FR2798395B1 - Procede de fabrication de cibles de pulverisation inter- metalliques haute-densite - Google Patents
Procede de fabrication de cibles de pulverisation inter- metalliques haute-densiteInfo
- Publication number
- FR2798395B1 FR2798395B1 FR0010209A FR0010209A FR2798395B1 FR 2798395 B1 FR2798395 B1 FR 2798395B1 FR 0010209 A FR0010209 A FR 0010209A FR 0010209 A FR0010209 A FR 0010209A FR 2798395 B1 FR2798395 B1 FR 2798395B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing high
- sputter targets
- density inter
- metallic sputter
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/366,453 US6042777A (en) | 1999-08-03 | 1999-08-03 | Manufacturing of high density intermetallic sputter targets |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2798395A1 FR2798395A1 (fr) | 2001-03-16 |
FR2798395B1 true FR2798395B1 (fr) | 2005-02-11 |
Family
ID=23443057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0010209A Expired - Lifetime FR2798395B1 (fr) | 1999-08-03 | 2000-08-02 | Procede de fabrication de cibles de pulverisation inter- metalliques haute-densite |
Country Status (5)
Country | Link |
---|---|
US (1) | US6042777A (fr) |
JP (1) | JP4860029B2 (fr) |
KR (1) | KR100755724B1 (fr) |
DE (1) | DE10035719B4 (fr) |
FR (1) | FR2798395B1 (fr) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6183686B1 (en) * | 1998-08-04 | 2001-02-06 | Tosoh Smd, Inc. | Sputter target assembly having a metal-matrix-composite backing plate and methods of making same |
AT4240U1 (de) * | 2000-11-20 | 2001-04-25 | Plansee Ag | Verfahren zur herstellung einer verdampfungsquelle |
US6797137B2 (en) * | 2001-04-11 | 2004-09-28 | Heraeus, Inc. | Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal |
EP1511879A1 (fr) * | 2002-06-07 | 2005-03-09 | Heraeus, Inc. | Fabrication de cibles de pulverisation intermetalliques |
US20030228238A1 (en) * | 2002-06-07 | 2003-12-11 | Wenjun Zhang | High-PTF sputtering targets and method of manufacturing |
EP1611265B1 (fr) * | 2003-03-28 | 2017-05-03 | Vitro, S.A.B. de C.V. | Substrats recouverts de melanges de materiaux en titane et en aluminium |
US20070007505A1 (en) * | 2005-07-07 | 2007-01-11 | Honeywell International Inc. | Chalcogenide PVD components |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
US20080236738A1 (en) * | 2007-03-30 | 2008-10-02 | Chi-Fung Lo | Bonded sputtering target and methods of manufacture |
US7871563B2 (en) * | 2007-07-17 | 2011-01-18 | Williams Advanced Materials, Inc. | Process for the refurbishing of a sputtering target |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
EP2268434A1 (fr) * | 2008-03-20 | 2011-01-05 | Sci Engineered Materials, Inc. | Procédé pour fabriquer des cibles de pulvérisation cathodique composites et cibles fabriquées selon le procédé |
US20100178525A1 (en) * | 2009-01-12 | 2010-07-15 | Scott Campbell | Method for making composite sputtering targets and the tartets made in accordance with the method |
JP2010095770A (ja) * | 2008-10-17 | 2010-04-30 | Hitachi Metals Ltd | Ti−Al系合金ターゲット及びその製造方法 |
US20100140084A1 (en) * | 2008-12-09 | 2010-06-10 | Chi-Fung Lo | Method for production of aluminum containing targets |
US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
SG10201505733SA (en) | 2010-07-30 | 2015-09-29 | Jx Nippon Mining & Metals Corp | Sputtering target and/or coil, and process for producing same |
JP5669016B2 (ja) * | 2011-04-18 | 2015-02-12 | 三菱マテリアル株式会社 | スパッタリングターゲットおよびその製造方法 |
CN102747333A (zh) * | 2011-04-21 | 2012-10-24 | 鸿富锦精密工业(深圳)有限公司 | 镀膜件的制备方法及由该方法制得的镀膜件 |
CN102747332A (zh) * | 2011-04-21 | 2012-10-24 | 鸿富锦精密工业(深圳)有限公司 | 镀膜件的制备方法及由该方法制得的镀膜件 |
CN102747326A (zh) * | 2011-04-21 | 2012-10-24 | 鸿富锦精密工业(深圳)有限公司 | 镀膜件的制备方法及由该方法制得的镀膜件 |
KR101273096B1 (ko) * | 2011-04-26 | 2013-06-13 | 김준년 | 스퍼터용 원통형 타겟의 제조 방법 |
KR20170016024A (ko) | 2011-05-10 | 2017-02-10 | 에이치. 씨. 스타아크 아이앤씨 | 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품 |
