FR2773643B1 - Circuit de protection contre les decharges electrostatiques de declenchement de substrat sur un circuit integre a profondeur d'integration - Google Patents
Circuit de protection contre les decharges electrostatiques de declenchement de substrat sur un circuit integre a profondeur d'integrationInfo
- Publication number
- FR2773643B1 FR2773643B1 FR9805411A FR9805411A FR2773643B1 FR 2773643 B1 FR2773643 B1 FR 2773643B1 FR 9805411 A FR9805411 A FR 9805411A FR 9805411 A FR9805411 A FR 9805411A FR 2773643 B1 FR2773643 B1 FR 2773643B1
- Authority
- FR
- France
- Prior art keywords
- circuit
- integrated
- protection against
- against electrostatic
- electrostatic discharges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087100473A TW363261B (en) | 1998-01-15 | 1998-01-15 | Protection circuit for substrate triggering electrostatic discharge |
| GB9807601A GB2336241B (en) | 1998-01-15 | 1998-04-08 | Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2773643A1 FR2773643A1 (fr) | 1999-07-16 |
| FR2773643B1 true FR2773643B1 (fr) | 2002-01-18 |
Family
ID=26313448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9805411A Expired - Fee Related FR2773643B1 (fr) | 1998-01-15 | 1998-04-29 | Circuit de protection contre les decharges electrostatiques de declenchement de substrat sur un circuit integre a profondeur d'integration |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE19818985B4 (fr) |
| FR (1) | FR2773643B1 (fr) |
| GB (1) | GB2336241B (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW575989B (en) | 2002-09-25 | 2004-02-11 | Mediatek Inc | NPN Darlington ESD protection circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2679046B2 (ja) * | 1987-05-22 | 1997-11-19 | ソニー株式会社 | メモリ装置 |
| JPH02119262A (ja) * | 1988-10-28 | 1990-05-07 | Toshiba Corp | 半導体装置 |
| DE3907523A1 (de) * | 1989-03-08 | 1990-09-20 | Siemens Ag | Schutzschaltung gegen ueberspannungen fuer mos-bauelemente |
| GB8921841D0 (en) * | 1989-09-27 | 1989-11-08 | Sarnoff David Res Center | Nmos device with integral esd protection |
| DE69231494T2 (de) * | 1991-12-27 | 2001-05-10 | Texas Instruments Inc | Vorrichtung für ESD-Schutz |
| JP3149999B2 (ja) * | 1992-10-31 | 2001-03-26 | 日本電気株式会社 | 半導体入出力保護装置 |
| GB2273831B (en) * | 1992-12-24 | 1997-03-26 | Motorola Semiconducteurs | Voltage protection circuit |
| US5543650A (en) * | 1995-01-12 | 1996-08-06 | International Business Machines Corporation | Electrostatic discharge protection circuit employing a mosfet device |
| US5631793A (en) * | 1995-09-05 | 1997-05-20 | Winbond Electronics Corporation | Capacitor-couple electrostatic discharge protection circuit |
| NL1008963C2 (nl) * | 1998-04-22 | 1999-10-25 | United Microelectronics Corp | Beveiligingsschakeling tegen elektrostatische ontlading met substraat-triggering voor diep-submicron geïntegreerde schakelingen. |
-
1998
- 1998-04-08 GB GB9807601A patent/GB2336241B/en not_active Expired - Fee Related
- 1998-04-28 DE DE19818985A patent/DE19818985B4/de not_active Expired - Fee Related
- 1998-04-29 FR FR9805411A patent/FR2773643B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2336241B (en) | 2000-06-14 |
| DE19818985A1 (de) | 1999-07-22 |
| GB2336241A (en) | 1999-10-13 |
| FR2773643A1 (fr) | 1999-07-16 |
| DE19818985B4 (de) | 2005-10-06 |
| GB9807601D0 (en) | 1998-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20101230 |