FR2747840B1 - Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe - Google Patents

Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe

Info

Publication number
FR2747840B1
FR2747840B1 FR9605005A FR9605005A FR2747840B1 FR 2747840 B1 FR2747840 B1 FR 2747840B1 FR 9605005 A FR9605005 A FR 9605005A FR 9605005 A FR9605005 A FR 9605005A FR 2747840 B1 FR2747840 B1 FR 2747840B1
Authority
FR
France
Prior art keywords
ion beam
microwave radiation
irradiation apparatus
associated process
apparatus combined
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9605005A
Other languages
English (en)
Other versions
FR2747840A1 (fr
Inventor
Denis Griot
Henri Claude Gay
Irenee Pages
Pierre Gibert
Kwang Jacques Lin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Freescale Semiconducteurs France SAS
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Priority to FR9605005A priority Critical patent/FR2747840B1/fr
Priority to EP97103478A priority patent/EP0803894A1/fr
Priority to JP9114254A priority patent/JPH1055775A/ja
Priority to KR1019970014888A priority patent/KR970072073A/ko
Publication of FR2747840A1 publication Critical patent/FR2747840A1/fr
Application granted granted Critical
Publication of FR2747840B1 publication Critical patent/FR2747840B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
FR9605005A 1996-04-22 1996-04-22 Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe Expired - Fee Related FR2747840B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR9605005A FR2747840B1 (fr) 1996-04-22 1996-04-22 Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe
EP97103478A EP0803894A1 (fr) 1996-04-22 1997-03-03 Moyens et méthode pour l'irradiation combinée par faisceau d'ions et par microonde
JP9114254A JPH1055775A (ja) 1996-04-22 1997-04-16 組み合わされたイオンビームおよびマイクロ波照射手段および方法
KR1019970014888A KR970072073A (ko) 1996-04-22 1997-04-22 결합된 이온 빔 및 마이크로파 조사 수단 및 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9605005A FR2747840B1 (fr) 1996-04-22 1996-04-22 Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe

Publications (2)

Publication Number Publication Date
FR2747840A1 FR2747840A1 (fr) 1997-10-24
FR2747840B1 true FR2747840B1 (fr) 1998-09-11

Family

ID=9491430

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9605005A Expired - Fee Related FR2747840B1 (fr) 1996-04-22 1996-04-22 Appareil d'irradiation combinee par un faisceau d'ions et un rayonnement micro-onde, et procede associe

Country Status (4)

Country Link
EP (1) EP0803894A1 (fr)
JP (1) JPH1055775A (fr)
KR (1) KR970072073A (fr)
FR (1) FR2747840B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012186465A (ja) * 2011-02-18 2012-09-27 Hitachi Kokusai Electric Inc 基板処理装置
EP2765596B1 (fr) * 2013-02-12 2018-07-11 Infineon Technologies Americas Corp. Implantation d'ions à des conditions d'équilibre de surface à haute température
CN105977124A (zh) * 2016-07-29 2016-09-28 上海华力微电子有限公司 半导体衬底的承载台、离子注入设备及工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2670950B1 (fr) * 1990-12-20 1993-04-16 Motorola Semiconducteurs Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.
EP0707757B1 (fr) * 1994-05-06 1999-12-29 Koninklijke Philips Electronics N.V. Systeme de transmission par faisceaux hertziens

Also Published As

Publication number Publication date
KR970072073A (ko) 1997-11-07
EP0803894A1 (fr) 1997-10-29
JPH1055775A (ja) 1998-02-24
FR2747840A1 (fr) 1997-10-24

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Legal Events

Date Code Title Description
ST Notification of lapse