FR2521777B1 - Procede et appareil de balayage par un faisceau pour l'implantation ionique - Google Patents

Procede et appareil de balayage par un faisceau pour l'implantation ionique

Info

Publication number
FR2521777B1
FR2521777B1 FR8301167A FR8301167A FR2521777B1 FR 2521777 B1 FR2521777 B1 FR 2521777B1 FR 8301167 A FR8301167 A FR 8301167A FR 8301167 A FR8301167 A FR 8301167A FR 2521777 B1 FR2521777 B1 FR 2521777B1
Authority
FR
France
Prior art keywords
ion implantation
scan method
beam scan
implantation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8301167A
Other languages
English (en)
Other versions
FR2521777A1 (fr
Inventor
David Arthur Robertson
Norman Leonard Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of FR2521777A1 publication Critical patent/FR2521777A1/fr
Application granted granted Critical
Publication of FR2521777B1 publication Critical patent/FR2521777B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
FR8301167A 1982-02-18 1983-01-26 Procede et appareil de balayage par un faisceau pour l'implantation ionique Expired FR2521777B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/349,742 US4421988A (en) 1982-02-18 1982-02-18 Beam scanning method and apparatus for ion implantation

Publications (2)

Publication Number Publication Date
FR2521777A1 FR2521777A1 (fr) 1983-08-19
FR2521777B1 true FR2521777B1 (fr) 1989-07-28

Family

ID=23373761

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8301167A Expired FR2521777B1 (fr) 1982-02-18 1983-01-26 Procede et appareil de balayage par un faisceau pour l'implantation ionique

Country Status (8)

Country Link
US (1) US4421988A (fr)
JP (1) JPS58190023A (fr)
CA (1) CA1189198A (fr)
CH (1) CH666141A5 (fr)
DE (1) DE3304773A1 (fr)
FR (1) FR2521777B1 (fr)
GB (1) GB2116357B (fr)
NL (1) NL191195C (fr)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3484334D1 (de) * 1983-08-15 1991-05-02 Applied Materials Inc Vorrichtung und verfahren zur ionenimplantation.
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
JPS60143630A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd イオン注入方法
GB8417040D0 (en) * 1984-07-04 1984-08-08 Salford University Of Modifying properties of material
JPH0630237B2 (ja) * 1984-09-10 1994-04-20 株式会社日立製作所 イオン打込み装置
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
JPS62287557A (ja) * 1986-06-05 1987-12-14 Tokyo Electron Ltd イオン注入装置
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US4804852A (en) * 1987-01-29 1989-02-14 Eaton Corporation Treating work pieces with electro-magnetically scanned ion beams
GB2216714B (en) * 1988-03-11 1992-10-14 Ulvac Corp Ion implanter system
US5981961A (en) * 1996-03-15 1999-11-09 Applied Materials, Inc. Apparatus and method for improved scanning efficiency in an ion implanter
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
US6300643B1 (en) 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6020592A (en) * 1998-08-03 2000-02-01 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US6676595B1 (en) 1998-08-24 2004-01-13 Varian Medical Systems Technologies, Inc. Radioactive medical implant and method of manufacturing
EP1220585B1 (fr) * 1999-09-27 2011-07-06 Hitachi, Ltd. Appareil d'irradiation a faisceau de particules chargees, et procede de commande associe
US6677599B2 (en) * 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
CN1256751C (zh) * 2000-05-15 2006-05-17 瓦里安半导体设备联合公司 离子注入机中的高效率扫描
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US6661016B2 (en) 2000-06-22 2003-12-09 Proteros, Llc Ion implantation uniformity correction using beam current control
US7547460B2 (en) 2000-09-15 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Ion implanter optimizer scan waveform retention and recovery
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
WO2002043104A2 (fr) * 2000-11-22 2002-05-30 Varian Semiconductor Equipment Associates, Inc. Systeme et procedes de balayage hybride pour implantation ionique
US6710359B2 (en) 2001-03-23 2004-03-23 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for scanned beam uniformity adjustment in ion implanters
US6908836B2 (en) * 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7355188B2 (en) * 2005-05-24 2008-04-08 Varian Semiconductor Equipment Associates, Inc. Technique for uniformity tuning in an ion implanter system
JP4748714B2 (ja) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法
JP2007123164A (ja) * 2005-10-31 2007-05-17 Sii Nanotechnology Inc 荷電粒子ビーム照射方法及び荷電粒子ビーム装置
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
JP5143606B2 (ja) * 2008-03-28 2013-02-13 住友重機械工業株式会社 荷電粒子線照射装置
JP5448586B2 (ja) * 2009-06-05 2014-03-19 キヤノン株式会社 光学素子の製造方法
JP5701201B2 (ja) * 2011-12-19 2015-04-15 株式会社Ｓｅｎ イオン注入方法及びイオン注入装置
DE102016122791B3 (de) 2016-11-25 2018-05-30 mi2-factory GmbH Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4131487A (en) * 1977-10-26 1978-12-26 Western Electric Company, Inc. Gettering semiconductor wafers with a high energy laser beam
JPS54102934A (en) * 1978-01-31 1979-08-13 Fujitsu Ltd Communication control system between plural processors and common input/output devices
NL183553C (nl) * 1978-05-12 1988-11-16 Philips Nv Inrichting voor het richten van elektrisch geladen deeltjes naar een trefplaats.
NL182924C (nl) * 1978-05-12 1988-06-01 Philips Nv Inrichting voor het implanteren van ionen in een trefplaat.
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation

Also Published As

Publication number Publication date
NL191195B (nl) 1994-10-03
GB2116357B (en) 1985-07-10
GB2116357A (en) 1983-09-21
US4421988A (en) 1983-12-20
JPH0526328B2 (fr) 1993-04-15
NL191195C (nl) 1995-03-01
DE3304773C2 (fr) 1993-05-27
NL8300056A (nl) 1983-09-16
JPS58190023A (ja) 1983-11-05
CA1189198A (fr) 1985-06-18
GB8302590D0 (en) 1983-03-02
FR2521777A1 (fr) 1983-08-19
CH666141A5 (de) 1988-06-30
DE3304773A1 (de) 1983-08-25

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse