | Cascode circuit employing a depletion-mode, GaN-based FET |
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2007
- 2007-03-30 FR FR0754186A patent/FR2914500B1/fr active Active
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2008
- 2008-03-25 JP JP2010500381A patent/JP2010524202A/ja not_active Withdrawn
- 2008-03-25 KR KR1020097017720A patent/KR20090128393A/ko not_active Application Discontinuation
- 2008-03-25 WO PCT/IB2008/000788 patent/WO2008120094A2/fr active Application Filing
- 2008-03-25 CN CN2008800106418A patent/CN101663759B/zh active Active
- 2008-03-25 EP EP08719403A patent/EP2143142A2/fr not_active Withdrawn
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2009
- 2009-09-22 US US12/564,119 patent/US7968390B2/en active Active
-
2011
- 2011-05-16 US US13/108,944 patent/US8253170B2/en active Active
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EP0093971A2 (fr) * | 1982-04-28 | 1983-11-16 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur comprenant une couche intermédiaire d'un élément de transition et procédé pour le fabriquer |
EP0493797A2 (fr) * | 1990-12-31 | 1992-07-08 | Honeywell Inc. | Circuit intégré métal-isolant-semiconducteur à hétérostructure de GaAs et sa méthode de fabrication |
GB2275569A (en) * | 1993-02-24 | 1994-08-31 | Toshiba Cambridge Res Center | Making contact to semiconductor heterojunction devices |
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WO2006033167A1 (fr) * | 2004-09-24 | 2006-03-30 | Kabushiki Kaisha Toshiba | Title: dispositif a semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
WO2008120094A2 (fr) | 2008-10-09 |
KR20090128393A (ko) | 2009-12-15 |
CN101663759B (zh) | 2011-09-14 |
EP2143142A2 (fr) | 2010-01-13 |
US8253170B2 (en) | 2012-08-28 |
CN101663759A (zh) | 2010-03-03 |
WO2008120094A3 (fr) | 2008-12-04 |
WO2008120094A9 (fr) | 2009-09-17 |
US20100038682A1 (en) | 2010-02-18 |
US7968390B2 (en) | 2011-06-28 |
JP2010524202A (ja) | 2010-07-15 |
FR2914500B1 (fr) | 2009-11-20 |
US20110215380A1 (en) | 2011-09-08 |
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