MY167946A (en) | 2012-01-18 | 2018-10-08 | Jx Nippon Mining & Metals Corp | Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
US11103926B1 (en) * | 2018-03-07 | 2021-08-31 | The United States Of America, As Represented By The Secretary Of The Navy | Synthesis of an intermetallic compound powder |
CN115255367B (zh) * | 2022-08-01 | 2024-04-16 | 宁波江丰电子材料股份有限公司 | 一种镍铝合金溅射靶材及其热压制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT388752B (de) * | 1986-04-30 | 1989-08-25 | Plansee Metallwerk | Verfahren zur herstellung eines targets fuer die kathodenzerstaeubung |
EP0483375B1 (fr) * | 1990-05-15 | 1996-03-13 | Kabushiki Kaisha Toshiba | Cible de pulverisation et production de cette derniere |
US5342571A (en) * | 1992-02-19 | 1994-08-30 | Tosoh Smd, Inc. | Method for producing sputtering target for deposition of titanium, aluminum and nitrogen coatings, sputtering target made thereby, and method of sputtering with said targets |
US5464520A (en) * | 1993-03-19 | 1995-11-07 | Japan Energy Corporation | Silicide targets for sputtering and method of manufacturing the same |
WO1999002288A1 (fr) * | 1997-07-11 | 1999-01-21 | Johnson Matthey Electronics, Inc. | Cibles de pulverisation cathodique d'aluminures et de siliciures intermetalliques, et leurs procedes de fabrication |
US6165413A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of making high density sputtering targets |
-
1999
- 1999-08-03 US US09/366,453 patent/US6042777A/en not_active Expired - Lifetime
-
2000
- 2000-07-21 DE DE10035719A patent/DE10035719B4/de not_active Expired - Lifetime
- 2000-08-02 JP JP2000233926A patent/JP4860029B2/ja not_active Expired - Lifetime
- 2000-08-02 KR KR1020000044792A patent/KR100755724B1/ko active IP Right Grant
- 2000-08-02 FR FR0010209A patent/FR2798395B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4860029B2 (ja) | 2012-01-25 |
FR2798395A1 (fr) | 2001-03-16 |
KR100755724B1 (ko) | 2007-09-06 |
DE10035719A1 (de) | 2001-02-15 |
US6042777A (en) | 2000-03-28 |
DE10035719B4 (de) | 2012-02-16 |
JP2001073128A (ja) | 2001-03-21 |
KR20010049970A (ko) | 2001-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2798395B1 (fr) | Procede de fabrication de cibles de pulverisation inter- metalliques haute-densite | |
SG83197A1 (en) | Improved copper target for sputter deposition | |
AU8022400A (en) | Process for producing sputtering target materials | |
FR2797094B1 (fr) | Procede de fabrication de composants unipolaires | |
IL158993A0 (en) | Recessed sputter target | |
ZA200106721B (en) | Process for the manufacture of furfural. | |
AU2002333640A1 (en) | Refurbishing spent sputtering targets | |
AU2844301A (en) | Process for the carbonylation of formaldehyde | |
SG86446A1 (en) | Magnetron with cooling system for substrate processing system | |
EP1116800A4 (fr) | Cible de pulverisation | |
SG93272A1 (en) | Improved coil for sputter deposition | |
IL157013A0 (en) | Ultrafine-grain-copper-base sputter targets | |
FR2766399B1 (fr) | Procede de fabrication de tubes metalliques | |
FR2788234B1 (fr) | Procede de chanfreinage | |
FR2766616B1 (fr) | Procede de fabrication de microstructures metalliques | |
MA25522A1 (fr) | Procede de traitement de copd | |
AU6524300A (en) | Sputtering process | |
AU7591400A (en) | Method for producing cobalt-based alloy sputter target | |
IL138642A0 (en) | Extended life sputter targets | |
FR2792454B1 (fr) | Procede de fabrication d'un panneau a plasma | |
AU2002250831A1 (en) | Method for the production of sputtering targets | |
NO20001134L (no) | FremgangsmÕte for fremstilling av VCM | |
FR2707670B1 (fr) | Cible pour installations de pulvérisation cathodique. | |
FR2798483B1 (fr) | Procede de production automatique de specifications | |
FR2792173B1 (fr) | Procede de fabrication de vetements ou de parties de vetements par deformation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 18 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |