FR2809973A1 - Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium - Google Patents

Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Info

Publication number
FR2809973A1
FR2809973A1 FR0007276A FR0007276A FR2809973A1 FR 2809973 A1 FR2809973 A1 FR 2809973A1 FR 0007276 A FR0007276 A FR 0007276A FR 0007276 A FR0007276 A FR 0007276A FR 2809973 A1 FR2809973 A1 FR 2809973A1
Authority
FR
France
Prior art keywords
metal
deuterated
oxide
layer
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR0007276A
Other languages
English (en)
Other versions
FR2809973B1 (fr
Inventor
Francois Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0007276A priority Critical patent/FR2809973B1/fr
Priority to PCT/FR2001/001754 priority patent/WO2001094662A1/fr
Publication of FR2809973A1 publication Critical patent/FR2809973A1/fr
Application granted granted Critical
Publication of FR2809973B1 publication Critical patent/FR2809973B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un procédé de préparation d'un revêtement comprenant au moins une couche d'oxyde de métal deutéré ou de nitrure de métal isolant deutéré, sur un substrat comprenant du silicium, ladite couche d'oxyde de métal ou de nitrure de métal isolant étant réalisée par un procédé de dépôt chimique, tel que CVD, ALCVD ou MOCVD, en présence de molécules deutérées.L'invention s'applique en particulier à la préparation de couches d'oxydes de haute permittivité, dit " oxydes High-K ", constituant notamment les isolants de grille de dispositifs électroniques, tels que les transistors et les mémoires capacité radiofréquence.
FR0007276A 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium Expired - Fee Related FR2809973B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0007276A FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium
PCT/FR2001/001754 WO2001094662A1 (fr) 2000-06-07 2001-06-07 Procede de preparation d'un revetement sur un substrat par le procede ald utilisant un reactant deutere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0007276A FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Publications (2)

Publication Number Publication Date
FR2809973A1 true FR2809973A1 (fr) 2001-12-14
FR2809973B1 FR2809973B1 (fr) 2003-09-05

Family

ID=8851038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0007276A Expired - Fee Related FR2809973B1 (fr) 2000-06-07 2000-06-07 Procede de preparation d'un revetement comprenant au moins une couche d'oxyde de metal deutere ou de nitrure de metal isolant deutere, sur un substrat comprenant un silicium

Country Status (1)

Country Link
FR (1) FR2809973B1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994019829A1 (fr) * 1993-02-19 1994-09-01 National Semiconductor Corporation Dispositif a semi-conducteur comprenant des atomes de deuterium
JPH10284464A (ja) * 1997-04-08 1998-10-23 Sony Corp 半導体基板の洗浄液及び洗浄方法
EP0892424A2 (fr) * 1997-07-16 1999-01-20 International Business Machines Corporation Utilisation de matériaux deuterisés dans la fabrication de semiconducteur
WO1999027561A2 (fr) * 1997-11-24 1999-06-03 Advanced Technology Materials, Inc. Compositions de depart stables a base d'hydrure pour la fabrication de dispositifs et de structures a semiconducteur
US6110543A (en) * 1996-12-03 2000-08-29 Lucent Technologies Inc. Process for making compound films

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994019829A1 (fr) * 1993-02-19 1994-09-01 National Semiconductor Corporation Dispositif a semi-conducteur comprenant des atomes de deuterium
US6110543A (en) * 1996-12-03 2000-08-29 Lucent Technologies Inc. Process for making compound films
JPH10284464A (ja) * 1997-04-08 1998-10-23 Sony Corp 半導体基板の洗浄液及び洗浄方法
EP0892424A2 (fr) * 1997-07-16 1999-01-20 International Business Machines Corporation Utilisation de matériaux deuterisés dans la fabrication de semiconducteur
WO1999027561A2 (fr) * 1997-11-24 1999-06-03 Advanced Technology Materials, Inc. Compositions de depart stables a base d'hydrure pour la fabrication de dispositifs et de structures a semiconducteur

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
AMATO CARMELA C ET AL: "Decomposition chemistry of an AlN precursor bis-dimethylaluminum deutero-amide, [ (CH3)2AlND2]3, as revealed by time-of-flight molecular beam mass spectrometry", PROCEEDINGS OF THE 3RD BIENNIAL MEETING OF CHEMICAL PERSPECTIVES OF MICROELECTRONIC MATERIALS;BOSTON, MA, USA NOV 30-DEC 3 1992, vol. 282, 30 November 1992 (1992-11-30), Mater Res Soc Symp Proc;Materials Research Society Symposium Proceedings; Chemical Perspectives of Microelectronic Materials III 1993 Publ by Materials Research Society, Pittsburgh, PA, USA, pages 611 - 616, XP000986789 *
KUKLI K ET AL: "PROPERTIES OF TANTALUM OXIDE THIN FILMS GROWN BY ATOMIC LAYER DEPOSITION", THIN SOLID FILMS,CH,ELSEVIER-SEQUOIA S.A. LAUSANNE, vol. 260, no. 2, 15 May 1995 (1995-05-15), pages 135 - 142, XP000511900, ISSN: 0040-6090 *
LO G Q ET AL: "RELIABILITY CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH CHEMICAL VAPOR DEPOSITED TA2O5 GATE DIELECTRICS", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 62, no. 9, 1 March 1993 (1993-03-01), pages 973 - 975, XP000345858, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *
ROCHELEAU R E ET AL: "MOCVD DEPOSITION OF MGAL2O4 FILMS USING METAL ALKOXIDE PRECURSORS", CHEMISTRY OF MATERIALS,US,AMERICAN CHEMICAL SOCIETY, WASHINGTON, vol. 6, no. 10, 1 October 1994 (1994-10-01), pages 1615 - 1619, XP000484476, ISSN: 0897-4756 *
VEITH M ET AL: "A SINGLE-SOURCE CVD PRECURSOR TO MGAL2O4: UMGä(O'BU)2ALH2ü2", CHEMICAL VAPOR DEPOSITION,DE,VCH PUBLISHERS, WEINHEIM, vol. 5, no. 2, March 1999 (1999-03-01), pages 87 - 90, XP000833808, ISSN: 0948-1907 *

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Publication number Publication date
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