FR2887364B1 - Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante - Google Patents

Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante

Info

Publication number
FR2887364B1
FR2887364B1 FR0551663A FR0551663A FR2887364B1 FR 2887364 B1 FR2887364 B1 FR 2887364B1 FR 0551663 A FR0551663 A FR 0551663A FR 0551663 A FR0551663 A FR 0551663A FR 2887364 B1 FR2887364 B1 FR 2887364B1
Authority
FR
France
Prior art keywords
passage
integrated circuit
ionizing radiation
short circuits
protects against
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0551663A
Other languages
English (en)
Other versions
FR2887364A1 (fr
Inventor
Michael Nicolaidis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iroc Technologies SA
Original Assignee
Iroc Technologies SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iroc Technologies SA filed Critical Iroc Technologies SA
Priority to FR0551663A priority Critical patent/FR2887364B1/fr
Priority to PCT/FR2006/050567 priority patent/WO2006134308A2/fr
Priority to US11/922,189 priority patent/US7778001B2/en
Publication of FR2887364A1 publication Critical patent/FR2887364A1/fr
Application granted granted Critical
Publication of FR2887364B1 publication Critical patent/FR2887364B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125—Cells incorporating circuit means for protecting against loss of information

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0551663A 2005-06-17 2005-06-17 Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante Active FR2887364B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0551663A FR2887364B1 (fr) 2005-06-17 2005-06-17 Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante
PCT/FR2006/050567 WO2006134308A2 (fr) 2005-06-17 2006-06-16 Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante
US11/922,189 US7778001B2 (en) 2005-06-17 2006-06-16 Integrated circuit protected against short circuits and operating errors following the passage on an ionizing radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0551663A FR2887364B1 (fr) 2005-06-17 2005-06-17 Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante

Publications (2)

Publication Number Publication Date
FR2887364A1 FR2887364A1 (fr) 2006-12-22
FR2887364B1 true FR2887364B1 (fr) 2007-09-21

Family

ID=35825344

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0551663A Active FR2887364B1 (fr) 2005-06-17 2005-06-17 Circuit integre protege contre les courts-circuits et les erreurs de fonctionnement suite au passage d'une radiation ionisante

Country Status (3)

Country Link
US (1) US7778001B2 (fr)
FR (1) FR2887364B1 (fr)
WO (1) WO2006134308A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8685800B2 (en) 2012-07-27 2014-04-01 Freescale Semiconductor, Inc. Single event latch-up prevention techniques for a semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5361033A (en) * 1991-07-25 1994-11-01 Texas Instruments Incorporated On chip bi-stable power-spike detection circuit
JPH10269800A (ja) * 1997-03-27 1998-10-09 Mitsubishi Electric Corp 半導体記憶装置
US6678202B2 (en) * 2000-12-22 2004-01-13 Texas Instruments Incorporated Reduced standby power memory array and method
US6735110B1 (en) * 2002-04-17 2004-05-11 Xilinx, Inc. Memory cells enhanced for resistance to single event upset

Also Published As

Publication number Publication date
WO2006134308A2 (fr) 2006-12-21
US7778001B2 (en) 2010-08-17
FR2887364A1 (fr) 2006-12-22
US20090128975A1 (en) 2009-05-21
WO2006134308A3 (fr) 2007-03-01

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