FR2849536B1 - Circuit d'interface de fourniture de tension - Google Patents

Circuit d'interface de fourniture de tension

Info

Publication number
FR2849536B1
FR2849536B1 FR0216808A FR0216808A FR2849536B1 FR 2849536 B1 FR2849536 B1 FR 2849536B1 FR 0216808 A FR0216808 A FR 0216808A FR 0216808 A FR0216808 A FR 0216808A FR 2849536 B1 FR2849536 B1 FR 2849536B1
Authority
FR
France
Prior art keywords
interface circuit
voltage supply
supply interface
voltage
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0216808A
Other languages
English (en)
Other versions
FR2849536A1 (fr
Inventor
Jerome Heurtier
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0216808A priority Critical patent/FR2849536B1/fr
Priority to US10/744,411 priority patent/US20040232969A1/en
Publication of FR2849536A1 publication Critical patent/FR2849536A1/fr
Priority to US11/518,855 priority patent/US7636006B2/en
Application granted granted Critical
Publication of FR2849536B1 publication Critical patent/FR2849536B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017545—Coupling arrangements; Impedance matching circuits
    • H03K19/017554—Coupling arrangements; Impedance matching circuits using a combination of bipolar and field effect transistors [BIFET]
FR0216808A 2002-12-27 2002-12-27 Circuit d'interface de fourniture de tension Expired - Fee Related FR2849536B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0216808A FR2849536B1 (fr) 2002-12-27 2002-12-27 Circuit d'interface de fourniture de tension
US10/744,411 US20040232969A1 (en) 2002-12-27 2003-12-23 Voltage supply interface circuit
US11/518,855 US7636006B2 (en) 2002-12-27 2006-09-11 Voltage supply interface circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0216808A FR2849536B1 (fr) 2002-12-27 2002-12-27 Circuit d'interface de fourniture de tension

Publications (2)

Publication Number Publication Date
FR2849536A1 FR2849536A1 (fr) 2004-07-02
FR2849536B1 true FR2849536B1 (fr) 2007-02-23

Family

ID=32480254

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0216808A Expired - Fee Related FR2849536B1 (fr) 2002-12-27 2002-12-27 Circuit d'interface de fourniture de tension

Country Status (2)

Country Link
US (2) US20040232969A1 (fr)
FR (1) FR2849536B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100859717B1 (ko) * 2007-05-07 2008-09-23 한국전자통신연구원 3 단자 ｍｉｔ 스위치, 그 스위치를 이용한 스위칭 시스템,및 그 스위치의 ｍｉｔ 제어방법
US9793153B2 (en) * 2011-09-20 2017-10-17 Alpha And Omega Semiconductor Incorporated Low cost and mask reduction method for high voltage devices
US20170373174A1 (en) * 2016-06-25 2017-12-28 Texas Instruments Incorporated Radiation enhanced bipolar transistor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
KR900000830B1 (ko) * 1984-06-25 1990-02-17 후지쑤 가부시끼가이샤 상보형(相補型) Bi-MIS 게이트 회로
JPS63153910A (ja) * 1986-12-17 1988-06-27 Nec Corp レベルシフト回路
JPH0197013A (ja) * 1987-10-09 1989-04-14 Hitachi Ltd 半導体回路装置
JPH0229115A (ja) * 1988-07-19 1990-01-31 Toshiba Corp 出力回路
US5204541A (en) * 1991-06-28 1993-04-20 Texas Instruments Incorporated Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
US5382916A (en) * 1991-10-30 1995-01-17 Harris Corporation Differential voltage follower
GB9222455D0 (en) * 1992-10-26 1992-12-09 Philips Electronics Uk Ltd A current sensing circuit
US5450267A (en) * 1993-03-31 1995-09-12 Texas Instruments Incorporated ESD/EOS protection circuits for integrated circuits
EP0657995B1 (fr) * 1993-12-07 1999-10-13 STMicroelectronics S.r.l. Etage de sortie à transistors de type mixte
KR0122103B1 (ko) * 1994-05-07 1997-11-26 김광호 반도체 메모리 장치의 퓨즈 소자
US6400540B1 (en) * 1999-03-12 2002-06-04 Sil.Able Inc. Clamp circuit to prevent ESD damage to an integrated circuit
JP2003177830A (ja) * 2001-12-07 2003-06-27 Mitsubishi Electric Corp 電流源回路
US6873202B1 (en) * 2003-10-20 2005-03-29 Maryland Semiconductor, Inc. Adaptive MOSFET resistor

Also Published As

Publication number Publication date
FR2849536A1 (fr) 2004-07-02
US20070176667A1 (en) 2007-08-02
US20040232969A1 (en) 2004-11-25
US7636006B2 (en) 2009-12-22

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130830