FR2800913B1 - Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct - Google Patents

Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct

Info

Publication number
FR2800913B1
FR2800913B1 FR9914105A FR9914105A FR2800913B1 FR 2800913 B1 FR2800913 B1 FR 2800913B1 FR 9914105 A FR9914105 A FR 9914105A FR 9914105 A FR9914105 A FR 9914105A FR 2800913 B1 FR2800913 B1 FR 2800913B1
Authority
FR
France
Prior art keywords
manufacturing
direct access
access memories
dynamic direct
capacity stack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9914105A
Other languages
English (en)
Other versions
FR2800913A1 (fr
Inventor
Thomas Skotnicki
Malgorzata Jurczak
Catherine Mallardeau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9914105A priority Critical patent/FR2800913B1/fr
Priority to US10/129,881 priority patent/US7224015B1/en
Priority to PCT/FR2000/003153 priority patent/WO2001035448A2/fr
Publication of FR2800913A1 publication Critical patent/FR2800913A1/fr
Application granted granted Critical
Publication of FR2800913B1 publication Critical patent/FR2800913B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9914105A 1999-11-10 1999-11-10 Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct Expired - Fee Related FR2800913B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9914105A FR2800913B1 (fr) 1999-11-10 1999-11-10 Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct
US10/129,881 US7224015B1 (en) 1999-11-10 2000-11-10 Method for making a stack of capacitors, in particular for dynamic random access memory [DRAM]
PCT/FR2000/003153 WO2001035448A2 (fr) 1999-11-10 2000-11-10 Procede de fabrication d'un condensateur empile pour dram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9914105A FR2800913B1 (fr) 1999-11-10 1999-11-10 Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct

Publications (2)

Publication Number Publication Date
FR2800913A1 FR2800913A1 (fr) 2001-05-11
FR2800913B1 true FR2800913B1 (fr) 2004-09-03

Family

ID=9551943

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9914105A Expired - Fee Related FR2800913B1 (fr) 1999-11-10 1999-11-10 Procede de fabrication d'un empilement de capacites, en particulier pour memoires dynamiques a acces direct

Country Status (3)

Country Link
US (1) US7224015B1 (fr)
FR (1) FR2800913B1 (fr)
WO (1) WO2001035448A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2879820B1 (fr) * 2004-12-16 2009-01-16 Commissariat Energie Atomique Modulateur a jonction capacitive, jonction capacitive et son procede de realisation
KR101934426B1 (ko) * 2012-11-26 2019-01-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9349880B2 (en) * 2014-06-17 2016-05-24 Globalfoundries Inc. Semiconductor devices with semiconductor bodies having interleaved horizontal portions and method of forming the devices
US9391176B2 (en) * 2014-10-23 2016-07-12 Globalfoundries Inc. Multi-gate FETs having corrugated semiconductor stacks and method of forming the same
US10424585B2 (en) 2016-01-21 2019-09-24 International Business Machines Corporation Decoupling capacitor on strain relaxation buffer layer
US10833146B2 (en) * 2019-03-29 2020-11-10 International Business Machines Corporation Horizontal-trench capacitor
US20220181160A1 (en) * 2020-12-09 2022-06-09 Applied Materials, Inc. Methods and apparatus for in-situ protection of etched surfaces

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155657A (en) * 1991-10-31 1992-10-13 International Business Machines Corporation High area capacitor formation using material dependent etching
US5679598A (en) * 1994-12-30 1997-10-21 Lsi Logic Corporation Method of making a CMOS dynamic random-access memory (DRAM)
US5622882A (en) * 1994-12-30 1997-04-22 Lsi Logic Corporation Method of making a CMOS dynamic random-access memory (DRAM)
DE19707977C1 (de) * 1997-02-27 1998-06-10 Siemens Ag Verfahren zur Herstellung eines Kondensators für eine Halbleiteranordnung
DE19821776C1 (de) * 1998-05-14 1999-09-30 Siemens Ag Herstellverfahren für einen Kondensator in einer integrierten Halbleiterschaltung

Also Published As

Publication number Publication date
FR2800913A1 (fr) 2001-05-11
US7224015B1 (en) 2007-05-29
WO2001035448A3 (fr) 2001-10-11
WO2001035448A2 (fr) 2001-05-17

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090731