FR2862802B1 - Support de stockage d'information et procede de fabrication - Google Patents

Support de stockage d'information et procede de fabrication

Info

Publication number
FR2862802B1
FR2862802B1 FR0412418A FR0412418A FR2862802B1 FR 2862802 B1 FR2862802 B1 FR 2862802B1 FR 0412418 A FR0412418 A FR 0412418A FR 0412418 A FR0412418 A FR 0412418A FR 2862802 B1 FR2862802 B1 FR 2862802B1
Authority
FR
France
Prior art keywords
manufacture
storage medium
information storage
information
medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0412418A
Other languages
English (en)
Other versions
FR2862802A1 (fr
Inventor
Ju Hwan Jung
Seung Bum Hong
Hong Sik Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2862802A1 publication Critical patent/FR2862802A1/fr
Application granted granted Critical
Publication of FR2862802B1 publication Critical patent/FR2862802B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
FR0412418A 2003-11-24 2004-11-23 Support de stockage d'information et procede de fabrication Expired - Fee Related FR2862802B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030083616A KR100552701B1 (ko) 2003-11-24 2003-11-24 전하-쌍극자가 결합된 정보 저장 매체 및 그 제조 방법

Publications (2)

Publication Number Publication Date
FR2862802A1 FR2862802A1 (fr) 2005-05-27
FR2862802B1 true FR2862802B1 (fr) 2007-09-07

Family

ID=34545872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0412418A Expired - Fee Related FR2862802B1 (fr) 2003-11-24 2004-11-23 Support de stockage d'information et procede de fabrication

Country Status (5)

Country Link
US (1) US7888718B2 (fr)
JP (1) JP4381964B2 (fr)
KR (1) KR100552701B1 (fr)
DE (1) DE102004054789A1 (fr)
FR (1) FR2862802B1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445122B2 (en) 2007-12-21 2013-05-21 Commissariat A L 'energie Atomique Data storage medium and associated method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4586180B2 (ja) * 2005-05-02 2010-11-24 独立行政法人情報通信研究機構 情報再生装置及び方法
KR100715123B1 (ko) * 2005-07-04 2007-05-10 전자부품연구원 탐침형 정보저장장치의 기록매체 및 기록/재생/소거 방법
KR100718154B1 (ko) 2006-02-20 2007-05-14 삼성전자주식회사 정보 미디어 및 이를 이용하는 정보의 기록 및 재생 장치
KR100842897B1 (ko) * 2007-01-29 2008-07-03 삼성전자주식회사 강유전체 하드디스크드라이브용 강유전체 미디어 구조 및그 제조 방법
KR100859587B1 (ko) * 2007-03-07 2008-09-23 삼성전자주식회사 강유전체 기록매체 및 그의 제조 방법과 이를 이용한정보저장장치
GB0809840D0 (en) * 2008-05-30 2008-07-09 Univ Catholique Louvain Ferroelectric organic memories with ultra-low voltage operation
KR101042519B1 (ko) * 2008-12-30 2011-06-20 한국과학기술원 멀티 비트 저장 가능한 메모리 장치

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Publication number Priority date Publication date Assignee Title
JP3286181B2 (ja) 1995-11-17 2002-05-27 ティーディーケイ株式会社 記録媒体およびその製造方法ならびに情報処理装置
US5985404A (en) * 1996-08-28 1999-11-16 Tdk Corporation Recording medium, method of making, and information processing apparatus
US5739066A (en) * 1996-09-17 1998-04-14 Micron Technology, Inc. Semiconductor processing methods of forming a conductive gate and line
US6096597A (en) * 1997-01-31 2000-08-01 Texas Instruments Incorporated Method for fabricating an integrated circuit structure
FR2786005B1 (fr) * 1998-11-17 2002-04-12 Commissariat Energie Atomique Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques
US6399521B1 (en) * 1999-05-21 2002-06-04 Sharp Laboratories Of America, Inc. Composite iridium barrier structure with oxidized refractory metal companion barrier and method for same
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6172907B1 (en) * 1999-10-22 2001-01-09 Cypress Semiconductor Corporation Silicon-oxide-nitride-oxide-semiconductor (SONOS) type memory cell and method for retaining data in the same
KR100379415B1 (ko) 2000-01-13 2003-04-10 엘지전자 주식회사 강유전체 기록 매체 및 그 제조 방법
US6507552B2 (en) * 2000-12-01 2003-01-14 Hewlett-Packard Company AFM version of diode-and cathodoconductivity-and cathodoluminescence-based data storage media
US6495413B2 (en) * 2001-02-28 2002-12-17 Ramtron International Corporation Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits
US20030025148A1 (en) * 2001-05-04 2003-02-06 Jung-Yu Hsieh Structure of a flash memory
KR100438832B1 (ko) 2001-11-23 2004-07-05 삼성전자주식회사 반도체 탐침을 이용한 정보 저장 장치
KR100438833B1 (ko) 2001-12-06 2004-07-05 삼성전자주식회사 전하를 이용한 정보저장장치
JP4308485B2 (ja) * 2002-07-08 2009-08-05 パナソニック株式会社 容量素子の製造方法
US6800890B1 (en) * 2002-12-30 2004-10-05 Infineon Technologies Aktiengesellschaft Memory architecture with series grouped by cells
US6919233B2 (en) * 2002-12-31 2005-07-19 Texas Instruments Incorporated MIM capacitors and methods for fabricating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445122B2 (en) 2007-12-21 2013-05-21 Commissariat A L 'energie Atomique Data storage medium and associated method

Also Published As

Publication number Publication date
US7888718B2 (en) 2011-02-15
JP2005158248A (ja) 2005-06-16
KR20050049860A (ko) 2005-05-27
US20050133841A1 (en) 2005-06-23
JP4381964B2 (ja) 2009-12-09
DE102004054789A1 (de) 2005-06-23
KR100552701B1 (ko) 2006-02-20
FR2862802A1 (fr) 2005-05-27

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Legal Events

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Effective date: 20150731