FR2852735B1 - Structure sonos locale pour memoire non volatile a semiconducteur et procede de fabrication - Google Patents

Structure sonos locale pour memoire non volatile a semiconducteur et procede de fabrication

Info

Publication number
FR2852735B1
FR2852735B1 FR0400051A FR0400051A FR2852735B1 FR 2852735 B1 FR2852735 B1 FR 2852735B1 FR 0400051 A FR0400051 A FR 0400051A FR 0400051 A FR0400051 A FR 0400051A FR 2852735 B1 FR2852735 B1 FR 2852735B1
Authority
FR
France
Prior art keywords
gate
semiconductor memory
volatile semiconductor
manufacturing
sonos structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0400051A
Other languages
English (en)
Other versions
FR2852735A1 (fr
Inventor
Geum Jong Bae
Nae In Lee
Sang Su Kim
Ki Chul Kim
Jin Hee Kim
In Wook Cho
Sung Ho Kim
Kwang Wook Koh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2852735A1 publication Critical patent/FR2852735A1/fr
Application granted granted Critical
Publication of FR2852735B1 publication Critical patent/FR2852735B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/954—Making oxide-nitride-oxide device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

Une structure SONOS locale ayant une grille en deux parties et une structure ONO auto-alignée comprend : un substrat (1002); une structure ONO (1030) sur le substrat; une première couche de grille (1032) sur la structure ONO et en alignement avec celle-ci; un isolant de grille (1023) sur le substrat à côté de la structure ONO; et une seconde couche de grille (1034) sur la première couche de grille (1032) et sur l'isolant de grille (1023). Les première et seconde couches de grille (1032, 1034) sont connectées électriquement ensemble. La structure ONO (1030) et les première et seconde couches de grille (1032, 1034) définissent ensemble une structure SONOS locale à au moins 1 bit pour un dispositif de mémoire non volatile à semiconducteur.
FR0400051A 2003-03-17 2004-01-06 Structure sonos locale pour memoire non volatile a semiconducteur et procede de fabrication Expired - Fee Related FR2852735B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/388,631 US6815764B2 (en) 2003-03-17 2003-03-17 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

Publications (2)

Publication Number Publication Date
FR2852735A1 FR2852735A1 (fr) 2004-09-24
FR2852735B1 true FR2852735B1 (fr) 2006-09-22

Family

ID=32927304

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0400051A Expired - Fee Related FR2852735B1 (fr) 2003-03-17 2004-01-06 Structure sonos locale pour memoire non volatile a semiconducteur et procede de fabrication

Country Status (5)

Country Link
US (2) US6815764B2 (fr)
JP (1) JP4445273B2 (fr)
KR (1) KR100546353B1 (fr)
CN (1) CN1326245C (fr)
FR (1) FR2852735B1 (fr)

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US7759719B2 (en) 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
US7550800B2 (en) * 2003-06-06 2009-06-23 Chih-Hsin Wang Method and apparatus transporting charges in semiconductor device and semiconductor memory device
US7613041B2 (en) 2003-06-06 2009-11-03 Chih-Hsin Wang Methods for operating semiconductor device and semiconductor memory device
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US7391652B2 (en) * 2006-05-05 2008-06-24 Macronix International Co., Ltd. Method of programming and erasing a p-channel BE-SONOS NAND flash memory
US7907450B2 (en) 2006-05-08 2011-03-15 Macronix International Co., Ltd. Methods and apparatus for implementing bit-by-bit erase of a flash memory device
US7414889B2 (en) * 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
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Also Published As

Publication number Publication date
US7060563B2 (en) 2006-06-13
US20050048702A1 (en) 2005-03-03
CN1531095A (zh) 2004-09-22
FR2852735A1 (fr) 2004-09-24
US6815764B2 (en) 2004-11-09
US20040183126A1 (en) 2004-09-23
JP4445273B2 (ja) 2010-04-07
CN1326245C (zh) 2007-07-11
KR20040082019A (ko) 2004-09-23
KR100546353B1 (ko) 2006-01-26
JP2004282029A (ja) 2004-10-07

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