FR2747507B1 - Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane - Google Patents

Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane

Info

Publication number
FR2747507B1
FR2747507B1 FR9700284A FR9700284A FR2747507B1 FR 2747507 B1 FR2747507 B1 FR 2747507B1 FR 9700284 A FR9700284 A FR 9700284A FR 9700284 A FR9700284 A FR 9700284A FR 2747507 B1 FR2747507 B1 FR 2747507B1
Authority
FR
France
Prior art keywords
manufacturing
titanium oxide
leakage current
oxide films
current electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9700284A
Other languages
English (en)
French (fr)
Other versions
FR2747507A1 (fr
Inventor
Shi Chung Sun
Tsai Fu Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW85104195A external-priority patent/TW285757B/zh
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Publication of FR2747507A1 publication Critical patent/FR2747507A1/fr
Application granted granted Critical
Publication of FR2747507B1 publication Critical patent/FR2747507B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • H01L28/60Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9700284A 1996-04-10 1997-01-14 Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane Expired - Fee Related FR2747507B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW85104195A TW285757B (en) 1996-04-10 1996-04-10 The manufacturing method of low-leaking current electrode for LPCVD TiO film
GB9625144A GB2320128B (en) 1996-04-10 1996-12-03 Process for fabricating low leakage, current electrode for LPCVD itianium oxide films

Publications (2)

Publication Number Publication Date
FR2747507A1 FR2747507A1 (fr) 1997-10-17
FR2747507B1 true FR2747507B1 (fr) 1998-12-04

Family

ID=26310538

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9700284A Expired - Fee Related FR2747507B1 (fr) 1996-04-10 1997-01-14 Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane

Country Status (4)

Country Link
JP (1) JP3074469B2 (ja)
DE (1) DE19651106A1 (ja)
FR (1) FR2747507B1 (ja)
GB (1) GB2320128B (ja)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit

Also Published As

Publication number Publication date
JP3074469B2 (ja) 2000-08-07
GB9625144D0 (en) 1997-01-22
GB2320128A (en) 1998-06-10
JPH10116967A (ja) 1998-05-06
GB2320128B (en) 2001-11-14
FR2747507A1 (fr) 1997-10-17
DE19651106A1 (de) 1997-10-16

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Legal Events

Date Code Title Description
ST Notification of lapse