FR2809973B1 - Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium - Google Patents

Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Info

Publication number
FR2809973B1
FR2809973B1 FR0007276A FR0007276A FR2809973B1 FR 2809973 B1 FR2809973 B1 FR 2809973B1 FR 0007276 A FR0007276 A FR 0007276A FR 0007276 A FR0007276 A FR 0007276A FR 2809973 B1 FR2809973 B1 FR 2809973B1
Authority
FR
France
Prior art keywords
deuterated
silicon
preparing
coating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0007276A
Other languages
English (en)
Other versions
FR2809973A1 (fr
Inventor
Francois Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0007276A priority Critical patent/FR2809973B1/fr
Priority to PCT/FR2001/001754 priority patent/WO2001094662A1/fr
Publication of FR2809973A1 publication Critical patent/FR2809973A1/fr
Application granted granted Critical
Publication of FR2809973B1 publication Critical patent/FR2809973B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
FR0007276A 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium Expired - Fee Related FR2809973B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0007276A FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium
PCT/FR2001/001754 WO2001094662A1 (fr) 2000-06-07 2001-06-07 Procede de preparation d'un revetement sur un substrat par le procede ald utilisant un reactant deutere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0007276A FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Publications (2)

Publication Number Publication Date
FR2809973A1 FR2809973A1 (fr) 2001-12-14
FR2809973B1 true FR2809973B1 (fr) 2003-09-05

Family

ID=8851038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0007276A Expired - Fee Related FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Country Status (1)

Country Link
FR (1) FR2809973B1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08507175A (ja) * 1993-02-19 1996-07-30 ナショナル・セミコンダクター・コーポレイション 重水素原子を有する半導体デバイス
US5976623A (en) * 1996-12-03 1999-11-02 Lucent Technologies Inc. Process for making composite films
JPH10284464A (ja) * 1997-04-08 1998-10-23 Sony Corp 半導体基板の洗浄液及び洗浄方法
US5972765A (en) * 1997-07-16 1999-10-26 International Business Machines Corporation Use of deuterated materials in semiconductor processing
US6146608A (en) * 1997-11-24 2000-11-14 Advanced Technology Materials, Inc. Stable hydride source compositions for manufacture of semiconductor devices and structures

Also Published As

Publication number Publication date
FR2809973A1 (fr) 2001-12-14

Similar Documents

Publication Publication Date Title
FR2773177B1 (fr) Procede d'obtention d'une couche de germanium ou silicium monocristallin sur un substrat de silicium ou germanium monocristallin, respectivement, et produits multicouches obtenus
JP2004507074A5 (fr)
WO2001078115A3 (fr) Revetement de separation destine a des materiaux vitreux
CA2318968A1 (fr) Modele de chassis vertical antiderapant a bras horizontaux arrondis
WO2003030224A3 (fr) Formation de barriere au moyen d'un procede de depot par pulverisation
WO2005052566A3 (fr) Dispositif detecteur de gaz
FR2759362B1 (fr) Substrat transparent muni d'au moins une couche mince a base de nitrure ou d'oxynitrure de silicium et son procede d'obtention
EP1246248A3 (fr) Plaquette sémi-conductrice du type silicium sur isolant et le dispositif sémi-conducteur formé dans celui-ci
EP0810638A3 (fr) Substrat avec une couche intermédiaire d'un dispositif semi-conducteur
FR2719839B1 (fr) Formation d'une couche d'argent sur un substrat vitreux.
FR2803103B1 (fr) Diode schottky sur substrat de carbure de silicium
EP0780889A3 (fr) Procédé de depôt sélectif d'un siliciure de métal réfractaire sur du silicium et plaquette de silicium métallisée par ce procédé
FR2708924B1 (fr) Procédé de dépôt d'une couche de nitrure métallique sur un substrat transparent.
EP0999584A3 (fr) Procédé de fabrication d'un dispositif à semi-conducteur
EP0911878A3 (fr) Système de métallisation
FR2746415B1 (fr) Substrat revetu d'une couche polycristalline de diamant
KR940004256B1 (en) Making method of semiconductor device
NO20034099D0 (no) Dannelse av en frontsidekontakt på silisium på isolator substrat
WO2004093163A3 (fr) Procede et dispositif pour deposer de l'oxyde de silicium sur des substrats de grande surface
FR2780054B1 (fr) Procede de depot d'une couche a base d'oxyde metallique sur un substrat verrier, substrat verrier ainsi revetu
FR2542500B1 (fr) Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant
EP0967457A3 (fr) Système et méthode pour la mesure optique de l'épaisseur diélectrique dans des dispositifs à semi-conducteurs
EP1238950A3 (fr) Articles revêtus à faible émissivité pouvant être traités thermiquement et méthodes de leur production
EP1070562A4 (fr) Outil a diamant fritte et son procede de production
FR2797999B1 (fr) Procede de fabrication d'une capacite integree sur un substrat de silicium

Legal Events

Date Code Title Description
ST Notification of lapse