FR2747507B1 - Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane - Google Patents
Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titaneInfo
- Publication number
- FR2747507B1 FR2747507B1 FR9700284A FR9700284A FR2747507B1 FR 2747507 B1 FR2747507 B1 FR 2747507B1 FR 9700284 A FR9700284 A FR 9700284A FR 9700284 A FR9700284 A FR 9700284A FR 2747507 B1 FR2747507 B1 FR 2747507B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- titanium oxide
- leakage current
- oxide films
- current electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85104195A TW285757B (en) | 1996-04-10 | 1996-04-10 | The manufacturing method of low-leaking current electrode for LPCVD TiO film |
GB9625144A GB2320128B (en) | 1996-04-10 | 1996-12-03 | Process for fabricating low leakage, current electrode for LPCVD itianium oxide films |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2747507A1 FR2747507A1 (fr) | 1997-10-17 |
FR2747507B1 true FR2747507B1 (fr) | 1998-12-04 |
Family
ID=26310538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9700284A Expired - Fee Related FR2747507B1 (fr) | 1996-04-10 | 1997-01-14 | Procede de fabrication d'une electrode a faible courant de fuite pour des pellicules d'oxyde de titane |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP3074469B2 (ja) |
DE (1) | DE19651106A1 (ja) |
FR (1) | FR2747507B1 (ja) |
GB (1) | GB2320128B (ja) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745968A (en) * | 1980-08-29 | 1982-03-16 | Ibm | Capacitor with double dielectric unit |
-
1996
- 1996-12-03 GB GB9625144A patent/GB2320128B/en not_active Expired - Fee Related
- 1996-12-09 DE DE19651106A patent/DE19651106A1/de not_active Withdrawn
-
1997
- 1997-01-14 FR FR9700284A patent/FR2747507B1/fr not_active Expired - Fee Related
- 1997-03-18 JP JP09064899A patent/JP3074469B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3074469B2 (ja) | 2000-08-07 |
GB9625144D0 (en) | 1997-01-22 |
GB2320128A (en) | 1998-06-10 |
JPH10116967A (ja) | 1998-05-06 |
GB2320128B (en) | 2001-11-14 |
FR2747507A1 (fr) | 1997-10-17 |
DE19651106A1 (de) | 1997-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |