FR2887364B1 - Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante - Google Patents
Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisanteInfo
- Publication number
- FR2887364B1 FR2887364B1 FR0551663A FR0551663A FR2887364B1 FR 2887364 B1 FR2887364 B1 FR 2887364B1 FR 0551663 A FR0551663 A FR 0551663A FR 0551663 A FR0551663 A FR 0551663A FR 2887364 B1 FR2887364 B1 FR 2887364B1
- Authority
- FR
- France
- Prior art keywords
- passage
- integrated circuit
- ionizing radiation
- short circuits
- protects against
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005865 ionizing radiation Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0551663A FR2887364B1 (fr) | 2005-06-17 | 2005-06-17 | Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante |
US11/922,189 US7778001B2 (en) | 2005-06-17 | 2006-06-16 | Integrated circuit protected against short circuits and operating errors following the passage on an ionizing radiation |
PCT/FR2006/050567 WO2006134308A2 (fr) | 2005-06-17 | 2006-06-16 | Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0551663A FR2887364B1 (fr) | 2005-06-17 | 2005-06-17 | Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2887364A1 FR2887364A1 (fr) | 2006-12-22 |
FR2887364B1 true FR2887364B1 (fr) | 2007-09-21 |
Family
ID=35825344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0551663A Active FR2887364B1 (fr) | 2005-06-17 | 2005-06-17 | Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante |
Country Status (3)
Country | Link |
---|---|
US (1) | US7778001B2 (fr) |
FR (1) | FR2887364B1 (fr) |
WO (1) | WO2006134308A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8685800B2 (en) | 2012-07-27 | 2014-04-01 | Freescale Semiconductor, Inc. | Single event latch-up prevention techniques for a semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5361033A (en) * | 1991-07-25 | 1994-11-01 | Texas Instruments Incorporated | On chip bi-stable power-spike detection circuit |
JPH10269800A (ja) * | 1997-03-27 | 1998-10-09 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6678202B2 (en) * | 2000-12-22 | 2004-01-13 | Texas Instruments Incorporated | Reduced standby power memory array and method |
US6735110B1 (en) * | 2002-04-17 | 2004-05-11 | Xilinx, Inc. | Memory cells enhanced for resistance to single event upset |
-
2005
- 2005-06-17 FR FR0551663A patent/FR2887364B1/fr active Active
-
2006
- 2006-06-16 WO PCT/FR2006/050567 patent/WO2006134308A2/fr active Application Filing
- 2006-06-16 US US11/922,189 patent/US7778001B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2006134308A2 (fr) | 2006-12-21 |
US20090128975A1 (en) | 2009-05-21 |
WO2006134308A3 (fr) | 2007-03-01 |
FR2887364A1 (fr) | 2006-12-22 |
US7778001B2 (en) | 2010-08-17 |
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Legal Events
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