FR2719416B1 - Process for passivation of the sides of a thin-film semiconductor component. - Google Patents

Process for passivation of the sides of a thin-film semiconductor component.

Info

Publication number
FR2719416B1
FR2719416B1 FR9405240A FR9405240A FR2719416B1 FR 2719416 B1 FR2719416 B1 FR 2719416B1 FR 9405240 A FR9405240 A FR 9405240A FR 9405240 A FR9405240 A FR 9405240A FR 2719416 B1 FR2719416 B1 FR 2719416B1
Authority
FR
France
Prior art keywords
passivation
thin
sides
semiconductor component
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9405240A
Other languages
French (fr)
Other versions
FR2719416A1 (en
Inventor
Jean-Michel Vignolle
Rene Chaudet
Claude Venin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson-LCD
Original Assignee
Thomson-LCD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson-LCD filed Critical Thomson-LCD
Priority to FR9405240A priority Critical patent/FR2719416B1/en
Priority to JP7528040A priority patent/JPH09512667A/en
Priority to PCT/FR1995/000572 priority patent/WO1995030241A1/en
Priority to EP95919467A priority patent/EP0757845A1/en
Publication of FR2719416A1 publication Critical patent/FR2719416A1/en
Application granted granted Critical
Publication of FR2719416B1 publication Critical patent/FR2719416B1/en
Priority to KR1019960706045A priority patent/KR970703043A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3185Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
FR9405240A 1994-04-29 1994-04-29 Process for passivation of the sides of a thin-film semiconductor component. Expired - Fee Related FR2719416B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9405240A FR2719416B1 (en) 1994-04-29 1994-04-29 Process for passivation of the sides of a thin-film semiconductor component.
JP7528040A JPH09512667A (en) 1994-04-29 1995-05-02 Method of passivating side surface of thin film semiconductor component
PCT/FR1995/000572 WO1995030241A1 (en) 1994-04-29 1995-05-02 Method for passivating the sides of a thin film semiconductor component
EP95919467A EP0757845A1 (en) 1994-04-29 1995-05-02 Method for passivating the sides of a thin film semiconductor component
KR1019960706045A KR970703043A (en) 1994-04-29 1996-10-28 Method for passivating the sides of a thin film semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9405240A FR2719416B1 (en) 1994-04-29 1994-04-29 Process for passivation of the sides of a thin-film semiconductor component.

Publications (2)

Publication Number Publication Date
FR2719416A1 FR2719416A1 (en) 1995-11-03
FR2719416B1 true FR2719416B1 (en) 1996-07-05

Family

ID=9462685

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9405240A Expired - Fee Related FR2719416B1 (en) 1994-04-29 1994-04-29 Process for passivation of the sides of a thin-film semiconductor component.

Country Status (5)

Country Link
EP (1) EP0757845A1 (en)
JP (1) JPH09512667A (en)
KR (1) KR970703043A (en)
FR (1) FR2719416B1 (en)
WO (1) WO1995030241A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5752447B2 (en) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 Semiconductor device
JP5752446B2 (en) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 Semiconductor device
US8916425B2 (en) * 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8338240B2 (en) * 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP5687133B2 (en) * 2010-11-05 2015-03-18 三菱電機株式会社 Semiconductor device and display device
JP6006948B2 (en) * 2011-03-17 2016-10-12 株式会社半導体エネルギー研究所 Microcrystalline semiconductor film and method for manufacturing semiconductor device
JP2014038911A (en) * 2012-08-13 2014-02-27 Sony Corp Thin film transistor and manufacturing method of the same, and display device and electronic apparatus

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
FR2590409B1 (en) * 1985-11-15 1987-12-11 Commissariat Energie Atomique METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR WITH A SELF-ALIGNED GRID WITH RESPECT TO THE DRAIN AND THE SOURCE THEREOF AND TRANSISTOR OBTAINED BY THE PROCESS
JPS62252973A (en) * 1986-04-25 1987-11-04 Nec Corp Forward staggered type thin film transistor
JPS62291057A (en) * 1986-06-10 1987-12-17 Citizen Watch Co Ltd Formation of sos device
GB2238427A (en) * 1989-11-24 1991-05-29 Philips Electronic Associated Thin film diode devices and active matrix addressed display devices incorporating such
US5130263A (en) * 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
JPH04171767A (en) * 1990-11-02 1992-06-18 Sharp Corp Thin film transistor and manufacture thereof
DE69131570T2 (en) * 1990-11-16 2000-02-17 Seiko Epson Corp., Tokio/Tokyo Method of manufacturing a thin film semiconductor device
JPH04321236A (en) * 1991-04-19 1992-11-11 Sony Corp Manufacture of field-effect transistor
FR2675947A1 (en) * 1991-04-23 1992-10-30 France Telecom PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE.
US5252849A (en) * 1992-03-02 1993-10-12 Motorola, Inc. Transistor useful for further vertical integration and method of formation
JP3260165B2 (en) * 1992-07-30 2002-02-25 松下電器産業株式会社 Manufacturing method of thin film element
FR2702882B1 (en) * 1993-03-16 1995-07-28 Thomson Lcd Method for manufacturing direct step thin film transistors.

Also Published As

Publication number Publication date
WO1995030241A1 (en) 1995-11-09
KR970703043A (en) 1997-06-10
FR2719416A1 (en) 1995-11-03
JPH09512667A (en) 1997-12-16
EP0757845A1 (en) 1997-02-12

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Legal Events

Date Code Title Description
ST Notification of lapse