FR2838236B1 - Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur - Google Patents

Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur

Info

Publication number
FR2838236B1
FR2838236B1 FR0204368A FR0204368A FR2838236B1 FR 2838236 B1 FR2838236 B1 FR 2838236B1 FR 0204368 A FR0204368 A FR 0204368A FR 0204368 A FR0204368 A FR 0204368A FR 2838236 B1 FR2838236 B1 FR 2838236B1
Authority
FR
France
Prior art keywords
silicum
polycrystalline
deposition
conductive
aqueous medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0204368A
Other languages
English (en)
Other versions
FR2838236A1 (fr
Inventor
Remi Colin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR0204368A priority Critical patent/FR2838236B1/fr
Priority to EP03740537A priority patent/EP1493192A2/fr
Priority to PCT/FR2003/000977 priority patent/WO2003085747A2/fr
Priority to AU2003260703A priority patent/AU2003260703A1/en
Publication of FR2838236A1 publication Critical patent/FR2838236A1/fr
Application granted granted Critical
Publication of FR2838236B1 publication Critical patent/FR2838236B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
FR0204368A 2002-04-05 2002-04-05 Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur Expired - Lifetime FR2838236B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0204368A FR2838236B1 (fr) 2002-04-05 2002-04-05 Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur
EP03740537A EP1493192A2 (fr) 2002-04-05 2003-03-27 Procede de deposition electrochimique d'un materiau du groupe iv
PCT/FR2003/000977 WO2003085747A2 (fr) 2002-04-05 2003-03-27 Procede de deposition ectrochimique d'un materiau du groupe iv
AU2003260703A AU2003260703A1 (en) 2002-04-05 2003-03-27 Method for the electrodeposition of a material belonging to column iv

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0204368A FR2838236B1 (fr) 2002-04-05 2002-04-05 Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur

Publications (2)

Publication Number Publication Date
FR2838236A1 FR2838236A1 (fr) 2003-10-10
FR2838236B1 true FR2838236B1 (fr) 2004-07-30

Family

ID=28052210

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0204368A Expired - Lifetime FR2838236B1 (fr) 2002-04-05 2002-04-05 Procede de deposition de silicum polycristallin en milieu aqueux sur un support conducteur ou semi-conducteur

Country Status (4)

Country Link
EP (1) EP1493192A2 (fr)
AU (1) AU2003260703A1 (fr)
FR (1) FR2838236B1 (fr)
WO (1) WO2003085747A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100570916C (zh) 2005-05-30 2009-12-16 松下电器产业株式会社 热电变换材料、使用该热电变换材料的热电变换元件以及具有该元件的电子设备和冷却装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341610A (en) * 1978-06-22 1982-07-27 Schumacher John C Energy efficient process for continuous production of thin semiconductor films on metallic substrates
US4571328A (en) * 1982-09-24 1986-02-18 Teknico Industries, Inc. Aqueous hydrides
CA2150798A1 (fr) * 1993-10-01 1995-04-13 William Wesley Berry Hydrures aqueux et leur procede de fabrication

Also Published As

Publication number Publication date
WO2003085747A3 (fr) 2004-04-01
FR2838236A1 (fr) 2003-10-10
EP1493192A2 (fr) 2005-01-05
WO2003085747A2 (fr) 2003-10-16
AU2003260703A8 (en) 2003-10-20
AU2003260703A1 (en) 2003-10-20

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