FR2839204B1 - Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre. - Google Patents

Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre.

Info

Publication number
FR2839204B1
FR2839204B1 FR0215003A FR0215003A FR2839204B1 FR 2839204 B1 FR2839204 B1 FR 2839204B1 FR 0215003 A FR0215003 A FR 0215003A FR 0215003 A FR0215003 A FR 0215003A FR 2839204 B1 FR2839204 B1 FR 2839204B1
Authority
FR
France
Prior art keywords
oxide
metal
nanometer scale
silicon device
oxide structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0215003A
Other languages
English (en)
Other versions
FR2839204A1 (fr
Inventor
Ching Fuh Lin
Wei Fang Lin
Eih Zhe Liang
Ting Wei Su
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Taiwan University NTU
Original Assignee
National Taiwan University NTU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Taiwan University NTU filed Critical National Taiwan University NTU
Publication of FR2839204A1 publication Critical patent/FR2839204A1/fr
Application granted granted Critical
Publication of FR2839204B1 publication Critical patent/FR2839204B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
FR0215003A 2002-04-26 2002-11-29 Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre. Expired - Fee Related FR2839204B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091108643A TW529188B (en) 2002-04-26 2002-04-26 Metal oxide silicon structure with increased illumination efficiency by using nanometer structure

Publications (2)

Publication Number Publication Date
FR2839204A1 FR2839204A1 (fr) 2003-10-31
FR2839204B1 true FR2839204B1 (fr) 2007-01-19

Family

ID=21688299

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0215003A Expired - Fee Related FR2839204B1 (fr) 2002-04-26 2002-11-29 Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre.

Country Status (6)

Country Link
US (1) US6770903B2 (fr)
JP (1) JP2003324212A (fr)
DE (1) DE10243741A1 (fr)
FR (1) FR2839204B1 (fr)
GB (1) GB2387966A (fr)
TW (1) TW529188B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10336747A1 (de) * 2003-08-11 2005-03-17 Infineon Technologies Ag Halbleiterbauelementanordnung mit einer Nanopartikel aufweisenden Isolationsschicht
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
JP4285343B2 (ja) 2004-07-07 2009-06-24 トヨタ自動車株式会社 車輌のロール剛性制御装置
US20080087881A1 (en) * 2004-11-24 2008-04-17 Kazumasa Ueda Semiconductor Multilayer Substrate, Method For Producing Same And Light-Emitting Device
KR100653651B1 (ko) 2004-12-02 2006-12-05 한국전자통신연구원 광소자용 구조물 및 그의 제조 방법
CN100345249C (zh) * 2005-04-20 2007-10-24 中山大学 一种制作硅纳米线二极管结构场发射器件的方法
DE102006047071A1 (de) * 2006-05-31 2007-12-06 IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik Versetzungsbasierter Lichtemitter mit MIS-Struktur
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US8018032B2 (en) 2008-12-31 2011-09-13 Unimicron Technology Corp. Silicon substrate and chip package structure with silicon base having stepped recess for accommodating chip
US8222657B2 (en) * 2009-02-23 2012-07-17 The Penn State Research Foundation Light emitting apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462787A (en) * 1977-10-28 1979-05-21 Agency Of Ind Science & Technol Semiconductor device and integrated circuit of the same
JP3243303B2 (ja) 1991-10-28 2002-01-07 ゼロックス・コーポレーション 量子閉じ込め半導体発光素子及びその製造方法
JP2000164921A (ja) * 1998-11-26 2000-06-16 Mitsubishi Materials Corp 半導体発光材料及びその製造方法並びにこれを用いた発光素子
US6475874B2 (en) * 2000-12-07 2002-11-05 Advanced Micro Devices, Inc. Damascene NiSi metal gate high-k transistor

Also Published As

Publication number Publication date
JP2003324212A (ja) 2003-11-14
GB2387966A (en) 2003-10-29
TW529188B (en) 2003-04-21
GB0222076D0 (en) 2002-10-30
DE10243741A1 (de) 2003-11-13
FR2839204A1 (fr) 2003-10-31
US20030201434A1 (en) 2003-10-30
US6770903B2 (en) 2004-08-03

Similar Documents

Publication Publication Date Title
FR2823653B1 (fr) Dispositif d'inclinaison de siege
FR2841111B1 (fr) Dispositif d'inclinaison de siege
FR2839204B1 (fr) Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre.
FR2827442B1 (fr) Dispositif a semiconducteur
FR2823810B1 (fr) Dispositif d'ecrou a plaque
ITRM20010522A0 (it) Sequenziale di "power-on-reset" condizionato e robusto a potenza ultrabassa per circuiti integrati.
FR2849294B1 (fr) Dispositif d'interconnexion a double peigne
FR2829610B1 (fr) Dispositif d'affichage
ITNO20030006A0 (it) "articoli a base di ossido di silicio"
FR2862368B1 (fr) Piquage, circuit pneumatique equipe d'un tel piquage et ensemble comprenant un tel circuit
ITTO20031054A1 (it) Procedimento per realizzare un dispositivo a microcavita' di fabry-perot integrato in tecnologia al silicio.
FR2839711B1 (fr) Dispositif de deplacement d'une charge reposant sur le sol
ITTO20020021U1 (it) Dispositivo per l'apertura di un coperchio.
ITMI20030448V0 (it) Dispositivo per l'erogazione multidirezionale di fluidi
FR2848537B1 (fr) Dispositif d'exposition-distribution
IT1319937B1 (it) Dispositivo integrato con verifica di funzionalita'.
FR2836532B1 (fr) Structure munie d'un dispositif anti-vibratoire
Asplund Isproblem i Barduelva
MA26191A1 (fr) Dispositif d'exposition-distribution
FR2851965B1 (fr) Dispositif de deverouillage d'un indicateur de changement de direction
边冬燕 Elegance VS simple
FR2846694B1 (fr) Dispositif de verrouillage d'un ouvrant.
UA6672S (uk) Наличка «victoria»
FR2819907B1 (fr) Dispositif d'interaction avec un micro-ordinateur
ITTO20010051V0 (it) Dispositivo per l'effettuazione di operazioni di precisione a distanza.

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

ST Notification of lapse

Effective date: 20180731